Search Results - "Rayit, Ashwain"

Doherty Power Amplifier for LTE-Advanced Systems by Abdulkhaleq, Ahmed M., Yahya, Maan A., Al-Yasir, Yasir I. A., Ojaroudi Parchin, Naser, McEwan, Neil, Rayit, Ashwain, Abd-Alhameed, Raed A., Noras, James

“…The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices…”
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Green and Highly Efficient MIMO Transceiver System for 5G Heterogenous Networks by Al-Yasir, Yasir I. A., Abdulkhaleq, Ahmed M., Parchin, Naser Ojaroudi, Elfergani, Issa T., Rodriguez, Jonathan, Noras, James M., Abd-Alhameed, Raed A., Rayit, Ashwain, Qahwaji, Rami

“…The paper presents the general requirements and an exemplary design of the RF front-end system that in today's handset is a key consumer of power. The design…”
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Path Loss Exponent Modeling for 6G Applications at 245 GHz by Obeidat, Huthaifa, Malik, Muhammad Ali, Trrad, Issam, Elfergani, Issa, Rayit, Ashwain, Obeidat, Omar, Abd-Alhameed, Raed

“…This research investigates the modeling of path loss exponent in an indoor environment at sub-Terahertz (THz) frequencies. The study examines directional and…”
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SECRET - Secure network coding for reduced energy next generation mobile small cells: A European Training Network in wireless communications and networking for 5G by Rodriguez, Jonathan, Radwan, Ayman, Barbosa, Claudia, Fitzek, Frank H. P., Abd-Alhameed, Raed A., Noras, J. M., Jones, Stephen M. R., Politis, Ilias, Galiotos, Panagiotis, Schulte, Gerrit, Rayit, Ashwain, Sousa, Maria, Alheiro, Rui, Gelabert, Xavier, Koudouridis, George P.

“…SECRET is a collaborative European Training Network (ETN) committed to create an excellent educational training platform for Early Stage Researchers (ESRs) in…”
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Load-Modulation Technique for Next Generation Mobile by Abdulkhaleq, Ahmed M., Yahya, Maan A., Brunning, Jack, Al-Yasir, Yasir, Parchin, Naser O., Rayit, Ashwain, Abd-Alhameed, Raed A., Noras, James

“…In this research, an asymmetrical load-modulation power amplifier is proposed and described. The designed amplifier uses two GaN HEMT transistors with 25W and…”
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