Search Results - "Raychaudhuri, Arup Kumar"
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Floating Back-Gate Field Effect Transistor Fabricated Using a Single Nanowire of Charge Transfer Complex as a Channel
Published in Journal of physical chemistry. C (18-01-2018)“…Metal–organic charge transfer complex (MOCT) material have good application potentials. We report a high carrier mobility in MOCT material…”
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Substrate wettability guided oriented self assembly of Janus particles
Published in Scientific reports (13-01-2021)“…Self-assembly of Janus particles with spatial inhomogeneous properties is of fundamental importance in diverse areas of sciences and has been extensively…”
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Plasticity-mediated collapse and recrystallization in hollow copper nanowires: a molecular dynamics simulation
Published in Beilstein journal of nanotechnology (2016)“…We study the thermal stability of hollow copper nanowires using molecular dynamics simulation. We find that the plasticity-mediated structural evolution leads…”
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Self-Powered Photodetector Fabricated from a Single-Charge-Transfer Complex Nanowire Grown In Situ between Prefabricated Electrodes on an Si3N4 Membrane
Published in ACS applied nano materials (14-07-2023)“…Power consumption in an electronic circuit is one of the serious challenges that need to be improved to achieve a durable future. A photodetector is one such…”
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Surface/Interface Defect Engineering on Charge Carrier Transport toward Broadband (UV-NIR) Photoresponse in the Heterostructure Array of p‑Si NWs/ZnO Photodetector
Published in ACS applied electronic materials (28-02-2023)“…The surface/interface properties, especially interfacial states, have a key impact on overall carrier generation, recombination/transport, and/or collection…”
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Gated Photodetector with a Bipolar Response from Single-Crystal Halide Perovskite Using a Polymeric Electrolyte as the Gate Dielectric
Published in ACS applied electronic materials (27-09-2022)“…In this report, we show that a gated optical detector working in the visible wavelength region can be made on single-crystal halide perovskite methylammonium…”
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Optically Induced Tunable Magnetization Dynamics in Nanoscale Co Antidot Lattices
Published in ACS nano (24-04-2012)“…We report the time-domain measurements of optically induced precessional dynamics in a series of Co antidot lattices with fixed antidot diameter of 100 nm and…”
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Effect of stabilizer on dynamic thermal transport property of ZnO nanofluid
Published in Nanoscale research letters (14-03-2013)“…In this paper, we investigate the effect of adding a stabilizer on the dynamic thermal properties of ZnO nanofluid (containing 5 to 10 nm diameter of ZnO…”
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Low-frequency flicker noise in a MSM device made with single Si nanowire (diameter ≈ 50 nm)
Published in Nanoscale research letters (10-04-2013)“…Low-frequency flicker noise has been measured in a metal-semiconductor-metal (MSM) device made from a single strand of a single crystalline Si nanowire…”
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Fabrication of Single Si Nanowire Metal-Semiconductor-Metal Device for Photodetection
Published in IEEE transactions on electron devices (01-05-2014)“…The photoresponse of a metal-semiconductor-metal (MSM) device using single silicon nanowire (Si NW) (~50-nm diameter) with responsivity approaching 3 A/W and…”
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Photoresponse of a Single Y‑Junction Carbon Nanotube
Published in ACS applied materials & interfaces (27-07-2016)“…We report investigation of optical response in a single strand of a branched carbon nanotube (CNT), a Y-junction CNT composed of multiwalled CNTs. The…”
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Effective separation of photogenerated electron-hole pairs by radial field facilitates ultrahigh photoresponse in single semiconductor nanowire photodetectors
Published 19-10-2020“…Journal of Physical Chemistry C 41, 2020, 22808 We report an investigation on the observation of ultrahigh photoresponse (photogain, G_Pc>106) in single…”
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Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands
Published in Nanoscale research letters (09-06-2011)“…The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by…”
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