Search Results - "Ravichandran, Arul"

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics by Lee, Jaebeom, Ravichandran, Arul V, Mohan, Jaidah, Cheng, Lanxia, Lucero, Antonio T, Zhu, Hui, Che, Zifan, Catalano, Massimo, Kim, Moon J, Wallace, Robert M, Venugopal, Archana, Choi, Woong, Colombo, Luigi, Kim, Jiyoung

“…Hexagonal boron nitride (h-BN) has been considered a promising dielectric for two-dimensional (2D) material-based electronics due to its atomically smooth and…”
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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source by Jung, Yong Chan, Hwang, Su Min, Le, Dan N., Kondusamy, Aswin L. N., Mohan, Jaidah, Kim, Sang Woo, Kim, Jin Hyun, Lucero, Antonio T., Ravichandran, Arul, Kim, Harrison Sejoon, Kim, Si Joon, Choi, Rino, Ahn, Jinho, Alvarez, Daniel, Spiegelman, Jeff, Kim, Jiyoung

“…Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using…”
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Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices by Cheng, Lanxia, Lee, Jaebeom, Zhu, Hui, Ravichandran, Arul Vigneswar, Wang, Qingxiao, Lucero, Antonio T, Kim, Moon J, Wallace, Robert M, Colombo, Luigi, Kim, Jiyoung

“…The successful realization of high-performance 2D-materials-based nanoelectronics requires integration of high-quality dielectric films as a gate insulator. In…”
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Ambipolar Gate Modulation Technique for the Reduction of Offset and Flicker Noise in Graphene Hall-Effect Sensors by Polley, Arup, Ravichandran, Arul Vigneswar, Kumar, Varun S., Venugopal, Archana, Cheng, Lanxia, Lucero, Antonio T., Kim, Jiyoung, Colombo, Luigi, Doering, Robert R.

“…There is a constant need for Hall-effect magnetic sensors with lower noise and lower offset for the high accuracy analog applications driven primarily by…”
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Ozone based high-temperature atomic layer deposition of SiO2 thin films by Hwang, Su Min, Qin, Zhiyang, Kim, Harrison Sejoon, Ravichandran, Arul, Jung, Yong Chan, Kim, Si Joon, Ahn, Jinho, Hwang, Byung Keun, Kim, Jiyoung

“…In this paper, atomic layer deposition of SiO2 thin films was investigated with Si2Cl6 and O3/O2 (400 g m−3). O3/O2 is not preferred for high-temperature (>400…”
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Robust SiN x /GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD by Meng, Xin, Lee, Jaebeom, Ravichandran, Arul, Byun, Young-Chul, Lee, Jae-Gil, Lucero, Antonio T., Kim, Si Joon, Ha, Min-Woo, Young, Chadwin D., Kim, Jiyoung

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Ozone based high-temperature atomic layer deposition of SiO 2 thin films by Hwang, Su Min, Qin, Zhiyang, Kim, Harrison Sejoon, Ravichandran, Arul, Jung, Yong Chan, Kim, Si Joon, Ahn, Jinho, Hwang, Byung Keun, Kim, Jiyoung

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Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD by Meng, Xin, Lee, Jaebeom, Ravichandran, Arul, Byun, Young-Chul, Lee, Jae-Gil, Lucero, Antonio T., Kim, Si Joon, Ha, Min-Woo, Young, Chadwin D., Kim, Jiyoung

“…In this letter, we report gallium nitride-based metal-insulator-semiconductor high-electron-mobility transistors (GaN MIS-HEMTs) with a 16-nm-thick silicon…”
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Evaluation and Integration of Graphene Field Effect Devices by Ravichandran, Arul Vigneswar

“…Graphene field effect devices have potential applications in emerging analogue and sensing technology. However, to use them in end applications, evaluation of…”
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Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS 2 for Two-Dimensional Material-Based Devices by Cheng, Lanxia, Lee, Jaebeom, Zhu, Hui, Ravichandran, Arul Vigneswar, Wang, Qingxiao, Lucero, Antonio T, Kim, Moon J, Wallace, Robert M, Colombo, Luigi, Kim, Jiyoung

“…The successful realization of high-performance 2D-materials-based nanoelectronics requires integration of high-quality dielectric films as a gate insulator. In…”
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Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiN x Films Using Trichlorodisilane for Etch-Resistant Coatings by Hwang, Su Min, Kim, Harrison Sejoon, Le, Dan N, Ravichandran, Arul Vigneswar, Sahota, Akshay, Lee, Jaebeom, Jung, Yong Chan, Kim, Si Joon, Ahn, Jinho, Hwang, Byung Keun, Lee, Lance, Zhou, Xiaobing, Kim, Jiyoung

“…In recent times, the requirements have become extremely stringent for employing silicon nitride (SiN x ) films in various types of applications. For instance,…”
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The Graphene Field Effect Transistor: A Large Scale Integration Approach by Ravichandran, Arul Vigneswar

“…Owing to the continuous down scaling of devices as per Moore’s law and the simultaneous need to increase the processing efficiency of the transistor, graphene…”
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