Search Results - "Raval, Mehul C."

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  1. 1

    Characterization of electroless nickel as a seed layer for silicon solar cell metallization by RAVAL, MEHUL C, SOLANKI, CHETAN S

    Published in Bulletin of materials science (01-02-2015)
    “…Electroless nickel plating is a suitable method for seed layer deposition in Ni–Cu-based solar cell metallization. Nickel silicide formation and hence contact…”
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    Journal Article
  2. 2

    Impact of Post-deposition Plasma Treatment on Surface Passivation Quality of Silicon Nitride Films by Saseendran, Sandeep S., Raval, Mehul C., Kottantharayil, Anil

    Published in IEEE journal of photovoltaics (01-01-2016)
    “…Exposing a plasma-enhanced chemical vapor deposition-deposited silicon nitride (SiNx) film to an inert gasoxidizing plasma ambient results in a significant…”
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    Journal Article
  3. 3

    Study of Nickel Silicide Formation and Associated Fill-Factor Loss Analysis for Silicon Solar Cells With Plated Ni-Cu Based Metallization by Raval, Mehul C., Joshi, Amruta P., Saseendran, Sandeep S., Suckow, Stephan, Saravanan, S., Solanki, Chetan S., Kottantharayil, Anil

    Published in IEEE journal of photovoltaics (01-11-2015)
    “…In this study, the impact of impurities incorporated into plated nickel seed layer on silicide formation and the influence of annealing temperature on the…”
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    Journal Article
  4. 4

    Novel PV module cleaning system using ambient moisture and self-cleaning coating by John, Jim Joseph, Raval, Mehul C., Kottantharayil, Anil, Solanki, Chetan Singh

    “…Soiling is a major concern for PV modules installed in field with power losses ranging from 15% to 65%. In current work, we propose an improved design for a PV…”
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    Conference Proceeding
  5. 5

    Analyzing impact of background plating from alkaline Ni bath for Ni-Cu metallization by Raval, Mehul C., Joshi, Amruta, Solanki, Chetan S.

    “…Ni-Cu based front contacts for c-Si cells are plated on patterned SiN x and there could be undesirable background plating leading to shading and shunting…”
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    Conference Proceeding
  6. 6

    Inductively Coupled Plasma Atomic Emission Spectroscopy: A bulk analysis and process monitoring technique for silicon solar cell fabrication by Joshi, Amruta P., Raval, Mehul C., Kottantharayil, Anil, Solanki, Chetan S.

    “…We report on the investigation of Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP AES), a trace element analysis technique, as a bulk impurity…”
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    Conference Proceeding
  7. 7

    N2O plasma treatment for minimization of background plating in silicon solar cells with Ni–Cu front side metallization by Raval, Mehul C., Saseendran, Sandeep S., Suckow, Stephan, Saravanan, S., Solanki, Chetan S., Kottantharayil, Anil

    Published in Solar energy materials and solar cells (01-01-2016)
    “…In this paper we demonstrate that an additional nitrous oxide (N2O) plasma treatment step after the regular SiNx:H anti-reflective coating (ARC) deposition…”
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    Journal Article