Search Results - "Ratushnyi, V. I."

Localization of Current Flow in Thermophotovoltaic Converters Based on InAsSbP/InAs Double Heterostructures by Matveev, B. A., Ratushnyi, V. I., Rybal’chenko, A. Yu

“…The electrical performance of thermophotovoltaic converters with a flip-chip design based on p -InAsSbP/ n -InAs/ n -InAsSbP double heterostructures with the…”
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Spatial Electroluminescence Distribution and Internal Quantum Efficiency in Substrate Free InAsSbP/InAsSb Double Heterostructure by Matveev, B. A., Ratushnyi, V. I., Rybal’chenko, A. Yu

“…In this work, we calculated the spatial distribution of the electroluminescence intensity taking into account the features of current spreading and taking into…”
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Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides by Matveev, B. A., Ratushnyi, V. I., Rybal’chenko, A. Yu

“…The basic characteristics of thermophotovoltaic heterostructure p -InAsSbP/ n -InAs converters have been simulated. The converters have been designed so that a…”
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Synthesis of zinc oxide films in glow discharge of various configurations by Zinchenko, S. P., Lyanguzov, N. V., Zakharchenko, I. N., Ratushnyi, V. I., Shirokov, V. B.

“…The structure of zinc oxide (ZnO) films deposited on silicon substrates using dc glow discharge in oxygen have been studied for two electrode…”
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Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes by Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

“…The I–V characteristics of front-surface-illuminated InAsSb(P) photodiodes are simulated in terms of a simple model that takes into account the radial…”
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Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C by Il’inskaya, N. D., Zakgeim, A. L., Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M., Chernyakov, A. E.

“…The current-voltage characteristics and temperature dependences of zero-bias dynamic resistance are analyzed for InAsSb photodiodes, with consideration for…”
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Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C by Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Shlenskii, A. A., Lunin, L. S., Ratushnyi, V. I., Koryuk, A. V., Tarakanova, N. G.

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Effect of the Crystallographic Orientation of GaAs Substrates on the Composition of Ga x In 1 – x P Layers by Kuznetsov, V. V., Lunin, L. S., Ratushnyi, V. I., Oliva, E. V., Shishkov, M. V.

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Phase equilibria of A 3 B 5 quinary systems with an elastically strained solid phase by Kuznetsov, V. V., Rubtsov, É. R., Ratushnyi, V. I., Kognovitskaya, E. A.

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Photoconverters based on GaAs/Ge heterostructures grown by low-temperature liquid phase epitaxy by Khvostikov, V. P., Lunin, L. S., Ratushnyi, V. I., Oliva, É. V., Shvarts, M. Z., Khvostikova, O. A.

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