Search Results - "Ratnam, P"
-
1
Detection of 16S rRNA gene for rapid identification of bacterial pathogens causing peritonitis in patients on continuous ambulatory peritoneal dialysis
Published in Indian journal of medical microbiology (01-07-2022)“…Peritonitis is the most important complication with high rate of morbidity and mortality in patients on continuous ambulatory peritoneal dialysis (CAPD)…”
Get full text
Journal Article -
2
Netarsudil monotherapy as the initial treatment for open-angle glaucoma and ocular hypertension in Indian patients: A real-world evaluation of efficacy and safety
Published in Indian journal of ophthalmology (01-06-2023)“…Purpose: Glaucoma is the second leading cause of blindness worldwide, affecting more than 64 million people aged 40-80. The best way to manage primary…”
Get full text
Journal Article -
3
Enterotoxigenicity screening of viable environmental Vibrio cholerae strains from rainwater pools in a university campus in Chennai, South India
Published in Scandinavian journal of infectious diseases (01-05-2011)“…Abstract Background: Vibrio spp., being primarily inhabitants of the aquatic environment, pose a severe health threat to humans. This problem is escalated in…”
Get full text
Journal Article -
4
A new approach to the modeling of nonuniformly doped short-channel MOSFET's
Published in IEEE transactions on electron devices (01-09-1984)“…A new doping transformation procedure for the modeling of arbitrarily doped enhancement-mode MOSFET's is presented. The procedure is based on conservation of…”
Get full text
Journal Article -
5
High voltage silicon-on-insulator (SOI) MOSFETs
Published in [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs (1991)“…Novel lateral high-voltage SOI MOSFETs capable of withstanding up to 400 V are presented. The design optimization, fabrication, and experimental results…”
Get full text
Conference Proceeding -
6
Accumulation-punchthrough mode of operation of buried-channel MOSFET's
Published in IEEE electron device letters (01-07-1982)“…The current-voltage characteristics of a buried-channel MOSFET operated in a "punchthrough-accumulation" mode, when the neutral implanted channel is completely…”
Get full text
Journal Article -
7
Membrane-protein interaction and the molten globule state: interaction of alpha-lactalbumin with membranes
Published in Journal of protein chemistry (01-10-1995)“…The insertion of soluble proteins into membranes has been a topic of considerable interest. We have studied the insertion of bovine alpha-lactalbumin into…”
Get more information
Journal Article -
8
On-line extraction of model parameters of a long buried-channel MOSFET
Published in IEEE transactions on electron devices (01-03-1985)“…A buried-channel depletion MOS transistor has an implanted neutral conducting channel between the source and drain due to which the device works in a variety…”
Get full text
Journal Article -
9
Conditional probabilities of wet and dry months at Dharwad
Published in Journal of agrometeorology (01-06-2005)Get full text
Journal Article -
10
Comparative sensitivity of two techniques of specimen inoculation for the isolation of viruses
Published in Indian journal of medical research (New Delhi, India : 1994) (01-10-1969)Get more information
Journal Article -
11
The effect of isolation edge profile on the leakage and breakdown characteristics of advanced bipolar transistors
Published in Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting (1992)“…The authors describe the effect of the isolation edge profile on the leakage and breakdown characteristics of advanced poly emitter NPN bipolar transistors. It…”
Get full text
Conference Proceeding -
12
The Case of General Yamashita
Published in Pacific Affairs (01-09-1951)Get full text
Book Review Journal Article -
13
Modeling on increase of n-p-n and p-n-p current gain by hydrogen electromigration in polysilicon emitters
Published in Proceedings of IEEE International Electron Devices Meeting (1993)“…A unified analytical model that relates the increase of current gain to forward current stress is presented for both poly emitter n-p-n and p-n-p transistors…”
Get full text
Conference Proceeding -
14
Modeling arsenic redistribution during titanium silicide formation
Published in Technical Digest., International Electron Devices Meeting (1988)“…A novel double-moving-boundary approach to modeling arsenic redistribution during titanium silicide formation over shallow junctions is presented. Arsenic…”
Get full text
Conference Proceeding