Search Results - "Rassekh, Amin"

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect by Rassekh, Amin, Sallese, Jean-Michel, Jazaeri, Farzan, Fathipour, Morteza, Ionescu, Adrian M.

“…In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is…”
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Tunneling Current Through a Double Quantum Dots System by Rassekh, Amin, Shalchian, Majid, Sallese, Jean-Michel, Jazaeri, Farzan

“…Electrostatically confined quantum dots in semiconductors hold the promise to achieve high scalability and reliability levels for practical implementation of…”
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A single-gate SOI nanosheet junctionless transistor at 10-nm gate length: design guidelines and comparison with the conventional SOI FinFET by Rassekh, Amin, Fathipour, Morteza

“…We present a detailed study on the n -channel single-gate junctionless transistor (JLT) at the 10 - nm node. We investigate the influence of its structural…”
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Communication at the Speed of Light (CaSoL): A New Paradigm for Designing Global Wires by Sarvari, Reza, Rassekh, Amin, Shahhosseini, Sina

“…In this paper, we argue that communication at the speed of light (CaSoL) through on-chip copper interconnects is possible in the near future based on…”
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Nonhysteretic Condition in Negative Capacitance Junctionless FETs by Rassekh, Amin, Jazaeri, Farzan, Sallese, Jean-Michel

“…This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical…”
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Design space of quantum dot spin qubits by Rassekh, Amin, Shalchian, Majid, Sallese, Jean-Michel, Jazaeri, Farzan

“…Solid-state qubits can be implemented with electrostatically confined quantum dots in semiconductors, allowing gate voltages to independently control the…”
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Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects by Rassekh, Amin, Jazaeri, Farzan, Fathipour, Morteza, Sallese, Jean-Michel

“…In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed…”
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Design Space of Negative Capacitance in FETs by Rassekh, Amin, Jazaeri, Farzan, Sallese, Jean-Michel

“…Relying on the previously developed charge-based approaches, this paper presents a physics-based design space of negative capacitance in double-gate and bulk…”
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An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction by Kamaei, Sadegh, Saeidi, Ali, Jazaeri, Farzan, Rassekh, Amin, Oliva, Nicolo, Cavalieri, Matteo, Lambert, Benjamin, Ionescu, Adrian Mihai

“…This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap…”
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Simplified EPFL HEMT Model by Jazaeri, Farzan, Shalchian, Majid, Yesayan, Ashkhen, Rassekh, Amin, Mangla, Anurag, Parvais, Bertrand, Sallese, Jean-Michel

“…This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current…”
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An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe 2 Hetero-Junction by Kamaei, Sadegh, Saeidi, Ali, Jazaeri, Farzan, Rassekh, Amin, Oliva, Nicolo, Cavalieri, Matteo, Lambert, Benjamin, Ionescu, Adrian Mihai

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Simplified EPFL GaN HEMT Model by Jazaeri, Farzan, Shalchian, Majid, Yesayan, Ashkhen, Rassekh, Amin, Mangla, Anurag, Parvais, Bertrand, Sallese, Jean-Michel

“…This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current…”
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Non-Hysteretic Condition in Negative Capacitance Junctionless FETs by Rassekh, Amin, Jazaeri, Farzan, Sallese, Jean-Michel

“…This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a…”
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GaN-on-Porous Silicon for RF Applications by Scheen, Gilles, Tuyaerts, Romain, Cardinael, Pieter, Ekoga, Enrique, Aouadi, Khaled, Pavageau, Christophe, Rassekh, Amin, Nabet, Massinissa, Yadav, Sachin, Raskin, Jean-Pierre, Parvais, Bertrand, Emam, Mostafa

“…Gallium nitride (GaN) is a promising semiconductor for RF and high-power applications. However, its large-scale industrialization is hindered by several…”
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Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect by Rassekh, Amin, Sallese, Jean-Michel, Jazaeri, Farzan, Fathipour, Morteza, Ionescu, Adrian M

“…In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed…”
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Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects by Rassekh, Amin, Jazaeri, Farzan, Fathipour, Morteza, Sallese, Jean-Michel

“…In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a…”
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