Search Results - "Rasidah, S."

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  1. 1

    The design of ground shield spiral inductor using 0.13 μm CMOS technology for millimeter-wave radio over fiber applications by Rasidah, S., Siti Maisurah, M. H., Nazif, E. F., Norhapizin, K., Rahim, A. I. A.

    “…High quality factor, Q of inductor operates at high frequency and baseband is reported in this paper. These inductors are design for mm-wave RoF application…”
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    Conference Proceeding
  2. 2

    3-stage 15 GHz p-HEMT power amplifier design for MMIC applications by Rasidah, S, Rasmi, A, Siti Maisurah, M H, Rahim, A I A, Yahya, M R

    “…This paper present the design of 3-stage 15 GHz power amplifier (PA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each…”
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    Conference Proceeding
  3. 3

    15 GHz medium power amplifier design based On 0.15 μm p-HEMT GaAs technology for wideband applications by Rasidah, S., Samsuri, N. M., Kushairi, Norhapizin, Ngah, N. A.

    “…This paper presents a thorough design of 15 GHz Ku-Band medium Power Amplifier (MPA). The technology used for this design is 0.15 μm GaAs p-HEMT technology…”
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    Conference Proceeding
  4. 4

    15 GHz medium power amplifier design for Ku-band applications by Rasidah, S., Rasmi, A., Maisurah, M. H. S., Rahim, A. I. A., Yahya, M. R.

    “…This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each…”
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    Conference Proceeding
  5. 5

    A 0.18μm CMOS T/R switch for 900MHz wireless application by Siti Maisurah, M.H., Mohd Azmi, I., Rasidah, S., Abdul Rahim, A.I., Mohamed Razman, Y.

    “…A single-pole double-throw (SPDT) transmit/receive (T/R) switch for 900 MHz applications has been designed in a 0.18 mum CMOS process. The switch exhibit a 16…”
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    Conference Proceeding
  6. 6

    Effect of Indium Content in the Channel on the Electrical Performance of Metamorphic High Electron Mobility Transistors by Idham M, N.F., Ahmad Ismat, A.I., Rasidah, S., Asban, D., Razman Y, M., Abdul Fatah, A.M.

    “…Metamorphic InAlAs/InGaAs high electron mobility transistors (HEMT) has demonstrated several advantages over pseudomorphic-HEMT on GaAs and lattice…”
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    Conference Proceeding
  7. 7

    New evidence of Lockup Provisions: Effects on IPO Demands by Mohd-Rashid, Rasidah, Khaw, Karren Lee-Hwei, Mehmood, Waqas, Tajuddin, Ahmad Hakimi

    “…This study examines the impacts of a mandatory lockup ratio and lockup period, together with voluntary lockup, on the initial public offering (IPO)…”
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    Journal Article
  8. 8

    The Reaction of the Malaysian Stock Market to the COVID-19 Pandemic by Mehmood, Waqas, Mohd-Rashid, Rasidah, Aman-Ullah, Attia, Shafique, Owais, Tajuddin, Ahmad Hakimi

    “…The present study was conducted to understand the turmoil effects of COVID-19 pandemic on the Malaysian stock market during the different periods of the…”
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    Journal Article