Search Results - "Rasidah, S."
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The design of ground shield spiral inductor using 0.13 μm CMOS technology for millimeter-wave radio over fiber applications
Published in 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) (01-08-2015)“…High quality factor, Q of inductor operates at high frequency and baseband is reported in this paper. These inductors are design for mm-wave RoF application…”
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Conference Proceeding -
2
3-stage 15 GHz p-HEMT power amplifier design for MMIC applications
Published in 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) (01-12-2010)“…This paper present the design of 3-stage 15 GHz power amplifier (PA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each…”
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Conference Proceeding -
3
15 GHz medium power amplifier design based On 0.15 μm p-HEMT GaAs technology for wideband applications
Published in RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics (01-09-2013)“…This paper presents a thorough design of 15 GHz Ku-Band medium Power Amplifier (MPA). The technology used for this design is 0.15 μm GaAs p-HEMT technology…”
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Conference Proceeding -
4
15 GHz medium power amplifier design for Ku-band applications
Published in 2011 IEEE Regional Symposium on Micro and Nano Electronics (01-09-2011)“…This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each…”
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Conference Proceeding -
5
A 0.18μm CMOS T/R switch for 900MHz wireless application
Published in 2008 IEEE International RF and Microwave Conference (01-12-2008)“…A single-pole double-throw (SPDT) transmit/receive (T/R) switch for 900 MHz applications has been designed in a 0.18 mum CMOS process. The switch exhibit a 16…”
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Conference Proceeding -
6
Effect of Indium Content in the Channel on the Electrical Performance of Metamorphic High Electron Mobility Transistors
Published in 2006 IEEE International Conference on Semiconductor Electronics (01-11-2006)“…Metamorphic InAlAs/InGaAs high electron mobility transistors (HEMT) has demonstrated several advantages over pseudomorphic-HEMT on GaAs and lattice…”
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Conference Proceeding -
7
New evidence of Lockup Provisions: Effects on IPO Demands
Published in Journal of contemporary Eastern Asia (2022)“…This study examines the impacts of a mandatory lockup ratio and lockup period, together with voluntary lockup, on the initial public offering (IPO)…”
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Journal Article -
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The Reaction of the Malaysian Stock Market to the COVID-19 Pandemic
Published in Journal of contemporary Eastern Asia (2021)“…The present study was conducted to understand the turmoil effects of COVID-19 pandemic on the Malaysian stock market during the different periods of the…”
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Journal Article