Search Results - "Rarenko, I. M."
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Hg3In2Te6-based photodiodes for fiber optic communication
Published in Physica status solidi. A, Applications and materials science (01-02-2009)“…Schottky barrier photodiodes obtained by vacuum evaporation of the semi‐transparent film over the surface of single crystalline Hg3In2Te6 substrates…”
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2
Investigations of transport phenomena in HgMnTe and HgCdMnTe monocrystals
Published in Journal of alloys and compounds (26-05-2004)“…This paper presents theoretical and experimental investigations of narrow-gap HgMnTe and HgCdMnTe semiconductors. It has been shown that the comparison of…”
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Journal Article Conference Proceeding -
3
HgCdMnZnTe: new material for IR photoelectronics
Published in Journal of alloys and compounds (26-05-2004)“…This paper presents theoretical investigations of basic electrophysical parameters of a new five-component semiconductor solid solution HgCdMnZnTe. It has been…”
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Journal Article Conference Proceeding -
4
HgCdMnZnTe: Growth and physical properties
Published in Journal of alloys and compounds (26-10-2006)“…The results of studying the most important physical properties of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the…”
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Journal Article Conference Proceeding -
5
Magnetophonon resonance in MnxCdyHg1−x−yTe and ZnxCdyHg1−x−yTe
Published in Journal of alloys and compounds (26-05-2004)“…Magnetophonon resonance (MPR) was studied in Mn0.095Cd0.09Hg0.815Te and Mn0.04Cd0.09Hg0.77Te quaternary solid solution. The fundamental line of MPR is observed…”
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Journal Article Conference Proceeding -
6
Charge transport mechanisms in HgMnTe photodiodes with ion etched p–n junctions
Published in Solid-state electronics (01-07-2000)“…Infrared detectors with p–n junctions formed by ion etching of p-Hg 1− x Mn x Te ( x≈0.1) single crystals are reported. The diode structures exhibit…”
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7
Electronic transport properties of HgMnTe n +–p junctions
Published in Infrared physics & technology (01-02-2003)“…Transport properties of Hg 1 x Mn x Te photodiodes for 8–14 μm spectral region are investigated. It is shown that the distributions of space charge density,…”
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8
Determining MnxCdyHg1-x-yTe and ZnxCdyHg1-x-yTe material parameters by magnetophonon spectroscopy
Published in Physica status solidi. A, Applied research (2003)“…Magnetophonon resonance was found to manifest itself in Mn0.095Cd0.089Hg0.816Te four-component solid solution. The main maximum is located at a magnetic field…”
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9
Chemical etching of CdSb single crystals: Thermodynamic analysis
Published in Inorganic materials (01-12-2003)Get full text
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10
Chemical etching of Cd1 − x Mn x Te solid solution single crystals with iodine solutions in methanol
Published in Russian journal of inorganic chemistry (01-06-2009)“…Chemical etching of Cd1 - x Mn x Te (0.04 < x < 0.5) solid solution (ss) single crystals in b + CH3OH etching mixtures was studied. Concentration and kinetic…”
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11
A photoelectric study of charge-carrier collection in CdZnTe-based detectors of x-ray and γ radiation
Published in Semiconductors (Woodbury, N.Y.) (01-08-2004)Get full text
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12
Electrical properties of surface-barrier diodes based on CdZnTe
Published in Semiconductors (Woodbury, N.Y.) (01-02-2003)Get full text
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13
Anodic fluoride on HgMnTe
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-1997)“…The formation of anodic fluoride on HgMnTe has been studied and the composition of the interface and the chemical depth profiles have been characterized by…”
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14
Generation-recombination and diffusion currents in HgMnTe n +-p junctions
Published in Semiconductors (Woodbury, N.Y.) (01-11-2001)Get full text
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15
Electrical properties of narrow-gap HgMnTe Schottky diodes
Published in Semiconductors (Woodbury, N.Y.) (01-10-2002)Get full text
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16
Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe
Published in Semiconductors (Woodbury, N.Y.) (01-01-2000)Get full text
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17
Semiconductor solid solutions Hg1-xMnxTe -based Schottky diodes for the mid infrared radiation
Published in Melecon 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference (01-04-2010)“…The electric and photoelectric parameters of the semiconductor solid solutions Hg 1-x Mn x Te-based Shottky diodes are presented in this paper. It is showing…”
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Conference Proceeding -
18
Hg 3 In 2 Te 6 ‐based photodiodes for fiber optic communication
Published in Physica status solidi. A, Applications and materials science (01-02-2009)“…Schottky barrier photodiodes obtained by vacuum evaporation of the semi‐transparent film over the surface of single crystalline Hg 3 In 2 Te 6 substrates…”
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19
Two-and three-dimensional conduction channels at block boundaries in (CdHg)Te mosaic crystals
Published in Semiconductors (Woodbury, N.Y.) (01-03-1998)Get full text
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20
Charge transport mechanisms in Schottky diodes based on low-resistance CdTe:Mn
Published in Semiconductors (Woodbury, N.Y.) (01-07-2013)“…CdTe:Mn crystals with a resistivity of ∼1 Ω cm at 300 K and Schottky diodes based on them are investigated. The electrical conductivity of the material and its…”
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