Search Results - "Rao, K.S.R.K."

Low temperature photoluminescence properties of Zn-doped GaAs by Hudait, M.K., Modak, P., Rao, K.S.R.K., Krupanidhi, S.B.

“…Dimethylzinc (DMZn) was used as a p-type dopant in GaAs grown by low pressure metalorganic chemical vapor deposition (MOCVD). The influence of growth…”
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Solvothermal synthesis of Hg 1− x Cd x Te nanostructures—Their structural and optical properties by Khatei, Jayakrishna, Pendyala, Naresh Babu, Rao, K.S.R.K.

“…►Synthesis of HgCdTe nanostructures by low-cost solvothermal method. ► Use of air stable Na 2TeO 3 as Te precursor for synthesis of HgCdTe. ► Synthesis is done…”
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Compositional trends in low-temperature photoluminescence of heavily Er-doped GeS 2–Ga 2S 3 glasses by Ivanova, Z.G., Zavadil, J., Rao, K.S.R.K.

“…The influence of temperature and glass composition on the photoluminescence (PL) efficiency of Er 3+ ions embedded in (GeS 2) 100−x(Ga 2S 3) x (x = 20, 25 and…”
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Solvothermal synthesis of Hg1-xCdxTe nanostructures-Their structural and optical properties by KHATEI, Jayakrishna, NARESH BABU PENDYALA, RAO, K. S. R. K

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Coexistence of para and ferromagnetic phases of Fe 3 + in undoped CdZnTe ( Zn ∼ 4 % ) crystals by Kulkarni, Gururaj Anand, Murthy, Oruganty V.S.N., Rao, K.S.R.K., Bhat, S.V., Chakraborty, B.R.

“…The signatures of the coexistence of para and ferromagnetic phases for the Fe 3+ charge state of iron have been identified in the low temperature electron spin…”
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Compositional trends in low-temperature photoluminescence of heavily Er-doped GeS2-Ga2S3 glasses by IVANOVA, Z. G, ZAVADIL, J, RAO, K. S. R. K

“…The influence of temperature and glass composition on the photoluminescence (PL) efficiency of Er3+ ions embedded in (GeS2)100-x(Ga2S3)x (x=20, 25 and 33mol%)…”
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Coexistence of para and ferromagnetic phases of in undoped CdZnTe () crystals by Kulkarni, Gururaj Anand, Murthy, Oruganty V.S.N., Rao, K.S.R.K., Bhat, S.V., Chakraborty, B.R.

“…The signatures of the coexistence of para and ferromagnetic phases for the Fe super(3+) charge state of iron have been identified in the low temperature…”
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Electroluminescence from modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells by Naik, K. Gopalakrishna, Rao, K.S.R.K.

“…Low-temperature electroluminescence (EL) is observed in n-type modulation-doped AlGaAs/InGaAs/GaAs quantum well samples by applying a positive voltage between…”
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Low-temperature Er3+ emission in Ge–S–Ga glasses excited by host absorption by Ivanova, Z.G., Aneva, Z., Ganesan, R., Tonchev, D., Gopal, E.S.R., Rao, K.S.R.K., Allen, T.W., DeCorby, R.G., Kasap, S.O.

“…The photoluminescence (PL) of a series of (GeS2)80(Ga2S3)20 glasses doped with different amounts of Er (0.17, 0.35, 0.52, 1.05 and 1.39 at.%) at 77 and 4.2K…”
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A Fourier-transform photoluminescence study of radiative recombination mechanism in chalcogenide glasses by Asha Bhat, N, Sangunni, K.S, Rao, K.S.R.K

“…In this paper, we report photoluminescence (PL) studies carried out using Fourier-transform method in glassy Se (a-Se) and Ge-based Ge 20Se 80 and Ge 20Se 70Te…”
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Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study by Naik, K. Gopalakrishna, Rao, K.S.R.K., Srinivasan, T., Muralidharan, R., Mehta, S.K.

“…The effect of hydrogen on donors and interface defects in silicon modulation doped Al x Ga 1− x As/In y Ga 1− y As/GaAs heterostructures has been investigated…”
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Photoluminescence study of biexciton luminescence on the naturally occurring quantum dots in undoped InGaAs/GaAs quantum wells by Naik, K. Gopalakrishna, Rao, K.S.R.K., Srinivasan, T., Muralidharan, R., Mehta, S.K.

“…We report on a photoluminescence study of excitons and biexcitons localized at naturally occurring quantum dots formed due to monolayer well width fluctuations…”
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Low threshold ovonic switching in [formula omitted] heterostructures by Venkataraghavan, R., Rao, K.S.R.K., Bhat, H.L., Pal, S., Dubey, G.C.

“…a- Si : H InSb structures have been fabricated by glow discharge deposition of a-Si on bulk InSb substrates in hydrogen atmosphere. The structure shows…”
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The effect of temperature gradient and ampoule velocity on the composition and other properties of Bridgman-grown indium antimonide by Venkataraghavan, R., Rao, K.S.R.K., Bhat, H.L.

“…A systematic study of the role of the melt–solid interface position in determining the crystal quality of Bridgman-grown indium antimonide ingots is made. The…”
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Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates by Hudait, M.K., Modak, P., Hardikar, S., Rao, K.S.R.K., Krupanidhi, S.B.

“…Comparative studies of silicon (Si) incorporation in GaAs on both polar GaAs and nonpolar Ge substrates by low temperature photoluminescence (LTPL)…”
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Electron spin resonance study on high energy heavy ion irradiated conducting carbon films by Bhattacharyya, Somnath, Rastogi, A, Bhat, S.V, Rao, K.S.R.K, Subramanyam, S.V, Kanjilal, D

“…Amorphous conducting carbon films are prepared by plasma assisted chemical vapour deposition. These films are irradiated by high energy (170 MeV) heavy ion (…”
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Influence of Growth Parameters on the Surface and Interface Quality of Laser Deposited InSb/CdTe Heterostructures by Venkataraghavan, R., Rao, K.S.R.K., Hegde, M. S., Bhat, H. L.

“…The pulsed laser deposition technique has been employed for the growth of single crystalline oriented films of indium antimonide on bulk cadmium telluride…”
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