Search Results - "Ranev, V. Z."

Wide-band balanced active HEMT mixer by Yanev, A.S., Todorov, B.N., Ranev, V.Z.

“…The design and characteristics of a balanced active high electron-mobility transistor (HEMT) mixer operating in the 4.5-10-GHz frequency band are described in…”
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A wideband uniplanar 180-degree hybrid ring coupler by Yanev, A. S., Todorov, B. N., Ranev, V. Z.

“…A wideband uniplanar 180-degree hybrid ring coupler implemented in coplanar and slot transmission lines is described. An equivalent circuit of the device is…”
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A broad-band balanced HEMT frequency doubler in uniplanar technology by Yanev, A.S., Todorov, B.N., Ranev, V.Z.

“…Design and performance of a simple balanced high electron-mobility transistor doubler in uniplanar technology are described. The uniplanar in-phase and…”
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A multioctave (0.5–12.0 GHz) low-noise transistor amplifier by Yanev, A., Ranev, V. Z., Zubov, P.

“…An effective method of computer calculation and optimization of characteristics of multioctave low-noise transistor amplifiers is presented. The method was…”
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