Search Results - "Ramm, P."

A cross-sectional study to validate an administrative back pain severity classification tool based on the graded chronic pain scale by Hochheim, M., Ramm, P., Wunderlich, M., Amelung, V.

“…Treatment of chronic lower back pain (CLBP) should be stratified for best medical and economic outcome. To improve the targeting of potential participants for…”
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Association between chronic low back pain and regular exercise, sedentary behaviour and mental health before and during COVID-19 pandemic: insights from a large-scale cross-sectional study in Germany by Hochheim, M, Ramm, P, Wunderlich, M, Amelung, V

“…Background Nonspecific chronic low back pain (CLBP) is a complex symptom with numerous possible causes and influencing factors. Understanding how modifiable…”
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Cost-effectiveness analysis of a chronic back pain multidisciplinary biopsychosocial rehabilitation (MBR) compared to standard care for privately insured in Germany by Hochheim, M, Ramm, P, Wunderlich, M, Amelung, V

“…Multidisciplinary biopsychosocial rehabilitation (MBR) is highly recommended for chronic lower back pain (CLBP) treatment, but its economic benefit remains to…”
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3D-integration of silicon devices: A key technology for sophisticated products by Klumpp, A, Ramm, P, Wieland, R

“…3D integration is a key solution to the predicted performance increase of future electronic systems. It offers extreme miniaturization and fabrication of More…”
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Antiferromagnetic-ferromagnetic phase transition in FeRh probed by x-ray magnetic circular dichroism by Stamm, C., Thiele, J.-U., Kachel, T., Radu, I., Ramm, P., Kosuth, M., Minár, J., Ebert, H., Dürr, H. A., Eberhardt, W., Back, C. H.

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High quality strained Si/SiGe substrates for CMOS and optical devices by Weber, J., Nebrich, L., Bensch, F., Neumeier, K., Vogg, G., Wieland, R., Bonfert, D., Ramm, P.

“…Using LPCVD epitaxy on 200 mm standard wafers high quality strained Si/SiGe substrates (sSi/SiGe) based on a graded buffer approach have been developed…”
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Three dimensional metallization for vertically integrated circuits by Ramm, P., Bollmann, D., Braun, R., Buchner, R., Cao-Minh, U., Engelhardt, M., Errmann, G., Graßl, T., Hieber, K., Hübner, H., Kawala, G., Kleiner, M., Klumpp, A., Kühn, S., Landesberger, C., Lezec, H., Muth, W., Pamler, W., Popp, R., Renner, E., Ruhl, G., Sänger, A., Scheler, U., Schertel, A., Schmidt, C., Schwarzl, S., Weber, J., Weber, W.

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Through silicon via technology - processes and reliability for wafer-level 3D system integration by Ramm, P., Wolf, M.J., Klumpp, A., Wieland, R., Wunderle, B., Michel, B., Reichl, H.

“…3D integration is a rapidly growing topic in the semiconductor industry that encompasses different types of technologies. The paper addresses one of the most…”
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Titanium nitride films for barrier applications produced by rapid thermal CVD and subsequent in-situ annealing by Leutenecker, R., Fröschle, B., Cao-Minh, U., Ramm, P.

“…TIN films with a thickness of typically 50 nm were deposited by rapid thermal chemical vapour deposition (RTCVD) using a TiCl 4 NH 3 process. The deposition…”
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Process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single-SiGe substrate by Nebrich, L., Neumeier, K., Stadler, A., Weber, J., Bensch, F., Kreuzer, S., Vogg, G., Herrmann, K., Klumpp, A., Wieland, R., Bonfert, D., Soldner, W., Ramm, P.

“…The process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single 200 mm SiGe substrate is reported in this paper. Si 0.76Ge 0.24…”
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Titanium monophosphide (TiP) layers as potential diffusion barriers by Leutenecker, R., Fröschle, B., Ramm, P.

“…By annealing titanium nitride (TiN) layers in phosphine (PH 3) at 450°C, top layers of pure titanium monophosphide (TiP) could be deposited. The phase TiP and…”
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Technologies for 3D wafer level heterogeneous integration by Wolf, M.J., Ramm, P., Klumpp, A., Reichl, H.

“…3D integration is a fast growing field that encompasses different types of technologies. The paper addresses one of the most promising technology which uses…”
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Laser-induced generation and quenching of magnetization on FeRh studied with time-resolved x-ray magnetic circular dichroism by Radu, I., Stamm, C., Pontius, N., Kachel, T., Ramm, P., Thiele, J.-U., Dürr, H. A., Back, C. H.

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Image-based screening: a technology in transition by Ramm, Peter

“…Image-based screening (IBS) has proven itself with whole-well assays in which throughput and assay miniaturization are priorities. Recent interest, however,…”
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Deposition of titanium nitride/tungsten layers for application in vertically integrated circuits technology by Ruhl, G., Fröschle, B., Ramm, P., Intemann, A., Pamler, W.

“…Chemical vapor deposition (CVD) processes were developed meeting the stringent requirements for the metallization of inter-chip-vias (ICV) in the vertical…”
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Determination of residual stress with high spatial resolution at TSVs for 3D integration: Comparison between HR-XRD, Raman spectroscopy and fibDAC by Vogel, D., Zschenderlein, U., Auerswald, E., Holck, O., Ramm, P., Wunderle, B., Pufall, R.

“…Three different experimental methods have been used to determine mechanical stresses in silicon nearby tungsten TSVs - HR-XRD performed at a synchrotron…”
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Imaging systems in assay screening by Ramm, Peter

“…High-throughput screening laboratories continuously seek higher throughput, lower cost and compound conservation. In an attempt to approach these goals,…”
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Regional metabolic activity in the rat brain during sleep-wake activity by Ramm, P, Frost, B J

“…[14C]2-Deoxyglucose autoradiography was used to demonstrate regional metabolic activity in the rat brain during wake, slow-wave sleep (SWS), and REM sleep…”
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Effects of extinction, pimozide, SCH 23390, and metoclopramide on food-rewarded operant responding of rats by BENINGER, R. J, CHENG, M, HAHN, B. L, HOFFMAN, D. C, MAZURSKI, E. J, MORENCY, M. A, RAMM, P, STEWART, R. J

“…The similarity in the pattern of responding produced by extinction and dopamine (DA) receptor blockers has led to the suggestion that DA neurons may…”
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InterChip via technology for vertical system integration by Ramm, P., Bonfert, D., Gieser, H., Haufe, J., Iberl, F., Klumpp, A., Kux, A., Wieland, R.

“…Vertical System Integration VSI(R) means the realization of three-dimensional integrated systems by thinning, stacking and vertical interchip wiring of…”
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