High power blue LED development using different growth modes

High power blue LED development using different growth modes

Blue high brightness light emitting diodes (HB‐LEDs) have been developed using different growth modes in the active layers. Piezoelectric field engineering improves the optical output power in multiple quantum well (MQW) LEDs by inserting an optimized transitional superlattice (TSL) before the activ...

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Bibliographic Details
Published in:Physica status solidi. A, Applied research Vol. 201; no. 12; pp. 2644 - 2648
Main Authors: Lee, Dong S., Florescu, Doru I., Lu, Dong, Ramer, Jeff C., Merai, Vinod, Parekh, Aniruddh, Begarney, Michael J., Armour, Eric A.
Format: Journal Article Conference Proceeding
Language:English
Published: Berlin WILEY-VCH Verlag 01-09-2004
WILEY‐VCH Verlag
Wiley-VCH
Subjects:
68.37.Hk
68.37.Ps
73.21.Fg
78.55.Cr
78.60.Fi
81.15.Gh
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Quantum dots
Quantum wells
Superlattices
Growth mechanism
Active layer
Multiple quantum well
Light emitting diodes
Indium
Localization
Quantum yield
Optimization
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Summary:Blue high brightness light emitting diodes (HB‐LEDs) have been developed using different growth modes in the active layers. Piezoelectric field engineering improves the optical output power in multiple quantum well (MQW) LEDs by inserting an optimized transitional superlattice (TSL) before the active MQW layers. Within single quantum well (SQW) LEDs, quasi‐Quantum Dot (QD) growth for Indium localization has been realized. The SQW LED output power exceeds the strain engineered MQW LEDs. The experimental data indicates that Indium localization enhances overall quantum efficiency and results in increased output power for HB‐LEDs. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:istex:AA646654C5B0A3354380D4766A6F9F0B2127F2CC
ArticleID:PSSA200404995
ark:/67375/WNG-LL1Q2LXS-5
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.200404995