Search Results - "Ramdane, A"
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Circulating Tumor Cell Enrichment Based on Physical Properties
Published in Journal of Laboratory Automation (01-12-2013)“…The metastatic dissemination and spread of malignant circulating tumor cells (CTCs) accounts for more than 90% of cancer-related deaths. CTCs detach from a…”
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2
Flexible micro spring array device for high-throughput enrichment of viable circulating tumor cells
Published in Clinical chemistry (Baltimore, Md.) (01-02-2014)“…The dissemination of circulating tumor cells (CTCs) that cause metastases in distant organs accounts for the majority of cancer-related deaths. CTCs have been…”
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3
Noise-induced broadening of a quantum-dash laser optical frequency comb
Published in Applied physics letters (24-07-2023)“…Single-section quantum dash semiconductor lasers have attracted much attention as an integrated and simple platform for the generation of THz-wide and flat…”
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4
Nucleus of Circulating Tumor Cell Determines Its Translocation Through Biomimetic Microconstrictions and Its Physical Enrichment by Microfiltration
Published in Small (Weinheim an der Bergstrasse, Germany) (01-11-2018)“…The mechanism of cells passing through microconstrictions, such as capillaries and endothelial junctions, influences metastasis of circulating tumor cells…”
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5
Separable Bilayer Microfiltration Device for Viable Label-free Enrichment of Circulating Tumour Cells
Published in Scientific reports (09-12-2014)“…The analysis of circulating tumour cells (CTCs) in cancer patients could provide important information for therapeutic management. Enrichment of viable CTCs…”
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6
Quantum dash frequency comb laser stabilisation by optical self‐injection provided by an all‐fibre based delay‐controlled passive external cavity
Published in Electronics letters (05-09-2019)“…The intermode beat frequency stability of a 1 mm long quantum dash self mode‐locked semiconductor laser emitting optical frequency combs centred at 1535 nm is…”
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7
Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μ m
Published in Applied physics letters (14-09-2015)“…We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick…”
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8
Terahertz Time-Domain Spectroscopy System Driven by a Monolithic Semiconductor Laser
Published in Journal of infrared, millimeter and terahertz waves (01-08-2017)“…A fiber coupled terahertz time-domain spectroscopy (THz TDS) system which is driven by a pulsed monolithic semiconductor laser is presented. A bandwidth of…”
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9
Optical pulse generation in single section InAs/GaAs quantum dot edge emitting lasers under continuous wave operation
Published in Applied physics letters (26-11-2012)“…Observation of sub-picosecond pulses from a single section Fabry Perot InAs/GaAs edge emitting quantum dot (QD) based laser at 1.3 μm under continuous wave…”
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10
Circulating tumor cell isolation during resection of colorectal cancer lung and liver metastases: a prospective trial with different detection techniques
Published in Cancer biology & therapy (01-01-2015)“…Background: Colorectal cancer (CRC) metastasectomy improves survival, however most patient develop recurrences. Circulating tumor cells (CTCs) are an…”
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11
Asymmetric corner frequency in the 1/f FM-noise PSD of optical frequency combs generated by quantum-dash mode-locked lasers
Published in Applied physics letters (31-10-2016)“…We experimentally investigate the corner frequency in the 1/f frequency noise of the longitudinal modes of an InAs/InP quantum-dash based single-section…”
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12
Dynamic characteristics of undoped and p-doped Fabry-Perot InAs/InP quantum dash based ridge waveguide lasers for access/metro networks
Published in Applied physics letters (06-10-2014)“…In this paper, we report the characteristics of InAs/InP quantum dashes (QDash) based lasers emitting around 1.55 μm. An unprecedented high modal gain of ∼100…”
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13
Frequency resolved optical gating characterization of sub-ps pulses from single-section InAs/InP quantum dash based mode-locked lasers
Published in Optics express (27-01-2014)“…Mode-locking of single-section Fabry-Pérot InAs/InP edge emitting quantum dash based lasers at 1.56 µm under continuous wave operation is studied by…”
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14
Low noise performance of passively mode locked quantum-dash-based lasers under external optical feedback
Published in Applied physics letters (28-09-2009)“…We report on a systematic investigation of the effect of external optical feedback on 17 GHz passively mode-locked two-section lasers based on InAs/InP quantum…”
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15
Separate Error-Free Transmission of Eight Channels at 10 Gb/s Using Comb Generation in a Quantum-Dash-Based Mode-Locked Laser
Published in IEEE photonics technology letters (01-12-2009)“…We report on comb generation at 1.55 mum using a mode-locked quantum-dash-based laser. A flat optical spectrum with a ~10-nm width consisting of eight…”
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16
Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser
Published in Optics express (07-07-2008)“…We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active…”
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17
Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
Published in Journal of crystal growth (15-01-2011)“…Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of…”
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Journal Article Conference Proceeding -
18
Single step measurement of optical transmitters Henry factor using sinusoidal optical phase modulations
Published in Optics express (24-10-2011)“…Measurement of the Henry factor over large optical bandwidth is carried out in a single step without any filtering, using a technique based on the sinusoidal…”
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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers
Published in Optics express (18-11-2013)“…Here we report for the first time a passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots(QDs) grown on (113)B InP…”
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20
Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
Published in Journal of crystal growth (2007)“…Thicknesses and compositions of AlGaInAs-based layers grown by low-pressure metal-organic vapor-phase epitaxy (LP-MOVPE) in the regime of selective area growth…”
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Journal Article Conference Proceeding