Search Results - "Raman, V.K."

Radiotracer investigation in a rotary fluidized bioreactor by Pant, H. J., Sharma, V. K., Singh, Gursharan, Raman, V. K., Bornare, J., Sonde, R. R.

“…A rotary fluidized bioreactor (RFBR) designed for treatment of wastewater was required to be investigated for its hydrodynamic behaviour and validation of…”
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Microbial desulphurization of coal containing pyritic sulphur in a continuously operated bench scale coal slurry reactor by Pandey, R.A., Raman, V.K., Bodkhe, S.Y., Handa, B.K., Bal, A.S.

“…Pre-combustion microbial desulphurization of coal containing total sulphur (3.90%) and pyritic sulphur (2.80%) has been evaluated in a coal slurry reactor. The…”
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Reactor systems for microbial desulfurization of coal: An overvlew by Raman, V.K.

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Effect of angiotensin II and III on inositol polyphosphate production in differentiated NG108-15 hybrid cells by Carrithers, M D, Raman, V K, Masuda, S, Weyhenmeyer, J A

“…Neuroblastoma x glioma hybrid cells (NG108-15), differentiated by treatment with 1.5% dimethyl sulfoxide (DMSO) and 0.5% fetal bovine serum, were used to…”
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DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures by Raman, V.K., Viswanathan, C.R., Kim, M.E.

“…The DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors (HBTs) have been investigated at room…”
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Covalent crosslinking analysis of angiotensin receptors on differentiated NG108-15 cells by Carrithers, M D, Koide, K A, Raman, V K, Masuda, S, Weyhenmeyer, J A

“…Neuroblastoma x glioma hybrid cells (NG108-15) were used as a model system to characterize neuronal-glial type angiotensin (ANG) receptors by covalent…”
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A general method for power flow analysis n MTDC systems by Padiyar, K.R., Raman, V.K.

“…This paper presents a novel and general approach for the power flow analysis in multiterminal DC systems. A major feature of this approach is the clear…”
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Electrical characterization of SOS n-MOSFETs at cryogenic temperatures by Wang, J., Chang, J., Raman, V.K., Vasudev, P.K., Viswanathan, C.R.

“…Summary form only given. The behavior of n-channel MOSFETs fabricated on thin film SOS structures is discussed. The devices exhibit stable electrical…”
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Low frequency noise in quantum-well GexSi1-x PMOSFET's by Chang, J., Nayak, D.K., Raman, V.K., Woo, J.C.S., Park, J.S., Wang, K.L., Viswanathan, C.R.

“…This paper describes the low frequency noise behavior of a quantum-well Ge x Si 1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel…”
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Interaction of titanium with single crystal silicon during rapid electron beam heating by Mahmood, F., Ahmed, H., Suleman, M., Raman, V. K.

“…The formation of titanium disilicide by the solid phase reaction of titanium with single crystal silicon has been studied using an electron beam heating method…”
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