Search Results - "Ramakrishnan, V N"

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance by Jaiswal, Nilesh Kumar, Ramakrishnan, V. N.

“…This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion…”
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Performance Analysis of Germanium-Silicon Vertical Tunnel Field-Effect Transistors (Ge-Si-VTFETs) for Analog/RF Applications by Ramkumar, K., Ramakrishnan, V. N.

“…The performance analysis of Ge-Si-VTFETs for analog/RF applications has been studied in this article under various gate dielectric materials. In the proposed…”
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Investigation of Hetero Buried Oxide and Gate Dielectric PNPN Tunnel Field Effect Transistors by Ramkumar, K., Ramakrishnan, V. N.

“…This paper investigates a novel hetero dielectric buried oxide and gate dielectric based PNPN tunnel field effect transistor (HDB-HDG-PNPN-TFET) using 2-D…”
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Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle by Usha, C., Vimala, P., Ramkumar, K., Ramakrishnan, V. N.

“…We use the superposition method to model the electrostatic characteristics of a high- k stacked gate-all-around heterojunction tunneling field-effect…”
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Conductive Filament Variation of RRAM and Its Impact on Single Event Upset by Vijay, H. M., Ramakrishnan, V. N.

“…Resistive random-access memory (RRAM) is a non-charge-based two-terminal non-volatile memory device. It is a promising candidate for usage in high radiation…”
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Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET by Saritha, N. R., Pravin, J. Charles, Sandeep, V., J, Josephine Selle, Ramakrishnan, V. N.

“…Lowering power consumption has emerged as the primary goal as silicon circuits become more compact. Furthermore, the ultra-highly integrated circuit will…”
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Pressure Sensors Using Si/ZnO Heterojunction Diode by Dhanaselvam, P. Suveetha, Kumar, D. Sriram, Ramakrishnan, V. N., Ramkumar, K., Balamurugan, N. B.

“…In nanoregime, heterojunction diodes have efficient applications in design and fabrication of sensors. Heterojunction diodes are formed by fusing two…”
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Gate and drain SEU sensitivity of sub-20-nm FinFET- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation by Nilamani, S., Ramakrishnan, V. N.

“…Scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) to below a few tens of nanometer has failed to make significant improvements. FinFETs…”
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Radiation effects on memristor-based non-volatile SRAM cells by Vijay, H. M., Ramakrishnan, V. N.

“…Memristors are a promising candidate for non-volatile memory elements. In this paper, we performed a radiation study on different memristor-based topological…”
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Influence of trap carriers in SiO2/HfO2 stacked dielectric cylindrical gate tunnel fet by Anand, I. Vivek, Samuel, T. S. Arun, Ramakrishnan, V. N., Ram Kumar, K.

“…The influence of trap carriers at the Si-SiO 2 interface near the source channel junction is analysed in this paper. The drain current is computed using the…”
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Dual-chirality GAA-CNTFET-based SCPF-TCAM cell design for low power and high performance by Satyanarayana, S. V. V., Shailendra, Singh Rohitkumar, Ramakrishnan, V. N., Sriadibhatla, Sridevi

“…Ternary content-addressable memory (TCAM) is a type of associative memory used in many applications for high-speed data searching. We present herein a…”
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Effects of Co-doping on the Transport Characteristics of Nanoscale n-type Silicon-on-Insulator Transistors by Pandy, C., Debnath, A., Yamaguchi, K., Jupalli, T. Teja, Prabhudesai, G., V.N., Ramakrishnan, Neo, Y., Mimura, H., Moraru, D.

“…In conventional downscaled Si transistors, the role of discrete dopants in nano-channels becomes critical; uniform high doping is desirable. Even in such…”
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Effect of underlap and soft error performance in 30 nm FinFET-based 6T-SRAM cells with simultaneous and independent driven gates by Ramakrishnan, V. N., Srinivasan, R.

“…The effect of Gate-Source/Drain underlap ( L un ) on soft error performance in 30 nm common double gate-FinFET (simultaneously driven gates) and independent…”
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Vertical GaN Split Gate Trench MOSFET with Improved High Frequency FOM by Jaiswal, Nilesh Kumar, Ramakrishnan, V. N., Roy, Sukhendu Deb

“…Using TCAD Simulation, we present a systematic analysis and comparison of a new vertical GaN split gate trench MOSFET (SGT-MOSFET) with a conventional trench…”
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AC Gain analysis of Multi-stage Common Source Amplifier Using GAA-CNTFET by Shailendra, Singh Rohitkumar, Chitra, P., Ramakrishnan, V.N., Mimura, Hidenori

“…Carbon Nanotube Field Effect Transistor (CNTFET) is cutting-edge technology where the demand for transistor scaling is increasing day by day industrially…”
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A Novel Approach to Analyze the Resistance of the RRAM Based on the Conductive Nano Filament Length and Width Variation by Vijay, H. M., Ramakrishnan, V. N.

“…In the present as well as in the future world, the interaction of a person with the connected devices will be more. It has been predicted that these…”
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A Novel Approach to Analyze Current-Voltage Characteristics of Double Gated-Memristor by Vijay, H M, Ramakrishnan, V N

“…Memristor is a nano-electronic device which relates charge and flux. It is an excellent candidate for emerging technologies. Memristor exits as either two- or…”
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Vertical GaN Reverse Trench-Gate Power MOSFET and DC-DC Converter by Jaiswal, Nilesh Kumar, Ramakrishnan, V. N.

“…A vertical GaN reverse trench-gate power MOSFET (RT-MOSFET) device is proposed. This Vertical RT-MOSFET features the negative incline of broaden-trench…”
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A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs by Dhanaselvam, P. Suveetha, Balamurugan, N.B., Ramakrishnan, V.N.

“…A 2D analytical model for transconductance, Sub-threshold current and Sub-threshold swing for Triple Material Surrounding Gate MOSFET (TMSG) is presented in…”
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Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance by Nilamani, S., Chitra, P., Ramakrishnan, V.N.

“…Introduction of new conduction mechanism called junctionless in MOSFETs takes us to another direction in device fabrication. Moving from inversion to…”
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