Search Results - "Ramadout, B."

Multigate MOSFET in a Bulk Technology by Integrating Polysilicon-Filled Trenches by Ramadout, B., Guo-Neng Lu, Carrere, J.-P., Pinzelli, L., Perrot, C., Rivoire, M., Nemouchi, F.

“…We present a new device structure consisting of a MOSFET with two additional lateral trench gates. This multigate MOSFET can be implemented and fabricated in a…”
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Electrical spin injection into InGa(N)As quantum structures and single InGaAs quantum dots by Hetterich, M., Löffler, W., Fallert, J., Höpcke, N., Burger, H., Passow, T., Li, S., Daniel, B., Ramadout, B., Lupaca-Schomber, J., Hetterich, J., Litvinov, D., Gerthsen, D., Klingshirn, C., Kalt, H.

“…We investigate electrical spin injection from a semi‐magnetic n‐type ZnMnSe spin aligner into III–V p–i–n diodes with InGaAs quantum dots (QDs) in the active…”
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A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives by Chevalier, P., Avenier, G., Ribes, G., Montagne, A., Canderle, E., Celi, D., Derrier, N., Deglise, C., Durand, C., Quemerais, T., Buczko, M., Gloria, D., Robin, O., Petitdidier, S., Campidelli, Y., Abbate, F., Gros-Jean, M., Berthier, L., Chapon, J. D., Leverd, F., Jenny, C., Richard, C., Gourhant, O., De-Buttet, C., Beneyton, R., Maury, P., Joblot, S., Favennec, L., Guillermet, M., Brun, P., Courouble, K., Haxaire, K., Imbert, G., Gourvest, E., Cossalter, J., Saxod, O., Tavernier, C., Foussadier, F., Ramadout, B., Bianchini, R., Julien, C., Ney, D., Rosa, J., Haendler, S., Carminati, Y., Borot, B.

“…This paper presents the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics. The technology features Low Power (LP) and…”
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MOSFET with additional lateral trench gate by Ramadout, B., Guo-Neng Lu, Carrere, J.-P.

“…We present a device structure consisting of a MOS transistor with additional lateral trench gate (LTG). It can be seen as two transistors with surface and…”
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Effects of technological and geometrical parameters of a tri-gate MOSFET fabricated in a bulk technology by Ramadout, B., Lu, G.-N., Carrere, J.P., Pinzelli, L., Perrot, C., Rivoire, M., Nemouchi, F.

“…We have investigated, by TCAD simulations, a tri-gate MOSFET fabricated in a bulk CMOS technology. By biasing both lateral-gates with the same voltage, this…”
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