Search Results - "Ralston, J.D."

HPR81 Effect of Medicare Eligibility at Age 65 Years on Prescription of High-Risk Medications in Individuals with Multiple Chronic Conditions by Tabah, A., Park, S., Ralston, J.D., Hansen, R.N., Yeung, K.

Get full text

Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy by Schmitz, J., Wagner, J., Fuchs, F., Herres, N., Koidl, P., Ralston, J.D.

“…Several issues related to the interface structure in molecular-beam epitaxially grown InAs/AlSb and InAs/GaSb heterostructures are investigated by Raman…”
Get full text

Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers by Ralston, J.D., Weisser, S., Esquivias, I., Larkins, E.C., Rosenzweig, J., Tasker, P.J., Fleissner, J.

“…Utilizing small-signal direct modulation and relative intensity noise measurements, the authors investigate changes in the modulation response, the…”
Get full text

Home blood pressure monitoring, secure electronic messaging and medication intensification for improving hypertension control by Ralston, J.D., Cook, A.J., Anderson, M.L., Catz, S.L., Fishman, P.A., Carlson, J., Johnson, R., Green, B.B.

“…Summary Objective: We evaluated the role of home monitoring, communication with pharmacists, medication intensification, medication adherence and lifestyle…”
Get full text

Influences of MBE growth processes on photovoltaic 3-5 /spl mu/m intersubband photodetectors by Larkins, E.C., Schneider, H., Ehret, S., Fleissner, J., Dischler, B., Koidl, P., Ralston, J.D.

“…The asymmetric photoresponse and dark current of GaAs/AlAs/Al/sub 0.3/Ga/sub 0.7/As 3-5 /spl mu/m intersubband photodetectors is examined both experimentally…”
Get full text

Home blood pressure monitoring, secure electronic messaging and medication intensification for improving hypertension control: a mediation analysis by Ralston, J D, Cook, A J, Anderson, M L, Catz, S L, Fishman, P A, Carlson, J, Johnson, R, Green, B B

“…We evaluated the role of home monitoring, communication with pharmacists, medication intensification, medication adherence and lifestyle factors in…”
Get full text

Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers by Weisser, S., Larkins, E.C., Czotscher, K., Benz, W., Daleiden, J., Esquivias, I., Fleissner, J., Ralston, J.D., Romero, B., Sah, R.E., Schonfelder, A., Rosenzweig, J.

“…We demonstrate record direct modulation bandwidths from MBE-grown In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers with undoped active regions and…”
Get full text

Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers by Esquivias, I., Weisser, S., Romero, B., Ralston, J.D., Rosenzweig, J.

“…We investigate the effects of carrier capture and re-emission on the electrical impedance, equivalent circuit, and modulation response of quantum-well (QW)…”
Get full text

Impedance characteristics of quantum-well lasers by Weisser, S., Esquivias, I., Tasker, P.J., Ralston, J.D., Romero, B., Rosenzweig, J.

“…We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model. These electrical…”
Get full text

Intersubband Raman scattering in [formula omitted] quantum wells by Wagner, J., Schmitz, J., Richards, D., Ralston, J.D., Koidl, P.

“…Raman spectroscopy has been used to study intersubband transitions in InAs AlSb single quantum wells grown by molecular-beam epitaxy on (100) GaAs substrates…”
Get full text

Impedance, modulation response, and equivalent circuit of ultra-high-speed In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers with p-doping by Weisser, S., Esquivias, I., Tasker, P.J., Ralston, J.D., Rosenzweig, J.

“…On-wafer measurements of the frequency-dependent impedance, modulation response, and RIN power spectra of ultra-high-speed p-doped In/sub 0.35/Ga/sub…”
Get full text

Theoretical investigation of gain enhancements in strained In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers via p-doping by Schonfelder, A., Weisser, S., Esquivias, I., Ralston, J.D., Rosenzweig, J.

“…We present a systematic theoretical investigation of the influence of p-doping on the gain characteristics of strained In/sub 0.35/Ga/sub 0.65/As/GaAs…”
Get full text

Uncooled high-temperature (130/spl deg/C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s by Czotscher, K., Larkins, E.C., Weisser, S., Benz, W., Daleiden, J., Fleissner, J., Maier, M., Ralston, J.D., Rosenzweig, J.

“…Short-haul fiber-optic communication systems require high-speed semiconductor lasers that can operate uncooled over a wide temperature range. We describe…”
Get full text

Influences of MBE growth processes on photovoltaic 3--5 [mu]m intersubband photodetectors by Larkins, E.C., Schneider, H., Ehret, S., Fleissner, J., Dischler, B., Koidl, P., Ralston, J.D.

“…The asymmetric photoresponse and dark current of GaAs/AlAs/Al[sub 0.3]Ga[sub 0.7]As 3-5[mu]m intersubband photodetectors is examined both experimentally and…”
Get full text

Differential gain, refractive index, and linewidth enhancement factor in high-speed GaAs-based MQW lasers: influence of strain and p-doping by Schonfelder, A., Weisser, S., Ralston, J.D., Rosenzweig, J.

“…The addition of strain and p-doping in high-speed GaAs-based MQW lasers are assessed experimentally in terms of their potential for both increasing the…”
Get full text

Wavelength tuning of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion by Burkner, S., Ralston, J.D., Weisser, S., Rosenzweig, J., Larkins, E.C., Sah, R.E., Fleissner, J.

“…The impurity-free interdiffusion technique has been utilized to modify the operating wavelength of high-speed In/sub 0.3G/a/sub 0.65/As-GaAs multiple quantum…”
Get full text

Improved performance from pseudomorphic InyGa/sub 1-y/As-GaAs MQW lasers with low growth temperature AlxGa/sub 1-x/As short-period superlattice cladding by Larkins, E.C., Benz, W., Esquivias, I., Rothemund, W., Baeumler, M., Weisser, S., Schonfelder, A., Fleissner, J., Jantz, W., Rosenzweig, J., Ralston, J.D.

“…We present results from In/sub 0.35/Ca/sub 0.65/As-GaAs 4 QW lasers whose Al/sub 0.8/Ga/sub 0.2/As binary short-period superlattice (SPSL) cladding layers were…”
Get full text

Improved performance from pseudomorphic In y Ga/sub 1-y/As-GaAs MQW lasers with low growth temperature Al x Ga/sub 1-x/As short-period superlattice cladding by Larkins, E.C., Benz, W., Esquivias, I., Rothemund, W., Baeumler, M., Weisser, S., Schonfelder, A., Fleissner, J., Jantz, W., Rosenzweig, J., Ralston, J.D.

Get full text

Room-temperature, high-deposition-rate, plasma-enhanced chemical vapour deposition of silicon oxynitride thin films producing low surface damage on lattice-matched and pseudomorphic III–V quantum-well structures by Sah, R.E., Ralston, J.D., Eichin, G., Dischler, B., Rothemund, W., Wagner, J., Larkins, E.C., Baumann, H.

“…Silicon oxynitride thin films have been deposited at room temperature on GaAs using the PECVD technique with SiH 4, N 2O and Ar in a modified magnetron…”
Get full text

Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers by Ralston, J.D., Weisser, S., Eisele, K., Sah, R.E., Larkins, E.C., Rosenzweig, J., Fleissner, J., Bender, K.

“…Modulation bandwidths of 24 GHz (I/sub bias/=25 mA) and 33 GHz (I/sub bias/=65 mA) are demonstrated for 3×100 μm 2 In/sub 0.35/Ga/sub 0.65/As/GaAs multiple…”
Get full text