Search Results - "Ralston, J. D."

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    So you say our work is essential: Essential workers and the potential for transformative learning in the wake of COVID‐19 social and economic disruption by Scully‐Russ, Ellen, Cseh, Maria, Hakimi, Lily, Philip, Jerry, Lundgren, Henriette, Ralston, DJ

    “…At the start of the COVID‐19 pandemic, some US workers became “essential” overnight and were, therefore, ineligible to work from home. Millions of these…”
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    Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers by Esquivias, I., Weisser, S., Romero, B., Ralston, J.D., Rosenzweig, J.

    Published in IEEE journal of quantum electronics (01-04-1999)
    “…We investigate the effects of carrier capture and re-emission on the electrical impedance, equivalent circuit, and modulation response of quantum-well (QW)…”
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    Home blood pressure monitoring, secure electronic messaging and medication intensification for improving hypertension control: a mediation analysis by Ralston, J D, Cook, A J, Anderson, M L, Catz, S L, Fishman, P A, Carlson, J, Johnson, R, Green, B B

    Published in Applied clinical informatics (2014)
    “…We evaluated the role of home monitoring, communication with pharmacists, medication intensification, medication adherence and lifestyle factors in…”
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    Incidence of Severe Unintentional Carbon Monoxide Poisoning Differs across Racial/Ethnic Categories by RALSTON, J. D, HAMPSON, N. B

    Published in Public health reports (1974) (01-01-2000)
    “…Objective: This study was conducted to test the hypothesis that the incidence of severe, acute, unintentional carbon monoxide (CO) poisoning differs across…”
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    Impedance characteristics of quantum-well lasers by Weisser, S., Esquivias, I., Tasker, P.J., Ralston, J.D., Romero, B., Rosenzweig, J.

    Published in IEEE photonics technology letters (01-12-1994)
    “…We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model. These electrical…”
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    Space-charge effects in photovoltaic double barrier quantum well infrared detectors by SCHNEIDER, H, LARKINS, E. C, RALSTON, J. D, SCHWARZ, K, FUCHS, F, KOIDL, P

    Published in Applied physics letters (09-08-1993)
    “…We show that the spatial distribution of the dopants strongly influences the transport asymmetry and the photovoltage observed in double barrier quantum well…”
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    Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers by Ralston, J.D., Weisser, S., Esquivias, I., Larkins, E.C., Rosenzweig, J., Tasker, P.J., Fleissner, J.

    Published in IEEE journal of quantum electronics (01-06-1993)
    “…Utilizing small-signal direct modulation and relative intensity noise measurements, the authors investigate changes in the modulation response, the…”
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    Room-temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices by RALSTON, J. D, O'BRIEN, S, WICKS, G. W, EASTMAN, L. F

    Published in Applied physics letters (02-05-1988)
    “…Substantial increases are observed in the energies of room-temperature exciton transitions in GaAs/AlGaAs superlattices which have been partially intermixed…”
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    Differential gain, refractive index, and linewidth enhancement factor in high-speed GaAs-based MQW lasers: influence of strain and p-doping by Schonfelder, A., Weisser, S., Ralston, J.D., Rosenzweig, J.

    Published in IEEE photonics technology letters (01-08-1994)
    “…The addition of strain and p-doping in high-speed GaAs-based MQW lasers are assessed experimentally in terms of their potential for both increasing the…”
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    Transport asymmetry and photovoltaic response in (AlGa)As/AlAs/GaAs/(AlGa)As single-barrier quantum-well infrared detectors by SCHNEIDER, H, KHENG, K, RAMSTEINER, M, RALSTON, J. D, FUCHS, F, KOIDL, P

    Published in Applied physics letters (23-03-1992)
    “…We have studied the wavelength and electric-field characteristics of intersubband photodetectors where a thin AlAs tunnel barrier was introduced between one…”
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    Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures by SAH, R. E, RALSTON, J. D, DALEIDEN, J, LARKINS, E. C, WEISSER, S, FLEISSNER, J, BENZ, W

    Published in Journal of electronic materials (01-09-1996)
    “…We have fabricated dry-etched mirrors in high-speed InGaAs/GaAs/AlGaAs pseudomorphic multiple quantum well ridge-waveguide lasers at 60°C and in InGaAs/InP…”
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    Unintentional As incorporation in molecular beam epitaxially grown InAs/AlSb/GaSb heterostructures by SCHMITZ, J, WAGNER, J, MAIER, M, OBLOH, H, KOIDL, P, RALSTON, J. D

    Published in Journal of electronic materials (01-11-1994)
    “…We investigate unintentional arsenic incorporation during the molecular-beam epitaxial growth of InAs/AlSb/GaSb heterostructures, using both a standard As4…”
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    Crossing to safety: transforming healthcare organizations for patient safety by Ralston, J D, Larson, E B

    Published in Journal of postgraduate medicine (Bombay) (01-01-2005)
    “…The current healthcare system is not designed to ensure better patient safety. In addition, healthcare is simultaneously becoming increasingly complex and…”
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    Room-temperature exciton electroabsorption in partially intermixed GaAs/AlGaAs quantum well waveguides by RALSTON, J. D, SCHAFF, W. J, BOUR, D. P, EASTMAN, L. F

    Published in Applied physics letters (06-02-1989)
    “…Perpendicular field electroabsorption is measured for the first time in GaAs/AlGaAs quantum well (QW) structures which have been modified via partial…”
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    Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scattering by WAGNER, J, ALVAREZ, A.-L, SCHMITZ, J, RALSTON, J. D, KOIDL, P

    Published in Applied physics letters (19-07-1993)
    “…Electric-field-induced Raman scattering by longitudinal optical (LO) phonons has been used to study the surface Fermi level position in InSb layers grown by…”
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    Intersubband Raman scattering in InAs/AlSb quantum wells by Wagner, J, Schmitz, J, Richards, D, Ralston, J D, Koidl, P

    Published in Solid-state electronics (01-01-1996)
    “…Raman spectroscopy has been used to study intersubband transitions in InAs/AlSb single quantum wells grown by molecular-beam epitaxy on (100) GaAs substrates…”
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