Search Results - "Rajpalke, M. K."

Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite by Anyebe, E. A, Sanchez, A. M, Hindmarsh, S, Chen, X, Shao, J, Rajpalke, M. K, Veal, T. D, Robinson, B. J, Kolosov, O, Anderson, F, Sundaram, R, Wang, Z. M, Falko, V, Zhuang, Q

“…The monolithic integration of InAs1–x Sb x semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and…”
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Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy by Kumar, Mahesh, Bhat, T. N., Rajpalke, M. K., Roul, B., Misra, P., Kukreja, L. M., Sinha, Neeraj, Kalghatgi, A. T., Krupanidhi, S. B.

“…Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on…”
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Growth and properties of GaSbBi alloys by Rajpalke, M. K., Linhart, W. M., Birkett, M., Yu, K. M., Scanlon, D. O., Buckeridge, J., Jones, T. S., Ashwin, M. J., Veal, T. D.

“…Molecular-beam epitaxy has been used to grow GaSb1−xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by…”
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Bi-induced band gap reduction in epitaxial InSbBi alloys by Rajpalke, M. K., Linhart, W. M., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., Sallis, S., Piper, L. F. J., Jones, T. S., Ashwin, M. J., Veal, T. D.

“…The properties of molecular beam epitaxy-grown InSb1−xBix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases…”
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Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance by Kopaczek, J., Kudrawiec, R., Linhart, W. M., Rajpalke, M. K., Yu, K. M., Jones, T. S., Ashwin, M. J., Misiewicz, J., Veal, T. D.

“…GaSb1−xBix layers with 0 < x ≤ 0.042 have been studied by photoreflectance in 15–290 K temperature range. We found that due to the incorporation of Bi atoms…”
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Bi flux-dependent MBE growth of GaSbBi alloys by Rajpalke, M.K., Linhart, W.M., Yu, K.M., Jones, T.S., Ashwin, M.J., Veal, T.D.

“…The incorporation of Bi in GaSb1−xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275°C) and…”
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Band gap reduction in InNxSb1-x alloys: Optical absorption, k · P modeling, and density functional theory by Linhart, W M, Rajpalke, M K, Buckeridge, J, Murgatroyd P A E, Bomphrey, J J, Alaria, J, Catlow C R A, Ashwin, M J, Veal, T D

“…Using infrared absorption, the room temperature band gap of InSb is found to reduce from 174 (7.1 μm) to 85 meV (14.6 μm) upon incorporation of up to 1.13% N,…”
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Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys by Kopaczek, J., Rajpalke, M. K., Linhart, W. M., Jones, T. S., Ashwin, M. J., Kudrawiec, R., Veal, T. D.

“…Molecular beam epitaxy is used to grow Ga1−yInySb1−xBix (y ≤ 5.5% and x ≤ 2.5%) and AlyGa1−ySb1−xBix alloys (y ≤ 6.6% and x ≤ 2.0%). The alloy composition and…”
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Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires by Anyebe, E. A., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M., Zhuang, Q. D.

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Surfactant effect of antimony addition to the morphology of self-catalyzed InAS1-xSbx nanowires by Anyebe, E. A., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M., Zhuang, Q. D.

“…The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires （NWs） has been systematically investigated. InAs NWs were grown by molecular…”
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Band gap reduction in InN x Sb1- x alloys: Optical absorption, k · P modeling, and density functional theory by Linhart, W. M., Rajpalke, M. K., Buckeridge, J., Murgatroyd, P. A. E., Bomphrey, J. J., Alaria, J., Catlow, C. R. A., Scanlon, D. O., Ashwin, M. J., Veal, T. D.

“…Using infrared absorption, the room temperature band gap of InSb is found to reduce from 174 (7.1 μm) to 85 meV (14.6 μm) upon incorporation of up to 1.13% N,…”
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Surfactant effect of antimony addition to the morphology of self-catalyzed InAs sub(1-x)Sb sub(x) nanowires by Anyebe, E A, Rajpalke, M K, Veal, T D, Jin, C J, Wang, Z M, Zhuang, Q D

“…The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated. InAs NWs were grown by molecular…”
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Surfactant effect of antimony addition to the morphology of self-catalyzed InAs^sub 1-x^Sb^sub x^ nanowires by Anyebe, E A, Rajpalke, M K, Veal, T D, Jin, C J, Wang, Z M, Zhuang, Q D

“…The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated. InAs NWs were grown by molecular…”
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Bi-induced band gap reduction in epitaxial InSbBi alloys by Rajpalke, M. K., Linhart, W. M., Birkett, M., Alaria, J., Veal, T. D., Yu, K. M., Bomphrey, J. J., Jones, T. S., Ashwin, M. J., Sallis, S., Piper, L. F. J.

“…The properties of molecular beam epitaxy-grown InSb{sub 1−x}Bi{sub x} alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content…”
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Temperature dependence of the band gap of GaSb{sub 1−x}Bi{sub x} alloys with 0 < x ≤ 0.042 determined by photoreflectance by Kopaczek, J., Misiewicz, J., Kudrawiec, R., Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, Linhart, W. M., Rajpalke, M. K., Veal, T. D., Yu, K. M., Jones, T. S., Ashwin, M. J.

“…GaSb{sub 1−x}Bi{sub x} layers with 0 < x ≤ 0.042 have been studied by photoreflectance in 15–290 K temperature range. We found that due to the incorporation of…”
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