The caracterization of the CdS-based solar cell heterojunctions

The CdS-based solar cell heterojunctions (HJ) have been obtained by growth of CdS at relatively lower temperature using the close space sublimation method (CSS). Investigation of the photovoltaic characteristics shows an efficiency of about 12 % for InP/CdS and 9.6 % for CdS/CdTe solar cell HJ. The...

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Bibliographic Details
Published in:	CAS 2010 Proceedings (International Semiconductor Conference) Vol. 1; pp. 105 - 108
Main Authors:	Potlog, T, Botnariuc, V, Gorceac, L, Spalatu, N, Maticiuc, N, Raievschi, S
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-10-2010
Subjects:	capacitance-voltage and photovoltaic characteristics dark forward-bias current Heterojunctions Indium phosphide Interface states Photovoltaic cells Photovoltaic systems solar cell heterojunction
Online Access:	Get full text
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Summary:	The CdS-based solar cell heterojunctions (HJ) have been obtained by growth of CdS at relatively lower temperature using the close space sublimation method (CSS). Investigation of the photovoltaic characteristics shows an efficiency of about 12 % for InP/CdS and 9.6 % for CdS/CdTe solar cell HJ. The analysis of the forward dark current-voltage and the capacitance-voltage characteristics indicate a tunnelling recombination current which flows through states near or at the interfaces of a thermal energy of about 0.62 eV for CdS/CdTe and 0.42 eV for InP/CdS solar cell heterojunctions. The solar energy conversion efficiency is influenced by the interface states through the open circuit voltage and the fill factor.
ISBN:	9781424457830 1424457831
ISSN:	1545-827X 2377-0678
DOI:	10.1109/SMICND.2010.5650233