Search Results - "Rahhal, Lama"

Prevalence of Tooth Agenesis in Patients Visiting a Dental College in UAE- A Retrospective Study by Padmanabhan, Vivek, Rahman, Mustahsen, Rahhal, Lama M Kamel, Mostafa, Omar Khaled A R Abo

“…Agenesis comprises of the most common developmental anomaly of the human dentition, and is seen to affect at least about 25% of the population. The aim of this…”
Get full text

High sensitivity pH sensing on the BEOL of industrial FDSOI transistors by Rahhal, Lama, Ayele, Getenet Tesega, Monfray, Stéphane, Cloarec, Jean-Pierre, Fornacciari, Benjamin, Pardoux, Eric, Chevalier, Celine, Ecoffey, Serge, Drouin, Dominique, Morin, Pierre, Garnier, Philippe, Boeuf, Frederic, Souifi, Abdelkader

“…•FDSOI transistors as pH sensors with a 23nm silicon nitride sensing layer.•pH tests in the range of pH 6 to 8 on transistors controlled via the back gate.•Vt…”
Get full text

Novel Concept of Gas Sensitivity Characterization of Materials Suited for Implementation in FET-Based Gas Sensors by Ayadi, Yosri, Rahhal, Lama, Vilquin, Bertrand, Chevalier, Céline, Ambriz Vargas, Fabian, Ecoffey, Serge, Ruediger, Andreas, Sarkissian, Andranik, Monfray, Stéphane, Cloarec, Jean-Pierre, Drouin, Dominique, Souifi, Abdelkader

“…We propose a novel technique to investigate the gas sensitivity of materials for implementation in field-effect transistor-based gas sensors. Our technique is…”
Get full text

A comparative mismatch study of the 20nm Gate-Last and 28nm Gate-First bulk CMOS technologies by Rahhal, Lama, Bajolet, Aurelie, Manceau, Jean-Philippe, Rosa, Julien, Ricq, Stephane, Lassere, Sebastien, Ghibaudo, Gerard

“…In this work the threshold voltage (Vt), the current gain factor (β), and the drain current (ID) mismatch trends for 20nm Gate-Last bulk CMOS technology…”
Get full text

Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances by Rahhal, Lama, Bajolet, Aurélie, Cros, Antoine, Diouf, Cheikh, Kergomard, Flore, Rosa, Julien, Bidal, Gregory, Bianchi, Raul-Andres, Ghibaudo, Gérard

“…•Impact of Ge content on Vt, β, and Id mismatches in advanced PMOSFETs.•Global improvement ofelectrical parameters mismatchobserved in PMOSETs with SiGe…”
Get full text

Cascode configuration as a substitute to LDE MOSFET for improved electrical mismatch performance by Rahhal, Lama, Bertrand, Guillaume, Bajolet, Aurelie, Rosa, Julien, Ghibaudo, Gerard

“…The work presented in this paper investigates the possibility of replacing a Lateral Drain Extended MOS (LDEMOS) SOI transistors by a cascode configuration to…”
Get full text

Mismatch trends in 20nm gate-last bulk CMOS technology by Rahhal, Lama, Bajolet, Aurelie, Manceau, Jean-Philippe, Rosa, Julien, Ricq, Stephane, Lassere, Sebastien, Ghibaudo, Gerard

“…In this work Vt and β mismatch for the 20 nm Gate-last bulk CMOS technology are investigated for the first time. Our results indicate that the 20 nm Gate-last…”
Get full text