Search Results - "Rafí, J.M."

"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS by Mercha, A., Rafi, J.M., Simoen, E., Augendre, E., Claeys, C.

“…In this paper, evidence will be provided for the existence of a new class of floating body effects, occurring in SOI and bulk MOSFETs in the linear operation…”
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Spectrometric performance of SiC radiation detectors at high temperature by Jiménez-Ramos, M.C., García Osuna, A., Rodriguez-Ramos, M., Viezzer, E., Pellegrini, G., Godignon, P., Rafí, J.M., Rius, G., García López, J.

“…In this work, we have investigated the performance of a 4H–SiC radiation sensor in the temperature range from 25 °C to 450 °C to explore its compatibility as…”
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Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects by Rafí, J.M., Quirion, D., Duch, M., Lopez Paz, I., Dauderys, V., Claus, T., Moffat, N., Molas, B., Tsunoda, I., Yoneoka, M., Takakura, K., Kramberger, G., Moll, M., Pellegrini, G.

“…•Fabrication of ultrathin silicon beam position monitors from SOI substrates.•Characterization of single and four-quadrant ultrathin silicon…”
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IBIC analysis of SiC detectors developed for fusion applications by Jiménez-Ramos, M.C., López, J. García, Osuna, A. García, Rodríguez-Ramos, M., Barroso, A. Villalpando, Muñoz, M. García, Andrade, E., Pellegrini, G., Ugobono, S. Otero, Godignon, P., Rafí, J.M., Rius, G.

“…In this work, we consider a 4H-SiC detector as a plasma diagnostic system for the detection of fusion-born alpha particles in future nuclear fusion reactors. A…”
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Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric by Rafí, J.M., Pellegrini, G., Fadeyev, V., Galloway, Z., Sadrozinski, H.F.-W., Christophersen, M., Phlips, B.F., Lynn, D., Kierstead, J., Hoeferkamp, M., Gorelov, I., Palni, P., Wang, R., Seidel, S.

“…•Gamma and proton irradiation effects and thermal stability of Al2O3 layers for Si passivation.•MOS capacitors implementing differently processed ALD Al2O3…”
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2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics by Rafí, J.M., Campabadal, F., Ohyama, H., Takakura, K., Tsunoda, I., Zabala, M., Beldarrain, O., González, M.B., García, H., Castán, H., Gómez, A., Dueñas, S.

“…► 2MeV electron irradiation on ALD Al2O3, HfO2 and nanolaminate Si MOS capacitors. ► Similar charge trapping and interface states generation for the three…”
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Impact of electrical stress on the electrical characteristics of 2MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics by Rafí, J.M., González, M.B., Takakura, K., Tsunoda, I., Yoneoka, M., Beldarrain, O., Zabala, M., Campabadal, F.

“…•Electrical stress on electron irradiated Al2O3, HfO2 and nanolaminate Si MOS capacitors.•Significant polarity dependence in interface states generation and…”
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Comparison of radiation hardness of P-in-N, N-in-N, and N-in-P silicon pad detectors by Lozano, M., Pellegrini, G., Fleta, C., Loderer, C., Rafi, J.M., Ullan, M., Campabadal, F., Martinez, C., Key, M., Casse, G., Allport, P.

“…The very high radiation fluence expected at LHC (Large Hadron Collider) at CERN will induce serious changes in the electrical properties of the silicon…”
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2MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness by Rafí, J.M., González, M.B., Takakura, K., Tsunoda, I., Yoneoka, M., Beldarrain, O., Zabala, M., Campabadal, F.

“…•2 MeV electron irradiation on Si MOS capacitors with ALD Al2O3 of different thickness.•Capacitance-voltage and current-voltage characteristics as a funtion of…”
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2MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon by García, H., Castán, H., Dueñas, S., Bailón, L., Campabadal, F., Rafí, J.M., Zabala, M., Beldarrain, O., Ohyama, H., Takakura, K., Tsunoda, I.

“…2MeV electron irradiation effects on the electrical properties of Al2O3 and HfO2-based metal–insulator–semiconductor capacitors have been studied. High-k…”
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Charge trapping and electrical degradation in atomic layer deposited Al2O3 films by Gonzalez, M.B., Rafí, J.M., Beldarrain, O., Zabala, M., Campabadal, F.

“…•The electrical stress effects have been investigated in Al/Al2O3/n+Si capacitors.•Electron trapping and HBD phenomena dominate under substrate…”
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Analysis of 2-MeV Electron-Irradiation Induced Degradation in FD-SOI MOSFETs Fabricated on ELTRAN and UNIBOND Wafers by Hayama, K., Takakura, K., Ohyama, H., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C.

“…The degradation of the electrical performance of 2-MeV electron-irradiated thin gate oxide FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers is reported…”
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2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon by GARCIA, H, CASTAN, H, TSUNODA, I, DUENAS, S, BAILON, L, CAMPABADAL, F, RAFI, J. M, ZABALA, M, BELDARRAIN, O, OHYAMA, H, TAKAKURA, K

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Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition by Conde, A., Martínez, C., Jiménez, D., Miranda, E., Rafí, J.M., Campabadal, F., Suñé, J.

“…► Percolation model applied to the breakdown statistics of Al2O3/HfO2 nanolaminates. ► Nanolaminate breakdown distribution is predicted from those of separate…”
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Germanium doping for improved silicon substrates and devices by Vanhellemont, J., Chen, J., Lauwaert, J., Vrielinck, H., Xu, W., Yang, D., Rafí, J.M., Ohyama, H., Simoen, E.

“…During the last decade, the 300 mm silicon wafer has been optimized and one is studying the move to 450 mm crystals and wafers. The ever increasing silicon…”
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Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs by Hayama, K., Takakura, K., Ohyama, H., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C., Kokkoris, M.

“…The degradation of deep submicron (0.1 /spl mu/m) fully depleted (FD)-silicon-on-insulator (SOI) n-channel metal oxide semiconductor field effect transistors…”
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Soft breakdown in irradiated high-κ nanolaminates by Palumbo, F., Quinteros, C., Campabadal, F., Rafí, J.M., Zabala, M., Miranda, E.

“…In this paper the electrical characteristics of different atomic layer deposited (ALD) high permittivity dielectric films (Al 2O 3 and Al 2O 3/HfO 2…”
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Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation by Rafí, J.M., Boulord, C., Hayama, K., Ohyama, H., Campabadal, F., Pellegrini, G., Lozano, M., Simoen, E., Claeys, C.

“…Particle-tracking detectors made on high-resistivity (HR) float zone (FZ) silicon are widely used in high-energy physics experiments. It is known that the…”
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Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics by MARTINEZ-DOMINGO, C, SAURA, X, CONDE, A, JIMENEZ, D, MIRANDA, E, RAFI, J. M, CAMPABADAL, F, SUNE, J

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Initial leakage current related to extrinsic breakdown in HfO 2/Al 2O 3 nanolaminate ALD dielectrics by Martínez-Domingo, C., Saura, X., Conde, A., Jiménez, D., Miranda, E., Rafí, J.M., Campabadal, F., Suñé, J.

“…Multiple successive breakdown events are reported for HfO 2/Al 2O 3 nanolaminate dielectrics grown by atomic-layer deposition. The first breakdown distribution…”
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