SiCN alloys obtained by remote plasma chemical vapour deposition from novel precursors

Silicon carbonitride films were synthesised in a remote plasma chemical vapour deposition process using novel single-source precursors [(CH 3) 2HSiNHN(CH 3) 2 and (CH 3) 2Si[NHN(CH 3) 2] 2, which are silyl derivatives of 1,1-dimethylhydrazine. The films were characterised by X-ray photoelectron (XPS...

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Bibliographic Details
Published in:	Thin solid films Vol. 429; no. 1; pp. 144 - 151
Main Authors:	Smirnova, T.P., Badalian, A.M., Yakovkina, L.V., Kaichev, V.V., Bukhtiyarov, V.I., Shmakov, A.N., Asanov, I.P., Rachlin, V.I., Fomina, A.N.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-04-2003
Subjects:	Fourier transform infrared spectroscopy (FTIR) Plasma processing and deposition Silicon carbonitride Thin films X-Ray diffraction X-Ray photoelectron spectroscopy (XPS) Silicon carbonitride Thin films Plasma processing and deposition Fourier transform infrared spectroscopy (FTIR) X-Ray diffraction X-Ray photoelectron spectroscopy (XPS)
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Summary:	Silicon carbonitride films were synthesised in a remote plasma chemical vapour deposition process using novel single-source precursors [(CH 3) 2HSiNHN(CH 3) 2 and (CH 3) 2Si[NHN(CH 3) 2] 2, which are silyl derivatives of 1,1-dimethylhydrazine. The films were characterised by X-ray photoelectron (XPS), Fourier transform infrared (FTIR) and UV–Vis absorption spectroscopy. The microstructure of the films was examined by scanning electron microscopy and diffraction of synchrotron radiation methods. XPS and FTIR spectroscopic studies showed the SiC and SiN to be the basic bonds for the films deposited in the system with excited hydrogen, whereas the CN and SiN bonds are mainly peculiar to the films synthesised in the system with excited helium. The films were found to be predominately amorphous with a number of crystallites embedded in an unstructured matrix. The crystalline phase can be indexed in tetragonal cell with lattice parameters a=9.6 Å and c=6.4 Å. Appearance of the crystals, their dimensions and crystal forms did not depend on the substrate temperature. We hypothesised the crystallisation to be occurring either in the gas phase during deposition or in the solid as a result of the increase in mechanical stress with increasing film thickness. The FTIR and XPS data demonstrate the chemical bonding and the atomic local order in the amorphous matrix to be much more complicated than those of Si 3N 4–SiC or Si 3N 4–C 3N 4 mixtures. This novel material has an optical band gap varying within the energy range from 2.0 to 4.7 eV. The films obtained were highly resistant to thermal degradation.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0040-6090 1879-2731
DOI:	10.1016/S0040-6090(03)00408-5