Search Results - "Rabkowski, J."

Challenges Regarding Parallel Connection of SiC JFETs by Peftitsis, D., Baburske, R., Rabkowski, J., Lutz, J., Tolstoy, G., Nee, H.

“…State-of-the-art silicon carbide switches have current ratings that are not sufficiently high to be used in high-power converters. It is, therefore, necessary…”
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High-Power Modular Multilevel Converters With SiC JFETs by Peftitsis, D., Tolstoy, G., Antonopoulos, A., Rabkowski, J., Jang-Kwon Lim, Bakowski, M., Ängquist, Lennart, Nee, H.

“…This paper studies the possibility of building a modular multilevel converter (M2C) using silicon carbide (SiC) switches. The main focus is on a theoretical…”
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A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon by Rabkowski, J, Platek, T

“…This paper deals with performance of the 50 kVA three-phase converter built with switches based on SiC MOSFET and anti-parallel Schottky diodes. In contrast to…”
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Low-Loss High-Performance Base-Drive Unit for SiC BJTs by Rabkowski, J., Tolstoy, G., Peftitsis, D., Nee, H.

“…Driving a silicon carbide bipolar junction transistor is not a trivial issue, if low drive power consumption and short-switching times are desired. A…”
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Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices by Trochimiuk, P, Zdanowski, M, Rabkowski, J

“…This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power…”
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Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply by Peftitsis, D., Rabkowski, J., Nee, H-P

“…The very low on-state resistance, the voltage-controlled gate, and the relative simplicity of fabrication of the normally ON silicon carbide junction…”
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Dedicated system for design, analysis and optimization of AC-DC converters by Piasecki, S., Szmurlo, R., Rabkowski, J., Jasinski, M.

“…This paper presents an originally-developed system for design and optimization of AC-DC converters dedicated in particular to operation in distributed…”
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GaN-based soft-switched active power buffer operating at ZCS – problems of start-up and shut-down by Rąbkowski, J, Król, K, Zdanowski, M, Sochacki, M

“…This paper describes practical issues related to control of the active power buffer (APB) developed for a 2 kVA single-phase inverter. The buffer is designed…”
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Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter by Rabkowski, Jacek, Peftitsis, Dimosthenis, Nee, Hans-Peter

“…This paper describes issues related to parallel connection of SiC bipolar junction transistors (BJTs) in discrete packages. The devices are applied in a…”
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Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC Transistors by Zdanowski, Mariusz, Kostov, Konstantin, Rabkowski, Jacek, Barlik, Roman, Nee, Hans-Peter

“…The paper presents an inductor with reduced self-capacitance, designed and evaluated with fast-switching SiC transistors in dc-dc converters. A conventional…”
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Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs by Jang-Kwon Lim, Peftitsis, Dimosthenis, Rabkowski, Jacek, Bakowski, Mietek, Nee, Hans-Peter

“…Operation of parallel-connected 4H-SiC vertical junction field effect transistors (VJFETs) from SemiSouth is modeled using numerical simulations and…”
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A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors by Tolstoy, Georg, Peftitsis, Dimosthenis, Rabkowski, Jacek, Palmer, Patrick R., Nee, Hans-Peter

“…Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is…”
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Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations by Peftitsis, Dimosthenis, Rabkowski, Jacek, Nee, Hans-Peter

“…A circuit solution to the normally-ON property of the normally-ON silicon carbide junction field-effect transistor, namely the self-powered gate driver, has…”
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Challenges on drive circuit design for series-connected SiC power transistors by Peftitsis, Dimosthenis, Rabkowski, Jacek, Nee, Hans-Peter, Undeland, Tore

“…Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. The breakdown voltages of the…”
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Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors by Colmenares, Juan, Peftitsis, Dimosthenis, Rabkowski, Jacek, Sadik, Diane-Perle, Nee, Hans-Peter

“…Silicon Carbide high-power modules populated with several parallel-connected junction field-effect transistors must be driven properly. Parasitic elements…”
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Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices by Trochimiuk, P., Zdanowski, M., Rabkowski, J.

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Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5 by Rabkowski, J., Peftitsis, D., Nee, H.-P

“…This paper describes the concept, the design, the construction, and experimental investigation of a 40 kVA inverter with Silicon Carbide Junction Field Effect…”
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Output currents equalization for parallel connected three-phase PWM buck rectifiers by Rabkowski, J., Nowak, M., Matulka, J., Barlik, R.

“…The three-phase PWM buck rectifier with wide output voltage range seems to be a promising solution for renewable energy sources. When the demanded nominal…”
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A 6kW, 200kHz boost converter with parallel-connected SiC bipolar transistors by Rabkowski, J., Peftitsis, D., Zdanowski, M., Nee, H.

“…This paper describes issues related to design, construction and experimental verification of a 6 kW, 200 kHz boost converter (300 V/600 V) built with four…”
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Design of AC-DC power converters with LCL + tuned trap line filter using Si IGBT and SiC MOSFET modules by Piasecki, Szymon, Cantarellas, Antoni M., Rabkowski, Jacek, Rodriguez, Pedro

“…This paper presents a method for improving the design procedure of AC-DC power converters for power generation applications. The proposed methodology is based…”
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