Search Results - "Rabier, J"
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Low-temperature intrinsic plasticity in silicon at small scales
Published in Acta materialia (01-12-2018)“…The mechanical properties of materials usually depend on the size of the considered object. Silicon, for instance, undergoes between the macroscopic and…”
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Journal Article -
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Influence of Oxygen Concentration and Distribution on Microstructure and Superconducting Characteristics of MgB2-Based Materials and Melt-Textured YBCO
Published in IEEE transactions on applied superconductivity (01-06-2022)“…The oxygen concentration and distribution in the microstructure of MgB 2 - and YBa 2 Cu 3 O 7-δ -based materials affect the formation of nanostructural defects…”
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Journal Article -
3
High-stress plasticity and the core structures of dislocations in silicon
Published in Physica status solidi. A, Applications and materials science (01-07-2007)“…The recent observation of perfect dislocations at high stress and low temperature in silicon [J. Rabier, P. Cordier, J. L. Demenet, and H. Garem, Mater. Sci…”
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Journal Article Conference Proceeding -
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TEM observations of dislocations in plastically deformed diamond
Published in Physica status solidi. A, Applications and materials science (01-01-2013)“…Type Ib synthetic diamonds from De Beers with a low dislocation density have been deformed under confining pressure under pressure of 5 GPa in a multianvil…”
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5
Comment on “Bulk Dislocation Core Dissociation Probed by Coherent X Rays in Silicon”
Published in Physical review letters (01-11-2011)Get full text
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6
Experimental studies of mechanical properties of solid zirconium hydrides
Published in Journal of nuclear materials (01-01-2005)“…Zirconium alloy Zr–2.5Nb has been hydrided to ZrHx (x=1.15–2.0), and studied using microhardness and unconfined and confined compression techniques. At room…”
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Steffensen's inequality and L^{1}-L^{∞} estimates of weighted integrals
Published in Proceedings of the American Mathematical Society (01-02-2012)Get full text
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Plasticity of indium antimonide between −176 °C and 400 °C under hydrostatic pressure. Part II: Microscopic aspects of the deformation
Published in Acta materialia (01-02-2010)“…Indium antimonide (InSb) has been plastically deformed over a wide temperature range, from 400 down to −176 °C (see the companion paper: Kedjar B, Thilly L,…”
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Journal Article -
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On the nucleation of shuffle dislocations in Si
Published in Physica status solidi. A, Applications and materials science (01-04-2005)“…Different types of dislocation core are evidenced in silicon depending on the deformation conditions. Perfect (shuffle) dislocations are found for high applied…”
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Journal Article -
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Plasticity of indium antimonide between −176 and 400 °C under hydrostatic pressure. Part I: Macroscopic aspects of the deformation
Published in Acta materialia (01-02-2010)“…Indium antimonide (InSb) single crystals have been plastically deformed between −176 and 400 °C, i.e. below and above the brittle-to-ductile transition…”
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Journal Article -
11
Plastic deformation of Si at low temperature under high confining pressure
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (15-07-2001)“…Macroscopic plastic deformation of silicon single crystals has been achieved at RT and 150°C under a confining pressure of 5 GPa in a multi-anvil apparatus…”
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Journal Article -
12
TEM observations in Si: An attempt to link deformation microstructures and electrical activity
Published in Physica. B, Condensed matter (15-12-2009)“…The deformation microstructures of Si single crystals have been studied by transmission electron microscopy (TEM) in the temperature range of deformation where…”
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13
On a change in deformation mechanism in silicon at very high stress: new evidences
Published in Scripta materialia (03-12-2001)“…Dislocation configurations resulting from high stress low temperature deformation in silicon are found non-dissociated and elongated along different Peierls…”
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Journal Article -
14
Ehresmann Fibrations and Palais-Smale Conditions for Morphisms of Finsler Manifolds
Published in Annals of mathematics (01-11-1997)“…The central result of this paper is a generalization of the Ehrsmann fibration theorem to the infinite-dimensional and/or non-proper setting. With this aim, we…”
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15
Anatomical element localization by EDXS in Grevillea exul var. exul under nickel stress
Published in Environmental pollution (1987) (01-12-2008)“…Grevillea exul var. exul, an endemic serpentinic Proteaceae of New Caledonia, was chosen to study the spatial distribution of Ni because this species supports…”
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Journal Article -
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Low Temperature, High Stress Plastic Deformation of Semiconductors: The Silicon Case
Published in Physica status solidi. B. Basic research (01-11-2000)“…Low temperature deformation experiments of silicon under confining pressure are analyzed with reference to a possible transition at high applied stress τt…”
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17
Plastic deformation by shuffle dislocations in silicon
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (15-12-2004)“…The dislocation substructures of silicon deformed under hydrostatic pressure at room temperature in various deformation conditions have been characterized by…”
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Journal Article -
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Chapter 93 Dislocations in Silicon at High Stress
Published in Dislocations in Solids (2010)“…This chapter is devoted to the structure and properties of dislocations obtained at high stress in silicon, which have been shown to have different core…”
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Book Chapter -
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Determination of mechanical properties of parallelepiped materials embedded in solid medium and deformed under confining pressure
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (15-04-2008)“…Most hydrostatic pressure deformation techniques necessitate the use of a confining medium to apply the pressure. In the case of solid confinement, the…”
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Journal Article -
20
Undissociated screw dislocations in silicon: Calculations of core structure and energy
Published in Philosophical magazine (Abingdon, England) (01-04-2003)“…The stability of the perfect screw dislocation in silicon has been investigated using both classical potentials and first-principles calculations. Although a…”
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