Search Results - "RUBINI, S"

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  1. 1

    Multi-objective hybrid split-ring resonator and electromagnetic bandgap structure-based fractal antennas using hybrid metaheuristic framework for wireless applications by Palanisamy, SatheeshKumar, Rubini, S Saranya, Khalaf, Osamah Ibrahim, Hamam, Habib

    Published in Scientific reports (08-02-2024)
    “…Design closure and parameter optimisation are crucial in creating cutting-edge antennas. Antenna performance can be improved by fine-tuning preliminary designs…”
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    Journal Article
  2. 2

    Stopping and Resuming at Will the Growth of GaAs Nanowires by Priante, G, Ambrosini, S, Dubrovskii, V. G, Franciosi, A, Rubini, S

    Published in Crystal growth & design (04-09-2013)
    “…We report on the possibility of interrupting and resuming at will the self-assisted growth of GaAs nanowires by molecular beam epitaxy. The Ga nanoparticles…”
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    Journal Article
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    Native oxides formation and surface wettability of epitaxial III–V materials: The case of InP and GaAs by Gocalinska, A., Rubini, S., Pelucchi, E.

    Published in Applied surface science (15-10-2016)
    “…•Wettability of binary, MOVPE grown, III–V materials (GaAs, InP, InAs) was investigated as a function of age and surface treatment.•XPS study was performed, to…”
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    Journal Article
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    Long-Lived Hot Carriers in III–V Nanowires by Tedeschi, D, De Luca, M, Fonseka, H. A, Gao, Q, Mura, F, Tan, H. H, Rubini, S, Martelli, F, Jagadish, C, Capizzi, M, Polimeni, A

    Published in Nano letters (11-05-2016)
    “…Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-based devices. In particular, the rate at which charge carriers cool down…”
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    Journal Article
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    Room temperature luminescent InGaAs/GaAs core-shell nanowires by Jabeen, F., Rubini, S, Grillo, V, Felisari, L., Martelli, F.

    Published in Applied physics letters (25-08-2008)
    “…InGaAs/GaAs core-shell nanowires have been grown by molecular beam epitaxy. The core-shell nanowires show room temperature photoluminescence. At low…”
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    Journal Article
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    Description and molecular analysis of an Italian population of Centrorhynchus globo caudatus (Zeder, 1800) Lühe, 1911 (Acanthocephala: Centrorhynchidae) from Falco tinnunculus (Falconidae) and Buteo buteo (Accipitridae) by Amin, O M, Heckmann, R A, Dallarés, S, Constenla, M, Rubini, S

    Published in Journal of helminthology (01-01-2020)
    “…Centrorhynchus globocaudatus (Zeder, 1800) Lühe, 1911 (Centrorhynchidae) was reported in birds of prey. Our population from Falco tinnunculus Linnaeus…”
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    Journal Article
  8. 8

    Ultrastructure of male Centrorhynchus globocaudatus (Acanthocephala) cement apparatus and function of cement gland secretion by Sayyaf Dezfuli, B, Rubini, S, DePasquale, J A, Pironi, F

    Published in Journal of helminthology (01-01-2020)
    “…Cement glands are one of the most conspicuous and distinctive elements of taxonomic interest in male Acanthocephala. Cement glands vary in shape, number and…”
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    Journal Article
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    A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides by Pettinari, G., Gerardino, A., Businaro, L., Polimeni, A., Capizzi, M., Hopkinson, M., Rubini, S., Biccari, F., Intonti, F., Vinattieri, A., Gurioli, M., Felici, M.

    Published in Microelectronic engineering (25-04-2017)
    “…We report on a novel lithographic approach for the fabrication of integrated quantum dot (QD)-photonic crystal (PhC) nanocavity systems. We exploit unique…”
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    Journal Article
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    Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires by Ambrosini, S., Fanetti, M., Grillo, V., Franciosi, A., Rubini, S.

    Published in AIP advances (01-12-2011)
    “…We report on the morphological and structural properties of GaAs nanowires nucleated by self-catalyzed vapor-liquid-solid processes by molecular beam epitaxy…”
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    Journal Article
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    Band-gap profiling by laser writing of hydrogen-containing III-N-Vs by Balakrishnan, N., Pettinari, G., Makarovsky, O., Turyanska, L., Fay, M. W., De Luca, M., Polimeni, A., Capizzi, M., Martelli, F., Rubini, S., Patanè, A.

    “…We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those…”
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    Journal Article
  12. 12

    Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires by Piccin, M., Bais, G., Grillo, V., Jabeen, F., De Franceschi, S., Carlino, E., Lazzarino, M., Romanato, F., Businaro, L., Rubini, S., Martelli, F., Franciosi, A.

    “…We report on structural and electrical properties of GaAs nanowires (NWs) grown by molecular beam epitaxy (MBE) on GaAs and SiO 2 substrates using Au as growth…”
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    Journal Article Conference Proceeding
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    An all optical mapping of the strain field in GaAsN/GaAsN:H wires by Geddo, M., Giulotto, E., Grandi, M. S., Patrini, M., Trotta, R., Polimeni, A., Capizzi, M., Martelli, F., Rubini, S.

    Published in Applied physics letters (05-11-2012)
    “…GaAsN/GaAsN:H heterostructures were made by an in-plane selective hydrogen incorporation controlled by H-opaque metallic masks. The strain field and hydrogen…”
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    Journal Article
  14. 14

    Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular-beam epitaxy by Colli, A., Hofmann, S., Ferrari, A. C., Ducati, C., Martelli, F., Rubini, S., Cabrini, S., Franciosi, A., Robertson, J.

    Published in Applied physics letters (11-04-2005)
    “…Single-crystal ZnSe nanowires are grown on a prepatterned gold catalyst by molecular-beam epitaxy. Optimum selectivity and maximum nanowire densities are…”
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    Journal Article
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    In-Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors by Felici, M., Polimeni, A., Salviati, G., Lazzarini, L., Armani, N., Masia, F., Capizzi, M., Martelli, F., Lazzarino, M., Bais, G., Piccin, M., Rubini, S., Franciosi, A.

    Published in Advanced materials (Weinheim) (04-08-2006)
    “…In‐plane bandgap engineering of dilute nitrides by spatially delimited hydrogen irradiation (left, microphotoluminescence image of GaAsN) or displacement…”
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    Journal Article
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    Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures by Frabboni, S., Grillo, V., Gazzadi, G. C., Balboni, R., Trotta, R., Polimeni, A., Capizzi, M., Martelli, F., Rubini, S., Guzzinati, G., Glas, F.

    Published in Applied physics letters (10-09-2012)
    “…Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of…”
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    Journal Article
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    Imaging with low-voltage scanning transmission electron microscopy: A quantitative analysis by Felisari, L., Grillo, V., Jabeen, F., Rubini, S., Menozzi, C., Rossi, F., Martelli, F.

    Published in Ultramicroscopy (01-07-2011)
    “…A dedicated specimen holder has been designed to perform low-voltage scanning transmission electron microscopy in dark field mode. Different test samples,…”
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    Journal Article
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    High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides by Bisognin, G., De Salvador, D., Napolitani, E., Berti, M., Polimeni, A., Capizzi, M., Rubini, S., Martelli, F., Franciosi, A.

    Published in Journal of applied crystallography (01-04-2008)
    “…In this work it is demonstrated how in situ high‐resolution X‐ray diffraction (HRXRD), performed during thermal annealing and employing a conventional…”
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    Journal Article
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