Search Results - "ROULSTON, D. J"

Early voltage in very-narrow-base bipolar transistors by Roulston, D.J.

“…It is shown that for VLSI devices with very narrow base widths (less than 0.1 mu m), the velocity saturation effect gives a substantial increase in Early…”
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Numerical and analytical calculation of collector buried layer resistance in a bipolar transistor by Sadovnikov, A.D, Roulston, D.J, Celi, D

“…Collector resistance is vital parameter of bipolar transistors which influences their static and high-frequency properties. One of the major components of the…”
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Trade-off between emitter resistance and current gain in polysilicon emitter bipolar transistors with intentionally grown interfacial oxide layers by Hamel, J.S., Roulston, D.J., Selvakumar, C.R.

“…Experimental measurements of emitter resistance and current gain in polysilicon emitter bipolar transistors that have received annealing to break up an…”
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Comparison of the optimum base width for ECL propagation delay and maximum oscillation frequency by Vaidyanathan, M., Roulston, D.J.

“…The condition for minimum ECL propagation delay time, as the device base width is varied, is obtained in terms of the transistor delay times. This condition is…”
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VBIC95, the vertical bipolar inter-company model by McAndrew, C.C., Seitchik, J.A., Bowers, D.F., Dunn, M., Foisy, M., Getreu, I., McSwain, M., Moinian, S., Parker, J., Roulston, D.J., Schroter, M., van Wijnen, P., Wagner, L.F.

“…This paper details the VBIC95 bipolar junction transistor (BJT) model. The model was developed as an industry standard replacement for the SPICE Gummel-Poon…”
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Collector design tradeoffs for low voltage applications of advanced bipolar transistors by Kumar, M.J., Sadovnikov, A.D., Roulston, D.J.

“…The values of BV/sub ceo/ are computed for transistors with highly doped collectors and with thin reach-through collectors, using various sets of ionization…”
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The perforated emitter contact effect by Hamel, J.S., Roulston, D.J., Selvakumar, C.R.

“…A new phenomenon, the perforated emitter contact effect, is described. It arises when numerous extremely small gaps or perforations are introduced to an…”
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Output conductance of bipolar transistors with large neutral-base recombination current by McGregor, J.M., Roulston, D.J., Noel, J.-P., Houghton, D.C.

“…Neutral base recombination current, which is negligible in most modern bipolar transistors, can affect the common-emitter output conductance quite dramatically…”
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Design study of AlGaAs/GaAs HBTs by Gao, G.-B., Roulston, D.J., Morkoc, H.

“…The frequency performance of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) having different layouts, doping profiles, and layer thicknesses was…”
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Diffusion length determination in p - n junction diodes and solar cells by Arora, N. D., Chamberlain, S. G., Roulston, D. J.

“…An experimental technique for determining the minority carrier diffusion length in the base region of Si p-n junction diodes and solar cells is described. The…”
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Transistor design for predictable power gain at maximum frequency by McGregor, J.M., Roulston, D.J.

“…Equations which define the neutral base width, collector doping, and epitaxial collector thickness of a bipolar transistor giving a specified unilateral power…”
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A new model for bipolar transistors at high current by Gu, R.X., Elmasry, M.I., Roulston, D.J.

“…A model for current gain and cutoff frequency falloff at high currents for bipolar transistors is proposed. The model is based on considering that the vertical…”
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Partitioned-charge-based BJT model using transient charge control relations for arbitrary doping and bias conditions by Parker, J.R., Roulston, D.J., Hamel, J.S.

“…Recent transient charge control (TCC) relations such as the TICC or more general GTCC are applied to accurate calculation of base charge partitioning for…”
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Modeling of narrow-base bipolar transistors including variable-base-charge and avalanche effects by Hebert, F., Roulston, D.J.

“…A bipolar transistor model, compatible with circuit analysis programs, that can model base punchthrough and avalanche breakdown conditions, is presented. The…”
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Drift hole mobility in strained and unstrained doped Si1-xGex alloys by TANJINDER MANKU, MCGREGOR, J. M, NATHAN, A, ROULSTON, D. J, NOEL, J.-P, HOUGHTON, D. C

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Compensation of bipolar monolithic circuits using the parasitic capacitance of diffused resistors by Hebert, F., Roulston, D.J.

“…A method of compensating bipolar integrated circuits which uses the parasitic capacitance of diffused resistors is studied. The advantages over other methods…”
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Electron and hole mobilities in silicon as a function of concentration and temperature by Arora, N.D., Hauser, J.R., Roulston, D.J.

“…An analytical expression has been derived for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of…”
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Quasi-three-dimensional modeling of bipolar transistor characteristics by Sadovnikov, A., Roulston, D.J.

“…A new approach to modeling the characteristics of a real three-dimensional bipolar transistor (BJT) is presented. It is based on the joint use of the BIPOLE…”
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Modeling of emitter-base bulk and peripheral space-charge-layer recombination currents in bipolar transistors by Chamberlain, N.G., Roulston, D.J.

“…The bulk and surface recombination currents of the E-B space-charge layer are related through a factor X FS having the dimensions of length. The factor X FS…”
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Measured in-plane hole drift and Hall mobility in heavily-doped strained p-type Si1-xGex by MCGREGOR, J. M, MANKU, T, NOËL, J.-P, ROULSTON, D. J, NATHAN, A, HOUGHTON, D. C

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