Search Results - "ROSENAUER, A"
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Atom counting in HAADF STEM using a statistical model-based approach: Methodology, possibilities, and inherent limitations
Published in Ultramicroscopy (01-11-2013)“…In the present paper, a statistical model-based method to count the number of atoms of monotype crystalline nanostructures from high resolution high-angle…”
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2
Quantitative composition determination at the atomic level using model-based high-angle annular dark field scanning transmission electron microscopy
Published in Ultramicroscopy (01-02-2014)“…High angle annular dark field scanning transmission electron microscopy (HAADF STEM) images provide sample information which is sensitive to the chemical…”
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3
Procedure to count atoms with trustworthy single-atom sensitivity
Published in Physical review. B, Condensed matter and materials physics (19-02-2013)“…We report a method to reliably count the number of atoms from high-angle annular dark field scanning transmission electron microscopy images. A model-based…”
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4
Determining oxygen relaxations at an interface: A comparative study between transmission electron microscopy techniques
Published in Ultramicroscopy (01-10-2017)“…•We report a quantitative comparison between TEM techniques.•Statistical parameter estimation theory is used to measure column positions.•Light and heavy…”
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5
Correction of non-linear thickness effects in HAADF STEM electron tomography
Published in Ultramicroscopy (01-05-2012)“…In materials science, high angle annular dark field scanning transmission electron microscopy is often used for tomography at the nanometer scale. In this…”
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6
Optimal experimental design for the detection of light atoms from high-resolution scanning transmission electron microscopy images
Published in Applied physics letters (11-08-2014)“…We report an innovative method to explore the optimal experimental settings to detect light atoms from scanning transmission electron microscopy (STEM) images…”
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7
Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface
Published in APL materials (01-09-2024)“…We investigate the composition of α-phase intermediate layers at epitaxial Ga2O3/Al2O3 interfaces using high angle annular dark field scanning transmission…”
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8
The effect of probe inaccuracies on the quantitative model-based analysis of high angle annular dark field scanning transmission electron microscopy images
Published in Micron (Oxford, England : 1993) (01-08-2014)“…•We explore how uncertainties in the probe profile affect the estimation of total scattered intensities when using a model-based approach for quantification of…”
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9
Atomic resolution elemental mapping using energy-filtered imaging scanning transmission electron microscopy with chromatic aberration correction
Published in Ultramicroscopy (01-10-2017)“…•This paper addresses a novel approach to atomic resolution elemental mapping.•Approach is immune to spatial incoherence in the electron source.•Also immune to…”
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10
Investigation of composition and origin of the intermediate layers at the Ga2O3/AlN and Ga2O3/Al2O3 interfaces
Published in BIO web of conferences (2024)Get full text
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11
How precise can atoms of a nanocluster be located in 3D using a tilt series of scanning transmission electron microscopy images?
Published in Ultramicroscopy (01-10-2017)“…In this paper, we investigate how precise atoms of a small nanocluster can ultimately be located in three dimensions (3D) from a tilt series of images acquired…”
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12
Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography
Published in Applied physics letters (01-04-2013)“…A method for determining concentrations from high-angle annular dark field-scanning transmission electron microscopy images is presented. The method is applied…”
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13
Decomposition of 8.5 mol.% Y2O3-doped zirconia and its contribution to the degradation of ionic conductivity
Published in Acta materialia (01-10-2009)Get full text
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14
Computation and parametrization of the temperature dependence of Debye-Waller factors for group IV, III-V and II-VI semiconductors
Published in Acta crystallographica. Section A, Foundations of crystallography (01-01-2009)“…We calculated the temperature dependence of the Debye–Waller factors for a variety of group IV, III–V and II–VI semiconductors from 0.1 to 1000 K. The approach…”
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15
Locating light and heavy atomic column positions with picometer precision using ISTEM
Published in Ultramicroscopy (01-01-2017)“…Recently, imaging scanning transmission electron microscopy (ISTEM) has been proposed as a promising new technique combining the advantages of conventional TEM…”
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16
Localization and functional characterization of the human NKCC2 isoforms
Published in Acta Physiologica (01-07-2010)“…Salt reabsorption across the apical membrane of cells in the thick ascending limb (TAL) of Henle is primarily mediated by the bumetanide-sensitive Na⁺/K⁺/2Cl⁻…”
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17
The influence of the quantum‐confined Stark effect on InGaN/AlGaN quantum dots
Published in physica status solidi (b) (01-05-2017)“…We report on micro‐photoluminescence studies on InGaN/ AlGaN quantum dots grown by metal‐organic vapor phase epitaxy. The excitonic emission lines can be…”
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18
A memory efficient method for fully three-dimensional object reconstruction with HAADF STEM
Published in Ultramicroscopy (01-06-2014)“…The conventional approach to object reconstruction through electron tomography is to reduce the three-dimensional problem to a series of independent…”
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19
Coherently Embedded Ag Nanostructures in Si: 3D Imaging and their application to SERS
Published in Scientific reports (10-04-2014)“…Surface enhanced Raman spectroscopy (SERS) has been established as a powerful tool to detect very low-concentration bio-molecules. One of the challenging…”
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20
Determination of the mean inner potential in III–V semiconductors, Si and Ge by density functional theory and electron holography
Published in Ultramicroscopy (2006)“…The mean inner potentials of various III–V semiconductors, Si and Ge have been calculated by density functional theory methods. For that purpose, the Coulomb…”
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