In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces

In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces

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Bibliographic Details
Published in:Applied physics letters Vol. 54; no. 21; pp. 2088 - 2090
Main Authors: DREVILLON, B, SATYENDRA KUMAR, ROCI I CABARROCAS, P, SIEFERT, J. M
Format: Journal Article
Language:English
Japanese
Published: Melville, NY American Institute of Physics 22-05-1989
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
Indium Oxides
Tin Oxides
Tin
Zinc Oxides
Amorphous state
Experimental study
Interface
Schottky barrier
Inorganic compound
Ellipsometry
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Description
ISSN:0003-6951
1077-3118
DOI:10.1063/1.101511