Effect of thermal annealing on structural and electrical properties of tio2 thin films
•TiO2 thin film was deposited on Si(100) using radio frequency magnetron sputtering.•Upon annealing amorphous TiO2 transforms into anatase polycrystalline thin film.•Surface and interface current-voltage measurements have been done.•Annealed specimen shows a reduced current response. TiO2 is a wide...
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| Published in: | Thin solid films Vol. 710; p. 138262 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Elsevier B.V
30-09-2020
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| Subjects: | |
| Online Access: | Get full text |
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| Summary: | •TiO2 thin film was deposited on Si(100) using radio frequency magnetron sputtering.•Upon annealing amorphous TiO2 transforms into anatase polycrystalline thin film.•Surface and interface current-voltage measurements have been done.•Annealed specimen shows a reduced current response.
TiO2 is a wide band gap semiconducting material which is known to have good photocatalytic properties. The orientational relationship between the thin film and the substrate plays an important role in transferring the photo generated electrons. Here, we have deposited TiO2 thin films at room temperature on clean Si(100) substrates using radio frequency magnetron sputtering technique. Surface morphology and quality of the thin film have been studied using scanning electron microscopy, Raman spectroscopy and X-ray diffractometry techniques. Structural changes due to annealing has been investigated by analyzing the specimen before and after annealing using cross section transmission electron microscopy technique. Electrical measurements have been performed on the surface as well as across the interface using a two-probe measurement system. |
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| ISSN: | 0040-6090 1879-2731 |
| DOI: | 10.1016/j.tsf.2020.138262 |