Search Results - "RISTIC, Goran S"

Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm by Ristic, Goran S., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Jakšić, Aleksandar B.

“…We investigated the influence of gamma radiation of 50 Gy(H2O) on radiation-sensitive p-channel metal-oxide-semiconductor field-effect transistors with an Al…”
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Fading of pMOS dosimeters over a long period of time by Ristić, Goran S., Andjelković, Marko S., Duane, Russell, Jakšić, Aleksandar B.

“…The fading of radiation‐sensitive p‐channel metal‐oxide‐semiconductor field‐effect transistors (known as RADFETs or pMOS dosimeters) over a long time period of…”
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The isochronal annealing of irradiated n-channel power VDMOSFETs by Ristic, Goran S, Andjelkovic, Marko, Savovic, Svetislav

“…The threshold voltage, VT, as well as threshold voltage shift, ΔVT, and its components, the component of threshold voltage shift due to radiation-induced fixed…”
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The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses by Ristić, Goran S., Andjelković, Marko, Jakšić, Aleksandar B.

“…The behavior of radiation-induced fixed traps (FTs) in gate oxide and radiation-induced switching traps (STs) near and at the gate oxide/substrate interface…”
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A new microcontroller-based RADFET dosimeter reader by VASOVIC, Nikola D, RISTIC, Goran S

“…A new reader for radiation dose measurements using RADFET (pMOSFET) dosemeters has been developed. The threshold voltage (VT) of the pMOSFETs is measured using…”
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Experimental investigations of commercial gas discharge tube “Osram St 111” using time lag measuring method by Maluckov, Čedomir A., Radović, Miodrag K., Ristić, Goran S.

“…The results of the breakdown time lags obtained by commercial “OSRAM St 111” gas diode are presented. The memory curves for different voltages (for 220, 250…”
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Feasibility study of a current mode gamma radiation dosimeter based on a commercial pin photodiode and a custom made auto-ranging electrometer by Andjelkovic, Marko, Ristic, Goran

“…An experimental study has been conducted to evaluate the feasibility of a current mode gamma radiation dosimeter, consisting of a commercial PIN photodiode as…”
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Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch by Andjelkovic, Marko S, Petrovic, Vladimir, Stamenkovic, Zoran, Ristic, Goran S, Jovanovic, Goran S

“…The circuit-level simulation analysis of the single event transient response of an on-chip single event latchup protection switch (SPS cell), previously…”
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A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs by Vasovic, Nikola D, Ristic, Goran S

“…► The paper describes the switching system. ► The system is based on a low cost commercially available microcontroller. ► It enables the successive applying of…”
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Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress by RISTIC, Goran S, PEJOVIC, Momcilo M, JAKSIC, Aleksandar B

“…A complete study of the defects created in the gate oxide and at the gate oxide/substrate interface of metal–oxide–semiconductor transistors with thick gate…”
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Recharging process of commercial floating-gate MOS transistor in dosimetry application by Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Sarajlić, Milija, Stanković, Srboljub, Ristić, Goran S.

“…We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the…”
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Current mode response of phototransistors to gamma radiation by Andjelković, Marko S., Ristić, Goran S.

“…This paper investigates the current mode response of four commercial NPN phototransistors under gamma radiation exposure from Co-60 source, with the aim to…”
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Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing by RISTIC, Goran S, PEJOVIC, Momcilo M, JAKSIC, Aleksandar B

“…The results of positive/negative Fowler–Nordheim high electric field stress and thermal post-high electric field stress annealing of commercial n-channel power…”
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The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si) by Ristić, Goran S., Vasović, Nikola D., Kovačević, Milojko, Jakšić, Aleksandar B.

“…The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from 60Co gamma-ray source to dose of 230 Gy(Si) without gate bias, and their…”
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Gamma and UV radiation effects on breakdown voltage of neon-filled tube by Pejovic, Milic M., Pejovic, Momcilo M., Ristic, Goran S.

“…This paper presents the experimental data of breakdown voltage as a function of afterglow period and voltage increase rate for neon-filled tube at pressure of…”
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Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs by RISTIC, Goran S, PEJOVIC, Momcilo M, JAKSIC, Aleksandar B

“…The behavior of the defects created in the gate oxide and at the Si/SiO 2 interface of n-channel power vertical double-diffused metal-oxide-semiconductor…”
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Sensitivity and fading of irradiated RADFETs with different gate voltages by Ristic, Goran S., Ilic, Stefan D., Andjelkovic, Marko S., Duane, Russell, Palma, Alberto J., Lalena, Antonio M., Krstic, Milos D., Jaksic, Aleksandar B.

“…The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without…”
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The application of time delay method for analysis of processes which initiate electrical breakdown in 1.3 mbar nitrogen by Pejovic, M.M., Karamarkovic, J.P., Ristic, G.S.

“…The contributions of ions and neutral active states to secondary electron emission in the afterglow has been analyzed of the time delay method. The…”
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Radiation sensitive MOSFETs irradiated with various positive gate biases by Ristic, Goran S., Ilic, Stefan D., Duane, Russell, Andjelkovic, Marko S., Palma, Alberto J., Lallena, Antonio M., Krstic, Milos D., Stankovic, Srboljub J., Jaksic, Aleksandar B.

“…The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The…”
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The sensitivity of 100<ce:hsp sp="0.25"/>nm RADFETs with zero gate bias up to dose of 230<ce:hsp sp="0.25"/>Gy(Si) by Ristic, Goran S, Vasovic, Nikola D, Kovacevic, Milojko, Jaksic, Aleksandar B

“…The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from 60Co gamma-ray source to dose of 230Gy(Si) without gate bias, and their…”
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