Search Results - "RHIGER, David R"
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Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe
Published in Journal of electronic materials (01-08-2011)“…The InAs/GaSb family of type II superlattices (T2SL) is the only known infrared (IR) detector material having a theoretically predicted higher performance than…”
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Journal Article Conference Proceeding -
2
Current-Voltage Analysis of Dual-Band n-p-n HgCdTe Detectors
Published in Journal of electronic materials (01-09-2022)“…We report an analysis of the current-voltage characteristics of a dual-band HgCdTe infrared detector built in an n-p-n configuration and designed for…”
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Journal Article -
3
Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors
Published in Journal of electronic materials (01-10-2019)“…Mid-wavelength infrared detectors have been fabricated in the nBn configuration using the InAs/InAsSb superlattice as the absorber. Possible impediments in the…”
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Journal Article -
4
Analysis of III–V Superlattice nBn Device Characteristics
Published in Journal of electronic materials (01-09-2016)“…Mid-wavelength infrared n B n detectors built with III–V superlattice materials have been tested by means of both capacitance and direct-current methods. By…”
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Journal Article -
5
Characterization of LWIR diodes on InAs/GaSb Type-II superlattice material
Published in Infrared physics & technology (01-11-2009)“…Long wavelength infrared (LWIR) focal plane arrays (FPAs) built on Type-II strained layer InAs/GaSb superlattice materials are emerging as an alternative to…”
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Journal Article Conference Proceeding -
6
Use of ellipsometry to characterize the surface of HgCdTe
Published in Journal of electronic materials (01-08-1993)“…Author reviews applications of ellipsometry to HgCdTe and related materials. Methods and limitations of the analysis of nonabsorbing and absorbing single films…”
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Conference Proceeding Journal Article -
7
Low-energy electron-enhanced etching of HgCdTe
Published in Journal of electronic materials (01-07-2003)“…Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are…”
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Conference Proceeding Journal Article -
8
Strain relief in epitaxial HgCdTe by growth on a reticulated substrate
Published in Journal of electronic materials (01-06-2000)“…In nearly all cases when an epitaxial layer of HgCdTe is grown on a CdZnTe substrate, there will be a finite lattice mismatch due to the lack of precise…”
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Journal Article -
9
Extraction of mobile impurities from CdZnTe
Published in Journal of electronic materials (01-06-2000)“…To develop a process for removing impurities from the CdZnTe substrate, we have carried out experiments using a molten salt, KCN (potassium cyanide), for…”
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Journal Article -
10
Investigation of the cross-hatch pattern and localized defects in epitaxial HgCdTe
Published in Journal of electronic materials (01-06-1998)Get full text
Journal Article -
11
CdZnTe substrate producibility and its impact on IRFPA yield
Published in Journal of electronic materials (01-06-1999)“…The need for cost effective production of HgCdTe infrared detectors and focal plane assemblies has led to increased attention to the availability of high…”
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Journal Article -
12
Lattice mismatch induced morphological features and strain in HgCdTe epilayers on CdZnTe substrates
Published in Journal of electronic materials (01-06-1997)Get full text
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13
Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall
Published in Applied physics letters (01-09-2008)“…We have analyzed by electron microscopy techniques the effect of the deposition of a SiO2 passivation layer on an InAs/GaSb type-II superlattice (SL) mesa with…”
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Journal Article -
14
Atomic scale analysis of the effect of the SiO 2 passivation treatmenton InAs/GaSb superlattice mesa sidewall
Published in Applied physics letters (03-09-2008)“…We have analyzed by electron microscopy techniques the effect of the deposition of a SiO 2 passivation layer on an InAs/GaSb type-II superlattice (SL) mesa…”
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15
Solid‐state quaternary phase equilibrium diagram for the Hg–Cd–Te–O system
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-1983)“…For the Hg–Cd–Te–O system an approximate three‐dimensional diagram of quaternary phase equilibrium at room temperature has been constructed for the first time,…”
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16
Evidence for Antiferromagnetism in Invar at High Pressures
Published in Physical review letters (01-01-1972)Get full text
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