Search Results - "RHIGER, David R"

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  1. 1

    Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe by Rhiger, David R.

    Published in Journal of electronic materials (01-08-2011)
    “…The InAs/GaSb family of type II superlattices (T2SL) is the only known infrared (IR) detector material having a theoretically predicted higher performance than…”
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    Journal Article Conference Proceeding
  2. 2

    Current-Voltage Analysis of Dual-Band n-p-n HgCdTe Detectors by Rhiger, David R., Bangs, James W.

    Published in Journal of electronic materials (01-09-2022)
    “…We report an analysis of the current-voltage characteristics of a dual-band HgCdTe infrared detector built in an n-p-n configuration and designed for…”
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    Journal Article
  3. 3

    Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors by Rhiger, David R., Smith, Edward P.

    Published in Journal of electronic materials (01-10-2019)
    “…Mid-wavelength infrared detectors have been fabricated in the nBn configuration using the InAs/InAsSb superlattice as the absorber. Possible impediments in the…”
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    Journal Article
  4. 4

    Analysis of III–V Superlattice nBn Device Characteristics by Rhiger, David R., Smith, Edward P., Kolasa, Borys P., Kim, Jin K., Klem, John F., Hawkins, Samuel D.

    Published in Journal of electronic materials (01-09-2016)
    “…Mid-wavelength infrared n B n detectors built with III–V superlattice materials have been tested by means of both capacitance and direct-current methods. By…”
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    Journal Article
  5. 5

    Characterization of LWIR diodes on InAs/GaSb Type-II superlattice material by Rhiger, David R., Kvaas, Robert E., Harris, Sean F., Hill, Cory J.

    Published in Infrared physics & technology (01-11-2009)
    “…Long wavelength infrared (LWIR) focal plane arrays (FPAs) built on Type-II strained layer InAs/GaSb superlattice materials are emerging as an alternative to…”
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    Journal Article Conference Proceeding
  6. 6

    Use of ellipsometry to characterize the surface of HgCdTe by RHIGER, D. R

    Published in Journal of electronic materials (01-08-1993)
    “…Author reviews applications of ellipsometry to HgCdTe and related materials. Methods and limitations of the analysis of nonabsorbing and absorbing single films…”
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    Conference Proceeding Journal Article
  7. 7

    Low-energy electron-enhanced etching of HgCdTe by JAEHWA KIM, KOGA, T. S, GILLIS, H. P, GOORSKY, Mark S, GARWOOD, Gerald A, VARESI, John B, RHIGER, David R, JOHNSON, Scott M

    Published in Journal of electronic materials (01-07-2003)
    “…Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are…”
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    Conference Proceeding Journal Article
  8. 8

    Strain relief in epitaxial HgCdTe by growth on a reticulated substrate by Rhiger, David R, Sen, Sanghamitra, Gordon, Eli E

    Published in Journal of electronic materials (01-06-2000)
    “…In nearly all cases when an epitaxial layer of HgCdTe is grown on a CdZnTe substrate, there will be a finite lattice mismatch due to the lack of precise…”
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    Journal Article
  9. 9

    Extraction of mobile impurities from CdZnTe by Sen, Sanghamitra, Rhiger, David R, Curtis, Charles R, Norton, Paul R

    Published in Journal of electronic materials (01-06-2000)
    “…To develop a process for removing impurities from the CdZnTe substrate, we have carried out experiments using a molten salt, KCN (potassium cyanide), for…”
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    Journal Article
  10. 10
  11. 11

    CdZnTe substrate producibility and its impact on IRFPA yield by Sen, Sanghamitra, Hettich, Herbert L., Rhiger, David R., Price, Stephen L., Currie, Malcolm C., Ginn, Robert P., McLean, Eugene O.

    Published in Journal of electronic materials (01-06-1999)
    “…The need for cost effective production of HgCdTe infrared detectors and focal plane assemblies has led to increased attention to the availability of high…”
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    Journal Article
  12. 12
  13. 13

    Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall by Herrera, M., Chi, M., Bonds, M., Browning, N. D., Woolman, Joseph N., Kvaas, Robert E., Harris, Sean F., Rhiger, David R., Hill, Cory J.

    Published in Applied physics letters (01-09-2008)
    “…We have analyzed by electron microscopy techniques the effect of the deposition of a SiO2 passivation layer on an InAs/GaSb type-II superlattice (SL) mesa with…”
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    Journal Article
  14. 14

    Atomic scale analysis of the effect of the SiO 2 passivation treatmenton InAs/GaSb superlattice mesa sidewall by Herrera, M., Chi, M., Bonds, M., Browning, N. D., Woolman, Joseph N., Kvaas, Robert E., Harris, Sean F., Rhiger, David R., Hill, Cory J.

    Published in Applied physics letters (03-09-2008)
    “…We have analyzed by electron microscopy techniques the effect of the deposition of a SiO 2 passivation layer on an InAs/GaSb type-II superlattice (SL) mesa…”
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    Journal Article
  15. 15

    Solid‐state quaternary phase equilibrium diagram for the Hg–Cd–Te–O system by Rhiger, David R., Kvaas, Robert E.

    “…For the Hg–Cd–Te–O system an approximate three‐dimensional diagram of quaternary phase equilibrium at room temperature has been constructed for the first time,…”
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    Journal Article
  16. 16