Search Results - "RHIGER, D. R"

Refine Results
  1. 1

    High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays by Vilela, M. F., Olsson, K. R., Norton, E. M., Peterson, J. M., Rybnicek, K., Rhiger, D. R., Fulk, C. W., Bangs, J. W., Lofgreen, D. D., Johnson, S. M.

    Published in Journal of electronic materials (01-11-2013)
    “…Mercury cadmium telluride (HgCdTe) grown on large-area silicon (Si) substrates allows for larger array formats and potentially reduced focal-plane array (FPA)…”
    Get full text
    Journal Article Conference Proceeding
  2. 2

    Electron Transport in InAsSb-Based nBn Photodetector Structures by Umana-Membreno, G. A., Klein, B., Smith, E. P. G., Antoszewski, J., Plis, E., Johnson, S. M., Krishna, S., Rhiger, D. R., Faraone, L.

    Published in IEEE transactions on electron devices (01-01-2013)
    “…Magnetic-field-dependent Hall-effect measurements and high-resolution mobility spectrum analysis have been employed to determine electronic transport…”
    Get full text
    Journal Article
  3. 3

    Infrared absorption behavior in CdZnTe substrates by SEN, S, RHIGER, D. R, CURTIS, C. R, KALISHER, M. H, HETTICH, H. L, CURRIE, M. C

    Published in Journal of electronic materials (01-06-2001)
    “…Infrared (IR) optical transmission measurements of polished CdZnTe wafers can provide useful information about excess impurities, stoichiometry, and…”
    Get full text
    Conference Proceeding Journal Article
  4. 4

    Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon by MICLAUS, C, MALOUF, G, JOHNSON, S. M, RHIGER, D. R, GOORSKY, M. S

    Published in Journal of electronic materials (01-06-2004)
    “…We have successfully bonded (211) cadmium zinc telluride (CZT) substrates onto (001) Si substrates for subsequent epitaxial-layer deposition of mercury cadmium…”
    Get full text
    Conference Proceeding Journal Article
  5. 5

    Critical thickness in the HgCdTe/CdZnTe system by Berding, M A, Nix, W D, Rhiger, D R, Sen, S, Sher, A

    Published in Journal of electronic materials (01-06-2000)
    “…The critical thickness of HgCdTe films on CdZnTe substrates shows that a very tight control of the substrate composition is needed to produce dislocation-free…”
    Get full text
    Journal Article
  6. 6

    Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality by Sen, S, Liang, C S, Rhiger, D R, Stannard, J E, Arlinghaus, H F

    Published in Journal of electronic materials (01-08-1996)
    “…We have conducted annealing experiments on CdZnTe wafers to restore stoichiometry, eliminate or reduce second-phase (Cd or Te) inclusions, and investigate…”
    Get full text
    Journal Article
  7. 7

    High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice by Gautam, Nutan, Myers, S., Barve, A. V., Klein, Brianna, Smith, E. P., Rhiger, D. R., Dawson, L. R., Krishna, S.

    Published in Applied physics letters (09-07-2012)
    “…We report on an interband cascade mid-wave infrared (MWIR) detector based on type-II InAs/GaSb/AlSb strained layer superlattices (T2SL). The reported device…”
    Get full text
    Journal Article
  8. 8

    HgCdTe/CdZnTe P-I-N high-energy photon detectors by Hamilton, W J, Rhiger, D R, Sen, S, Kalisher, M H

    Published in Journal of electronic materials (01-08-1996)
    “…Classical solid-state detection of x-ray and gamma-ray radiation consists of a high voltage applied between two metallic contacts sandwiching a high…”
    Get full text
    Journal Article
  9. 9

    Very high resolution detection of gamma radiation at room-temperature using p-i-n detectors of CdZnTe and HgCdTe by Hamilton, W.J., Rhiger, D.R., Sen, S., Kalisher, M.H., James, K., Reid, C.P., Gerrish, V., Baccash, C.O.

    “…High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The…”
    Get full text
    Journal Article Conference Proceeding
  10. 10

    Effect of dislocations on the electrical and optical properties of long‐wavelength infrared HgCdTe photovoltaic detectors by Johnson, S. M., Rhiger, D. R., Rosbeck, J. P., Peterson, J. M., Taylor, S. M., Boyd, M. E.

    “…The quantitative effects of dislocations on the electrical and optical properties of long‐wavelength infrared (LWIR) HgCdTe photovoltaic detectors was…”
    Get full text
    Conference Proceeding Journal Article
  11. 11

    Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices by Gautam, N., Myers, S., Barve, A. V., Klein, B., Smith, E. P., Rhiger, D. R., Ha Sul Kim, Zhao-Bing Tian, Krishna, S.

    Published in IEEE journal of quantum electronics (01-02-2013)
    “…We present the design, growth, fabrication, and characterization of unipolar barrier photodiodes, pBiBn, based on type-II InAs/GaSb superlattice for midwave…”
    Get full text
    Journal Article
  12. 12

    Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe by Rhiger, David R.

    Published in Journal of electronic materials (01-08-2011)
    “…The InAs/GaSb family of type II superlattices (T2SL) is the only known infrared (IR) detector material having a theoretically predicted higher performance than…”
    Get full text
    Journal Article Conference Proceeding
  13. 13

    Low-energy electron-enhanced etching of HgCdTe by JAEHWA KIM, KOGA, T. S, GILLIS, H. P, GOORSKY, Mark S, GARWOOD, Gerald A, VARESI, John B, RHIGER, David R, JOHNSON, Scott M

    Published in Journal of electronic materials (01-07-2003)
    “…Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are…”
    Get full text
    Conference Proceeding Journal Article
  14. 14

    Strain relief in epitaxial HgCdTe by growth on a reticulated substrate by Rhiger, David R, Sen, Sanghamitra, Gordon, Eli E

    Published in Journal of electronic materials (01-06-2000)
    “…In nearly all cases when an epitaxial layer of HgCdTe is grown on a CdZnTe substrate, there will be a finite lattice mismatch due to the lack of precise…”
    Get full text
    Journal Article
  15. 15

    Extraction of mobile impurities from CdZnTe by Sen, Sanghamitra, Rhiger, David R, Curtis, Charles R, Norton, Paul R

    Published in Journal of electronic materials (01-06-2000)
    “…To develop a process for removing impurities from the CdZnTe substrate, we have carried out experiments using a molten salt, KCN (potassium cyanide), for…”
    Get full text
    Journal Article
  16. 16
  17. 17

    Use of ellipsometry to characterize the surface of HgCdTe by RHIGER, D. R

    Published in Journal of electronic materials (01-08-1993)
    “…Author reviews applications of ellipsometry to HgCdTe and related materials. Methods and limitations of the analysis of nonabsorbing and absorbing single films…”
    Get full text
    Conference Proceeding Journal Article
  18. 18

    CdZnTe substrate producibility and its impact on IRFPA yield by Sen, Sanghamitra, Hettich, Herbert L., Rhiger, David R., Price, Stephen L., Currie, Malcolm C., Ginn, Robert P., McLean, Eugene O.

    Published in Journal of electronic materials (01-06-1999)
    “…The need for cost effective production of HgCdTe infrared detectors and focal plane assemblies has led to increased attention to the availability of high…”
    Get full text
    Journal Article
  19. 19

    Surface characterization of Hg0.7Cd0.3Te native oxides by Wager, J. F., Rhiger, D. R.

    “…Ultraviolet photoelectron spectroscopy (UPS), x‐ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (ELS) were used to characterize the…”
    Get full text
    Journal Article
  20. 20

    Wafer Bonding of (211) Cd^sub 0.96^Zn^sub 0.04^Te on (001) Silicon by Miclaus, C, Malouf, G, Johnson, S M, Rhiger, D R, Goorsky, M S

    Published in Journal of electronic materials (01-06-2004)
    “…We have successfully bonded (211) cadmium zinc telluride (CZT) substrates onto (001) Si substrates for subsequent epitaxial-layer deposition of mercury cadmium…”
    Get full text
    Journal Article