Search Results - "RHIGER, D. R"
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High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays
Published in Journal of electronic materials (01-11-2013)“…Mercury cadmium telluride (HgCdTe) grown on large-area silicon (Si) substrates allows for larger array formats and potentially reduced focal-plane array (FPA)…”
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Journal Article Conference Proceeding -
2
Electron Transport in InAsSb-Based nBn Photodetector Structures
Published in IEEE transactions on electron devices (01-01-2013)“…Magnetic-field-dependent Hall-effect measurements and high-resolution mobility spectrum analysis have been employed to determine electronic transport…”
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3
Infrared absorption behavior in CdZnTe substrates
Published in Journal of electronic materials (01-06-2001)“…Infrared (IR) optical transmission measurements of polished CdZnTe wafers can provide useful information about excess impurities, stoichiometry, and…”
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Conference Proceeding Journal Article -
4
Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon
Published in Journal of electronic materials (01-06-2004)“…We have successfully bonded (211) cadmium zinc telluride (CZT) substrates onto (001) Si substrates for subsequent epitaxial-layer deposition of mercury cadmium…”
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Conference Proceeding Journal Article -
5
Critical thickness in the HgCdTe/CdZnTe system
Published in Journal of electronic materials (01-06-2000)“…The critical thickness of HgCdTe films on CdZnTe substrates shows that a very tight control of the substrate composition is needed to produce dislocation-free…”
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6
Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality
Published in Journal of electronic materials (01-08-1996)“…We have conducted annealing experiments on CdZnTe wafers to restore stoichiometry, eliminate or reduce second-phase (Cd or Te) inclusions, and investigate…”
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7
High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice
Published in Applied physics letters (09-07-2012)“…We report on an interband cascade mid-wave infrared (MWIR) detector based on type-II InAs/GaSb/AlSb strained layer superlattices (T2SL). The reported device…”
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8
HgCdTe/CdZnTe P-I-N high-energy photon detectors
Published in Journal of electronic materials (01-08-1996)“…Classical solid-state detection of x-ray and gamma-ray radiation consists of a high voltage applied between two metallic contacts sandwiching a high…”
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9
Very high resolution detection of gamma radiation at room-temperature using p-i-n detectors of CdZnTe and HgCdTe
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01-08-1994)“…High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The…”
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Journal Article Conference Proceeding -
10
Effect of dislocations on the electrical and optical properties of long‐wavelength infrared HgCdTe photovoltaic detectors
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-07-1992)“…The quantitative effects of dislocations on the electrical and optical properties of long‐wavelength infrared (LWIR) HgCdTe photovoltaic detectors was…”
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Conference Proceeding Journal Article -
11
Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices
Published in IEEE journal of quantum electronics (01-02-2013)“…We present the design, growth, fabrication, and characterization of unipolar barrier photodiodes, pBiBn, based on type-II InAs/GaSb superlattice for midwave…”
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12
Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe
Published in Journal of electronic materials (01-08-2011)“…The InAs/GaSb family of type II superlattices (T2SL) is the only known infrared (IR) detector material having a theoretically predicted higher performance than…”
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Journal Article Conference Proceeding -
13
Low-energy electron-enhanced etching of HgCdTe
Published in Journal of electronic materials (01-07-2003)“…Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are…”
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Conference Proceeding Journal Article -
14
Strain relief in epitaxial HgCdTe by growth on a reticulated substrate
Published in Journal of electronic materials (01-06-2000)“…In nearly all cases when an epitaxial layer of HgCdTe is grown on a CdZnTe substrate, there will be a finite lattice mismatch due to the lack of precise…”
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15
Extraction of mobile impurities from CdZnTe
Published in Journal of electronic materials (01-06-2000)“…To develop a process for removing impurities from the CdZnTe substrate, we have carried out experiments using a molten salt, KCN (potassium cyanide), for…”
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16
Progress in CdZnTe substrate producibility and critical drivers of IRFPA yield originating with CdZnTe substrates
Published in Journal of electronic materials (01-06-1998)Get full text
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17
Use of ellipsometry to characterize the surface of HgCdTe
Published in Journal of electronic materials (01-08-1993)“…Author reviews applications of ellipsometry to HgCdTe and related materials. Methods and limitations of the analysis of nonabsorbing and absorbing single films…”
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Conference Proceeding Journal Article -
18
CdZnTe substrate producibility and its impact on IRFPA yield
Published in Journal of electronic materials (01-06-1999)“…The need for cost effective production of HgCdTe infrared detectors and focal plane assemblies has led to increased attention to the availability of high…”
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19
Surface characterization of Hg0.7Cd0.3Te native oxides
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-1985)“…Ultraviolet photoelectron spectroscopy (UPS), x‐ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (ELS) were used to characterize the…”
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20
Wafer Bonding of (211) Cd^sub 0.96^Zn^sub 0.04^Te on (001) Silicon
Published in Journal of electronic materials (01-06-2004)“…We have successfully bonded (211) cadmium zinc telluride (CZT) substrates onto (001) Si substrates for subsequent epitaxial-layer deposition of mercury cadmium…”
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