Search Results - "RATTUNDE, M"

High-brightness long-wavelength semiconductor disk lasers by Schulz, N., Hopkins, J.-M., Rattunde, M., Burns, D., Wagner, J.

“…A review on the recent developments in the field of long‐wavelength (λ >1.2μm) high‐brightness optically‐pumped semiconductor disk lasers (OPSDLs) is…”
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GaSb -based 2.X μ m quantum-well diode lasers with low beam divergence and high output power by Rattunde, M., Schmitz, J., Kaufel, G., Kelemen, M., Weber, J., Wagner, J.

“…We report on GaSb -based 2 . X μ m diode lasers with an improved waveguide design, leading to a reduced beam divergence in the fast axis of 44 ° full width at…”
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Comprehensive analysis of the internal losses in 2.0μm (AlGaIn)(AsSb) quantum-well diode lasers by Rattunde, M., Schmitz, J., Kiefer, R., Wagner, J.

“…We have fabricated and characterized high-power 2.0 μm-wavelength (AlGaIn)(AsSb) quantum-well diode lasers emitting a power of 1.7 W in continuous-wave…”
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High-Power High-Brightness Operation of a 2.25-$\mu$m (AlGaIn)(AsSb)-Based Barrier-Pumped Vertical-External-Cavity Surface-Emitting Laser by Rosener, B., Schulz, N., Rattunde, M., Manz, C., Kohler, K., Wagner, J.

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Infrared semiconductor lasers for sensing and diagnostics by Wagner, J., Mann, Ch, Rattunde, M., Weimann, G.

“…There is an increasing demand for spectrally agile compact solid-state lasers for spectroscopic sensing and diagnostics. This demand can be met by III--V…”
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Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3 μm by Schulz, N., Rattunde, M., Manz, C., Kohler, K., Wild, C., Wagner, J., Beyertt, S.-S., Brauch, U., Kubler, T., Giesen, A.

“…We report on the operation and beam profile analysis of an optically pumped GaSb-based vertical-external-cavity surface-emitting laser at 2.33 μm. To…”
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GaSb-Based Optically Pumped Semiconductor Disk Laser Using Multiple Gain Elements by Rosener, B., Rattunde, M., Moser, R., Manz, C., Kohler, K., Wagner, J.

“…We report on the realization of an optically pumped semiconductor disk laser (SDL) emitting at 2.25-mu m wavelength with a cavity containing two separately…”
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Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 μm diode lasers by Rattunde, M., Mermelstein, C., Schmitz, J., Kiefer, R., Pletschen, W., Walther, M., Wagner, J.

“…Strained triple-quantum-well, large-optical-cavity GaInSb/AlGaAsSb/GaSb diode lasers emitting at 1.98 μm at 300 K are investigated with regard to their…”
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Effect of the Cavity Resonance-Gain Offset on the Output Power Characteristics of GaSb-Based VECSELs by Schulz, N., Rattunde, M., Ritzenthaler, C., Rosener, B., Manz, C., Kohler, K., Wagner, J.

“…In spite of elaborate heat-sinking employing intracavity heat-spreaders, the maximum output power of current (AlGaIn)(AsSb)-based vertical-external-cavity…”
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Short-Pulse High-Power Operation of GaSb-Based Diode Lasers by Muller, M., Rattunde, M., Kaufel, G., Schmitz, J., Wagner, J.

“…We report on the short-pulse high-power operation of GaSb-based diode lasers emitting in the 1.95- to 2.2-mum wavelength range. Both epi-side-down mounted…”
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High-power 1.9-μm diode laser arrays with reduced far-field angle by Kelemen, M.T., Weber, J., Rattunde, M., Kaufel, G., Schmitz, J., Moritz, R., Mikulla, M., Wagner, J.

“…High-power 1.91-mum (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear arrays with improved waveguide design were fabricated and characterized…”
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GaSb-based tapered diode lasers at 1.93 [mu]m with 1.5-W nearly diffraction-limited power by C. Pfahler, C. Pfahler, G. Kaufel, G. Kaufel, M.T. Kelemen, M.T. Kelemen, M. Mikulla, M. Mikulla, M. Rattunde, M. Rattunde, J. Schmitz, J. Schmitz, J. Wagner, J. Wagner

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Widely Tunable Micro-Mechanical External-Cavity Diode Laser Emitting Around 2.1 \mu m by Geerlings, E., Rattunde, M., Schmitz, J., Kaufel, G., Wagner, J., Blasi, B., Kallweit, D., Zappe, H.

“…A widely tunable (Deltalambda/lambda = 7%) micro-mechanical external cavity GaSb-based diode laser (muECL) emitting around 2.1 mum is presented. A…”
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GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power by Pfahler, C., Kaufel, G., Kelemen, M.T., Mikulla, M., Rattunde, M., Schmitz, J., Wagner, J.

“…High-power high-brightness 1.93-μm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A…”
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Room-temperature external cavity GaSb-based diode laser around 2.13μm by Jacobs, U. H., Scholle, K., Heumann, E., Huber, G., Rattunde, M., Wagner, J.

“…We report on a grating-tuned room-temperature (AlGaIn)(AsSb) diode laser oscillating on a single external cavity mode in the wavelength region around 2.13μm. A…”
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Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3 [mu]m by N. Schulz, N. Schulz, M. Rattunde, M. Rattunde, C. Manz, C. Manz, K. Kohler, K. Kohler, C. Wild, C. Wild, J. Wagner, J. Wagner, S.-S. Beyertt, S.-S. Beyertt, U. Brauch, U. Brauch, T. Kubler, T. Kubler, A. Giesen, A. Giesen

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Growth and layer structure optimization of 2.26 μm (AlGaIn)(AsSb) diode lasers for room temperature operation by Simanowski, S, Mermelstein, C, Walther, M, Herres, N, Kiefer, R, Rattunde, M, Schmitz, J, Wagner, J, Weimann, G

“…The optimization of MBE growth conditions and layer structures for room temperature operation of 2.26 μm AlGaAsSb/GaInAsSb laser structures is investigated…”
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MBE of AlN on SiC and influence of structural substrate defects on epitaxial growth by Ebling, D.G, Rattunde, M, Steinke, L, Benz, K.W, Winnacker, A

“…Aluminum nitride layers were grown on Si-terminated SiC (0 0 0 1) at various substrate temperatures, growth rates, and V/III-ratios in a RF-plasma enhanced MBE…”
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Advances in MOEMS-Based External Cavity QCLs by Flores, Y. V., Rattunde, M., Ostendorf, R., Haertelt, M., Hugger, S., Butschek, L., Schilling, C., Merten, A., Schwarzenberg, M., Dreyhaupt, A., Grahmann, J.

“…The combination of broadband quantum cascade lasers (QCLs) with a micro-electro-mechanical system (MOEMS) scanner with integrated diffraction grating as a…”
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Recent Advances in 2-μm GaSb-Based Semiconductor Disk Laser-Power Scaling, Narrow-Linewidth and Short-Pulse Operation by Kaspar, S., Rattunde, M., Topper, T., Moser, R., Adler, S., Manz, C., Kohler, K., Wagner, J.

“…An overview of the recent progress in a 2-μm GaSb-based semiconductor disk laser will be presented in this paper. Significant advances could be recently…”
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