Search Results - "RAMONDA, M"

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  1. 1

    Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer by Rio Calvo, M., Rodriguez, J.-B., Cerutti, L., Ramonda, M., Patriarche, G., Tournié, E.

    Published in Journal of crystal growth (01-01-2020)
    “…•The growth of GaSb using a GaAs nucleation layer on 6° off-cut (001) Si is studied.•AFM and TEM reveal the formation of a quasi-2D GaAs nucleation…”
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    Journal Article
  2. 2

    On the effect of local sample slope during modulus measurements by contact-resonance atomic force microscopy by Heinze, K., Arnould, O., Delenne, J.-Y., Lullien-Pellerin, V., Ramonda, M., George, M.

    Published in Ultramicroscopy (01-11-2018)
    “…•Local surface slope has a significant effect on Contact Resonant AFM signals.•Measurements on real surfaces are thus subjected to strong misinterpretation.•A…”
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    Journal Article
  3. 3

    Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy by Gilbert, A., Graser, K., Ramonda, M., Trampert, A., Rodriguez, J.‐B., Tournié, E.

    Published in Advanced Physics Research (05-11-2024)
    “…The monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the performance…”
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    Journal Article
  4. 4

    Local vibrational and mechanical characterization of Ag conducting chalcogenide glasses by Piarristeguy, A., Le Parc, R., Ramonda, M., Escalier, R., Grillo, I., Cuello, G.J., Cristiglio, V., Pradel, A.

    Published in Journal of alloys and compounds (25-09-2018)
    “…Macroscopic and local studies of vibrational and mechanical properties of bulk Agx(Ge0.25Se0.75)100-x glasses were conducted using Raman (mapping)…”
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    Journal Article
  5. 5

    Characterization of Dielectric Nanocomposites with Electrostatic Force Microscopy by Arinero, R., Ramonda, M., Balme, Sébastien, Laurentie, J.-C., Bechelany, Mikhael, Castellon, J., Fedorenko, V., El Khoury, D., Fréchette, M.

    Published in Scanning (01-01-2017)
    “…Nanocomposites physical properties unexplainable by general mixture laws are usually supposed to be related to interphases, highly present at the nanoscale…”
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    Journal Article
  6. 6

    Effect of GaN template thickness and morphology on AlxGa1−xN (0<x<0.2) growth by MOVPE by Halidou, I., Touré, A., Fouzri, A., Ramonda, M., El Jani, B.

    Published in Applied surface science (01-09-2013)
    “…•AlxGa1−xN was grown on different GaN templates.•The template was deposited on in situ nano-masked sapphire.•Film quality depends on template thickness and…”
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    Journal Article
  7. 7

    Tribological properties of silicate materials on nano and microscale by Tordjeman, Ph, Morel, N., Ramonda, M.

    Published in Applied surface science (15-05-2009)
    “…We studied the friction properties of four model silicate materials at the nanoscale and microscale. From nanotribology, we characterized the tribological…”
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    Journal Article
  8. 8

    Aminated dendritic surfaces characterization: a rapid and versatile colorimetric assay for estimating the amine density and coating stability by Coussot, G, Faye, C, Ibrahim, A, Ramonda, M, Dobrijevic, M, Le Postollec, A, Granier, F, Vandenabeele-Trambouze, O

    Published in Analytical and bioanalytical chemistry (01-02-2011)
    “…The functionalization of surfaces with amino groups is used in many application areas such as in industrial biocatalytic processes for the development of…”
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    Journal Article
  9. 9

    High resolution electrical characterisation of Ag-conducting heterogeneous chalcogenide glasses by Piarristeguy, A.A., Ramonda, M., Frolet, N., Ribes, M., Pradel, A.

    Published in Solid state ionics (26-08-2010)
    “…Electric force microscopy (EFM) and conductive atomic force microcopy (C-AFM) are introduced to perform nanoscale electrical characterization of phase…”
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    Journal Article
  10. 10

    Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique by AL ASMAR, R, JUILLAGUET, S, RAMONDA, M, GIANI, A, COMBETTE, P, KHOURY, A, FOUCARAN, A

    Published in Journal of crystal growth (01-03-2005)
    “…High-quality undoped and Ga2O3-doped ZnO thin films have been co-evaporated by reactive electron beam evaporation in an oxygen environment. The effect of the…”
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    Journal Article
  11. 11

    Adhesion properties of wheat-based particles by Duri, A., George, M., Saad, M., Gastaldi, E., Ramonda, M., Cuq, B.

    Published in Journal of cereal science (01-07-2013)
    “…Specific AFM analytical methods were tested to the surface evaluation of wheat powders at micrometric scale in dry conditions. The objective was to evaluate…”
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    Journal Article
  12. 12

    Local electrical characterization of Ag conducting chalcogenide glasses using electric force microscopy by Piarristeguy, A.A., Ramonda, M., Pradel, A.

    Published in Journal of non-crystalline solids (01-10-2010)
    “…Local electrical properties of Ag x (Ge 0.25Se 0.75) 100 − x glasses with x = 5, 15, 20 and 25 at.% were investigated by electric force microscopy. The EFM…”
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    Journal Article Conference Proceeding
  13. 13

    Microstructure of Ag2S–As2S3 glasses by PIARRISTEGUY, A, RAMONDA, M, KUWATA, N, PRADEL, A, RIBES, M

    Published in Solid state ionics (30-11-2006)
    “…Field effect-scanning electron microscopy (FE-SEM) and electric force microscopy (EFM) measurements were carried out on bulk Ag2S-As2S3 glasses with silver…”
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    Journal Article
  14. 14

    Phase separation in Ag–Ge–Se glasses by Piarristeguy, A., Ramonda, M., Ureña, A., Pradel, A., Ribes, M.

    Published in Journal of non-crystalline solids (15-05-2007)
    “…Field emission-scanning electron microscopy (FE-SEM) and electric force microscopy (EFM) measurements were carried out on bulk Agx(Ge0.25Se0.75)100−x glasses…”
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    Journal Article Conference Proceeding
  15. 15

    New method for electrostatic force gradient microscopy observations and Kelvin measurements under vacuum by Portes, L., Ramonda, M., Arinero, R., Girard, P.

    Published in Ultramicroscopy (01-10-2007)
    “…It is shown that both dc and ac electrostatic force gradients can be observed under secondary vacuum by means of phase shifts under amplitude-controlled AFM…”
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    Journal Article
  16. 16

    Single swift heavy ion-induced trail of discontinuous nanostructures on SiO2 surface under grazing incidence by CARVALHO, A. M. J. F, TOUBOUL, A. D, MARINONI, M, GUASCH, C, RAMONDA, M, LEBIUS, H, SAIGNE, F, BONNET, J

    Published in Thin solid films (03-11-2008)
    “…Some recent results concerning swift heavy ion irradiation of thin SiO2 layers on Si under normal incidence irradiation leading to the formation of nanodots at…”
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    Conference Proceeding Journal Article
  17. 17

    Phase separation and ionic conductivity: an electric force microscopy investigation of silver chalcogenide glasses by Balan, V, Piarristeguy, A, Ramonda, M, Pradel, A, Ribes, M

    “…Electric Field Microscopy was used to characterise the electrical heterogeneousness existing in several chalcogenide glasses. While the ... glasses were shown…”
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    Journal Article
  18. 18

    Study of gel development during SON68 glass alteration using atomic force microscopy. Comparison with two simplified glasses by Donzel, N, Gin, S, Augereau, F, Ramonda, M

    Published in Journal of nuclear materials (01-04-2003)
    “…Literature mentions several physicochemical studies concerning the characterisation of the alteration films that are formed during the dissolution of the…”
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    Journal Article
  19. 19

    Discontinuous ion tracks on silicon oxide on silicon surfaces after grazing-angle heavy ion irradiation by Carvalho, A. M. J. F., Marinoni, M., Touboul, A. D., Guasch, C., Lebius, H., Ramonda, M., Bonnet, J., Saigne, F.

    Published in Applied physics letters (12-02-2007)
    “…Thin silicon oxide layers on silicon have been characterized by atomic force microscopy before and after swift heavy ion irradiation with 0.63 MeV ∕ u Pb ions…”
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    Journal Article
  20. 20

    Effect of SiN treatment on GaN epilayer quality by Benzarti, Z., Halidou, I., Boufaden, T., El Jani, B., Juillaguet, S., Ramonda, M.

    Published in Physica status solidi. A, Applied research (01-02-2004)
    “…High‐temperature GaN films were grown at 1120 °C and 1080 °C by atmospheric pressure metalorganic vapor phase epitaxy on silicon nitride (SiN)‐treated sapphire…”
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    Journal Article