Search Results - "RAMONDA, M"
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Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer
Published in Journal of crystal growth (01-01-2020)“…•The growth of GaSb using a GaAs nucleation layer on 6° off-cut (001) Si is studied.•AFM and TEM reveal the formation of a quasi-2D GaAs nucleation…”
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Journal Article -
2
On the effect of local sample slope during modulus measurements by contact-resonance atomic force microscopy
Published in Ultramicroscopy (01-11-2018)“…•Local surface slope has a significant effect on Contact Resonant AFM signals.•Measurements on real surfaces are thus subjected to strong misinterpretation.•A…”
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3
Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy
Published in Advanced Physics Research (05-11-2024)“…The monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the performance…”
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4
Local vibrational and mechanical characterization of Ag conducting chalcogenide glasses
Published in Journal of alloys and compounds (25-09-2018)“…Macroscopic and local studies of vibrational and mechanical properties of bulk Agx(Ge0.25Se0.75)100-x glasses were conducted using Raman (mapping)…”
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5
Characterization of Dielectric Nanocomposites with Electrostatic Force Microscopy
Published in Scanning (01-01-2017)“…Nanocomposites physical properties unexplainable by general mixture laws are usually supposed to be related to interphases, highly present at the nanoscale…”
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6
Effect of GaN template thickness and morphology on AlxGa1−xN (0<x<0.2) growth by MOVPE
Published in Applied surface science (01-09-2013)“…•AlxGa1−xN was grown on different GaN templates.•The template was deposited on in situ nano-masked sapphire.•Film quality depends on template thickness and…”
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7
Tribological properties of silicate materials on nano and microscale
Published in Applied surface science (15-05-2009)“…We studied the friction properties of four model silicate materials at the nanoscale and microscale. From nanotribology, we characterized the tribological…”
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8
Aminated dendritic surfaces characterization: a rapid and versatile colorimetric assay for estimating the amine density and coating stability
Published in Analytical and bioanalytical chemistry (01-02-2011)“…The functionalization of surfaces with amino groups is used in many application areas such as in industrial biocatalytic processes for the development of…”
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9
High resolution electrical characterisation of Ag-conducting heterogeneous chalcogenide glasses
Published in Solid state ionics (26-08-2010)“…Electric force microscopy (EFM) and conductive atomic force microcopy (C-AFM) are introduced to perform nanoscale electrical characterization of phase…”
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10
Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique
Published in Journal of crystal growth (01-03-2005)“…High-quality undoped and Ga2O3-doped ZnO thin films have been co-evaporated by reactive electron beam evaporation in an oxygen environment. The effect of the…”
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11
Adhesion properties of wheat-based particles
Published in Journal of cereal science (01-07-2013)“…Specific AFM analytical methods were tested to the surface evaluation of wheat powders at micrometric scale in dry conditions. The objective was to evaluate…”
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12
Local electrical characterization of Ag conducting chalcogenide glasses using electric force microscopy
Published in Journal of non-crystalline solids (01-10-2010)“…Local electrical properties of Ag x (Ge 0.25Se 0.75) 100 − x glasses with x = 5, 15, 20 and 25 at.% were investigated by electric force microscopy. The EFM…”
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Journal Article Conference Proceeding -
13
Microstructure of Ag2S–As2S3 glasses
Published in Solid state ionics (30-11-2006)“…Field effect-scanning electron microscopy (FE-SEM) and electric force microscopy (EFM) measurements were carried out on bulk Ag2S-As2S3 glasses with silver…”
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14
Phase separation in Ag–Ge–Se glasses
Published in Journal of non-crystalline solids (15-05-2007)“…Field emission-scanning electron microscopy (FE-SEM) and electric force microscopy (EFM) measurements were carried out on bulk Agx(Ge0.25Se0.75)100−x glasses…”
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Journal Article Conference Proceeding -
15
New method for electrostatic force gradient microscopy observations and Kelvin measurements under vacuum
Published in Ultramicroscopy (01-10-2007)“…It is shown that both dc and ac electrostatic force gradients can be observed under secondary vacuum by means of phase shifts under amplitude-controlled AFM…”
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16
Single swift heavy ion-induced trail of discontinuous nanostructures on SiO2 surface under grazing incidence
Published in Thin solid films (03-11-2008)“…Some recent results concerning swift heavy ion irradiation of thin SiO2 layers on Si under normal incidence irradiation leading to the formation of nanodots at…”
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Conference Proceeding Journal Article -
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Phase separation and ionic conductivity: an electric force microscopy investigation of silver chalcogenide glasses
Published in Journal of Optoelectronics and Advanced Materials (01-12-2006)“…Electric Field Microscopy was used to characterise the electrical heterogeneousness existing in several chalcogenide glasses. While the ... glasses were shown…”
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18
Study of gel development during SON68 glass alteration using atomic force microscopy. Comparison with two simplified glasses
Published in Journal of nuclear materials (01-04-2003)“…Literature mentions several physicochemical studies concerning the characterisation of the alteration films that are formed during the dissolution of the…”
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19
Discontinuous ion tracks on silicon oxide on silicon surfaces after grazing-angle heavy ion irradiation
Published in Applied physics letters (12-02-2007)“…Thin silicon oxide layers on silicon have been characterized by atomic force microscopy before and after swift heavy ion irradiation with 0.63 MeV ∕ u Pb ions…”
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Effect of SiN treatment on GaN epilayer quality
Published in Physica status solidi. A, Applied research (01-02-2004)“…High‐temperature GaN films were grown at 1120 °C and 1080 °C by atmospheric pressure metalorganic vapor phase epitaxy on silicon nitride (SiN)‐treated sapphire…”
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