Search Results - "RAMM, M. S"

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  1. 1

    Advances in modeling of wide-bandgap bulk crystal growth by Bogdanov, M. V., Demina, S. E., Karpov, S. Yu, Kulik, A. V., Ramm, M. S., Makarov, Yu. N.

    Published in Crystal research and technology (1979) (01-04-2003)
    “…We review key aspects of sublimation growth of wide‐bandgap semiconductors like SiC, AlN and GaN, and show how modeling can help to solve a number of practical…”
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    Journal Article
  2. 2

    Modeling of facet formation in SiC bulk crystal growth by Matukov, I.D., Kalinin, D.S., Bogdanov, M.V., Karpov, S.Yu, Ofengeim, D.Kh, Ramm, M.S., Barash, J.S., Mokhov, E.N., Roenkov, A.D., Vodakov, Yu.A., Ramm, M.G., Helava, H., Makarov, Yu.N.

    Published in Journal of crystal growth (15-05-2004)
    “…Control of the crystallization front profile is of great importance for various aspects of bulk SiC crystal growth by physical vapor transport. The structural…”
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  3. 3

    Modeling of SiC-matrix composite formation by isothermal chemical vapor infiltration by Kulik, V.I., Kulik, A.V., Ramm, M.S., Makarov, Yu.N.

    Published in Journal of crystal growth (15-05-2004)
    “…In this paper, a model of the isothermal chemical vapor infiltration (ICVI) is developed. The fibrous substrate (preform) is considered as a complex porous…”
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  4. 4

    Analysis of sublimation growth of bulk SiC crystals in tantalum container by Karpov, S.Yu, Kulik, A.V, Zhmakin, I.A, Makarov, Yu.N, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A

    Published in Journal of crystal growth (01-04-2000)
    “…Sublimation growth of SiC bulk crystals in tantalum container is studied both experimentally and theoretically. The model of heterogeneous processes occurred…”
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  5. 5

    Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth by Bogdanov, M.V., Galyukov, A.O., Karpov, S.Yu, Kulik, A.V., Kochuguev, S.K., Ofengeim, D.Kh, Tsiryulnikov, A.V., Ramm, M.S., Zhmakin, A.I., Makarov, Yu.N.

    Published in Journal of crystal growth (01-05-2001)
    “…We propose a new approach to optimization of SiC bulk crystal growth based on modeling. The idea is to employ a special software tool “virtual reactor” (VR)…”
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  6. 6

    Simulation of Sublimation Growth of SiC Single Crystals by Karpov, S. Yu, Makarov, Yu. N., Ramm, M. S.

    Published in physica status solidi (b) (01-07-1997)
    “…Modelling of sublimation growth of SiC is discussed with the goal to describe the mathematical models necessary to optimize the process and design of the…”
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  7. 7

    Heat transfer through source powder in sublimation growth of SiC crystal by Kitanin, E.L., Ramm, M.S., Ris, V.V., Schmidt, A.A.

    “…A problem of heat transport in a source powder is very important for sublimation crystal growth technique. This paper is devoted to the development and…”
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    Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas by Segal, A.S, Vorob'ev, A.N, Karpov, S.Yu, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A, Makarov, Yu.N

    Published in Journal of crystal growth (2000)
    “…Silicon carbide growth by sublimation sandwich method in the atmosphere of an inert gas is studied both experimentally and theoretically. An analytical…”
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  10. 10

    Optimization of sublimation growth of SiC bulk crystals using modeling by Ramm, M.S, Mokhov, E.N, Demina, S.E, Ramm, M.G, Roenkov, A.D, Vodakov, Yu.A, Segal, A.S, Vorob’ev, A.N, Karpov, S.Yu, Kulik, A.V, Makarov, Yu.N

    “…Analysis of factors determining growth rate and shape of the crystallization front during sublimation growth of bulk SiC crystals is presented. For this…”
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  11. 11

    Transport phenomena in sublimation growth of SiC bulk crystals by Segal, A.S, Vorob’ev, A.N, Karpov, S.Yu, Makarov, Yu.N, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A, Zhmakin, A.I

    “…Sublimation growth of SiC bulk crystals in the atmosphere of concentrated multi-component vapor is studied using a specially developed model of transport…”
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  12. 12

    Analysis of vaporization kinetics of group-III nitrides by Averyanova, M.V., Przhevalskii, I.N., Karpov, S.Yu, Makarov, Yu.N., Ramm, M.S., Talalaev, R.A.

    “…On the basis of experimental data on Knudsen and Langmuir evaporation of group-III nitrides, the role of surface kinetics is analyzed. Different behavior of…”
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  13. 13

    Analytical model of silicon carbide growth under free-molecular transport conditions by Karpov, S.Yu, Makarov, Yu.N., Ramm, M.S.

    Published in Journal of crystal growth (01-12-1996)
    “…An advanced approach is proposed for the theoretical analysis of SiC growth with techniques utilizing a free-molecular transport of the vapor species to the…”
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  14. 14

    Periosteal changes in mechanically stressed rat caudal vertebrae by ELLENDER, G, FEIK, S. A, RAMM-ANDERSON, S. M

    Published in Journal of anatomy (01-04-1989)
    “…When a caudal vertebra is stressed by looping the tail, remodelling results with increased formation of bone on the inner (concave) side of the loop and…”
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  15. 15

    Analysis of gallium nitride growth by gas-source molecular beam epitaxy by Karpov, S.Yu, Makarov, Yu.N, Ramm, M.S, Talalaev, R.A

    Published in Journal of crystal growth (01-05-1998)
    “…For analysis of GaN growth by molecular beam epitaxy using atomic gallium and molecular ammonia sources a quasi-thermodynamic model accounting for kinetics of…”
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  16. 16

    Periosteal response in translation-induced bone remodelling by FEIK, S. A, ELLENDER, G, CROWE, D. M, RAMM-ANDERSON, S. M

    Published in Journal of anatomy (01-08-1990)
    “…Translation of transplanted bones induces strain in the periosteum and subsequent bone remodelling. This study examines the periosteal response on the leading…”
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    Control of SiC growth and graphitization in sublimation sandwich system by Karpova, S.Yu, Makarov, Yu.N., Ramm, M.S., Talalaev, R.A.

    “…A theoretical approach is proposed which combines a mathematical model of SiC growth by the sublimation sandwich method with analysis of excess phases…”
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  19. 19

    Mathematical simulation of transport processes in modern sputter-deposition techniques of thin films by Fursenko, A.A., Galjukov, A.O., Makarov, Yu.N., Lutovinov, D.S., Ramm, M.S.

    Published in Journal of crystal growth (01-02-1995)
    “…The well-known mathematical models are elaborated to study transport processes of particles of various origin in an ion-plasma sputter-deposition system (SDS)…”
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