Search Results - "RAMM, M. S"
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Advances in modeling of wide-bandgap bulk crystal growth
Published in Crystal research and technology (1979) (01-04-2003)“…We review key aspects of sublimation growth of wide‐bandgap semiconductors like SiC, AlN and GaN, and show how modeling can help to solve a number of practical…”
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Modeling of facet formation in SiC bulk crystal growth
Published in Journal of crystal growth (15-05-2004)“…Control of the crystallization front profile is of great importance for various aspects of bulk SiC crystal growth by physical vapor transport. The structural…”
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Modeling of SiC-matrix composite formation by isothermal chemical vapor infiltration
Published in Journal of crystal growth (15-05-2004)“…In this paper, a model of the isothermal chemical vapor infiltration (ICVI) is developed. The fibrous substrate (preform) is considered as a complex porous…”
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Analysis of sublimation growth of bulk SiC crystals in tantalum container
Published in Journal of crystal growth (01-04-2000)“…Sublimation growth of SiC bulk crystals in tantalum container is studied both experimentally and theoretically. The model of heterogeneous processes occurred…”
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Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth
Published in Journal of crystal growth (01-05-2001)“…We propose a new approach to optimization of SiC bulk crystal growth based on modeling. The idea is to employ a special software tool “virtual reactor” (VR)…”
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Simulation of Sublimation Growth of SiC Single Crystals
Published in physica status solidi (b) (01-07-1997)“…Modelling of sublimation growth of SiC is discussed with the goal to describe the mathematical models necessary to optimize the process and design of the…”
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Heat transfer through source powder in sublimation growth of SiC crystal
Published in Materials science & engineering. B, Solid-state materials for advanced technology (04-09-1998)“…A problem of heat transport in a source powder is very important for sublimation crystal growth technique. This paper is devoted to the development and…”
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Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide
Published in Diamond and related materials (01-04-2000)Get full text
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Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas
Published in Journal of crystal growth (2000)“…Silicon carbide growth by sublimation sandwich method in the atmosphere of an inert gas is studied both experimentally and theoretically. An analytical…”
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Optimization of sublimation growth of SiC bulk crystals using modeling
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30-07-1999)“…Analysis of factors determining growth rate and shape of the crystallization front during sublimation growth of bulk SiC crystals is presented. For this…”
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Transport phenomena in sublimation growth of SiC bulk crystals
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30-07-1999)“…Sublimation growth of SiC bulk crystals in the atmosphere of concentrated multi-component vapor is studied using a specially developed model of transport…”
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Analysis of vaporization kinetics of group-III nitrides
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1997)“…On the basis of experimental data on Knudsen and Langmuir evaporation of group-III nitrides, the role of surface kinetics is analyzed. Different behavior of…”
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Analytical model of silicon carbide growth under free-molecular transport conditions
Published in Journal of crystal growth (01-12-1996)“…An advanced approach is proposed for the theoretical analysis of SiC growth with techniques utilizing a free-molecular transport of the vapor species to the…”
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Periosteal changes in mechanically stressed rat caudal vertebrae
Published in Journal of anatomy (01-04-1989)“…When a caudal vertebra is stressed by looping the tail, remodelling results with increased formation of bone on the inner (concave) side of the loop and…”
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Analysis of gallium nitride growth by gas-source molecular beam epitaxy
Published in Journal of crystal growth (01-05-1998)“…For analysis of GaN growth by molecular beam epitaxy using atomic gallium and molecular ammonia sources a quasi-thermodynamic model accounting for kinetics of…”
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Periosteal response in translation-induced bone remodelling
Published in Journal of anatomy (01-08-1990)“…Translation of transplanted bones induces strain in the periosteum and subsequent bone remodelling. This study examines the periosteal response on the leading…”
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Analysis of silicon carbide growth by sublimation sandwich method
Published in Journal of crystal growth (01-04-1997)Get full text
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Control of SiC growth and graphitization in sublimation sandwich system
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-04-1997)“…A theoretical approach is proposed which combines a mathematical model of SiC growth by the sublimation sandwich method with analysis of excess phases…”
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Mathematical simulation of transport processes in modern sputter-deposition techniques of thin films
Published in Journal of crystal growth (01-02-1995)“…The well-known mathematical models are elaborated to study transport processes of particles of various origin in an ion-plasma sputter-deposition system (SDS)…”
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Erratum to “Modeling of facet formation in SiC bulk crystal growth” [CRYS 266 (2004) 313]
Published in Journal of crystal growth (15-07-2004)Get full text
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