Search Results - "RAHIMZADEH KHOSHROO, L"

Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates by MAUDER, C, REUTERS, B, RAHIMZADEH KHOSHROO, L, RZHEUTSKII, M. V, LUTSENKO, E. V, YABLONSKII, G. P, WOITOK, J. F, HEUKEN, M, KALISCH, H, JANSEN, R. H

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On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE by Mauder, C., Booker, I.D., Fahle, D., Boukiour, H., Behmenburg, H., Rahimzadeh Khoshroo, L., Woitok, J.F., Vescan, A., Heuken, M., Kalisch, H., Jansen, R.H.

“…We highlight the challenges of GaN growth on (1 1 0)-oriented Si substrates with respect to the substrate-induced anisotropic strain state. A 5:4 lattice…”
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Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates by MAUDER, C, RAHIMZADEH KHOSHROO, L, KALISCH, H, JANSEN, R. H, BEHMENBURG, H, WEN, T. C, DIKME, Y, RZHEUTSKII, M. V, YABLONSKII, G. P, WOITOK, J, CHOU, M. M. C, HEUKEN, M

“…We deposited pure m-plane GaN (1 1_ 0 0) layers on LiAlO2 (1 0 0) substrates by MOVPE using Mg-doped InGaN buffer layers of various thickness. These sealing…”
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m -plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE by Behmenburg, H., Wen, T. C., Dikme, Y., Mauder, C., Khoshroo, L. Rahimzadeh, Chou, M. M. C., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J., Kalisch, H., Jansen, R. H., Heuken, M.

“…We present a study of growth and properties of m ‐plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A…”
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Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates by Mauder, C., Wang, K. R., Reuters, B., Behmenburg, H., Khoshroo, L. Rahimzadeh, Wan, Q., Trampert, A., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J. F., Heuken, M., Kalisch, H., Jansen, R. H.

“…We used metal organic vapour phase epitaxy (MOVPE) to deposit m‐plane GaN layers on LiAlO2 substrates and studied the influence of the V/III ratio during…”
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Optically pumped InGaN/GaN MQW lift-off lasers grown on silicon substrates by Lutsenko, E.V., Danilchyk, A.V., Tarasuk, N.P., Pavlovskii, V.N., Gurskii, A.L., Yablonskii, G.P., Rahimzadeh Khoshroo, L., Kalisch, H., Jansen, R.H., Dikme, Y., Schineller, B., Heuken, M.

“…Chemical etching and removal of the silicon substrate was used for the creation of optically pumped lift-off InGaN/GaN multiple quantum well (MQW) lasers from…”
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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO 2 substrates by Mauder, C., Reuters, B., Rahimzadeh Khoshroo, L., Rzheutskii, M.V., Lutsenko, E.V., Yablonskii, G.P., Woitok, J.F., Heuken, M., Kalisch, H., Jansen, R.H.

“…The anisotropic film properties of m-plane GaN deposited by metal organic vapour phase epitaxy (MOVPE) on LiAlO 2 substrates are investigated. To study the…”
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Growth and investigation of m-plane (In)GaN buffer layers on LiAlO 2 substrates by Mauder, C., Rahimzadeh Khoshroo, L., Behmenburg, H., Wen, T.C., Dikme, Y., Rzheutskii, M.V., Yablonskii, G.P., Woitok, J., Chou, M.M.C., Heuken, M., Kalisch, H., Jansen, R.H.

“…We deposited pure m-plane GaN (1 1¯ 0 0) layers on LiAlO 2 (1 0 0) substrates by MOVPE using Mg-doped InGaN buffer layers of various thickness. These sealing…”
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m ‐plane GaN/InGaN/AlInN on LiAlO 2 grown by MOVPE by Behmenburg, H., Wen, T. C., Dikme, Y., Mauder, C., Khoshroo, L. Rahimzadeh, Chou, M. M. C., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J., Kalisch, H., Jansen, R. H., Heuken, M.

“…We present a study of growth and properties of m ‐plane GaN/InGaN/AlInN structures on LiAlO 2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A…”
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M-plane GaN/InGaN/AlInN on LiAIO2 grown by MOVPE by BEHMENBURG, H, WEN, T. C, KALISCH, H, JANSEN, R. H, HEUKEN, M, DIKME, Y, MAUDER, C, RAHIMZADEH KHOSHROO, L, CHOU, M. M. C, RZHEUTSKII, M. V, LUTSENKO, E. V, YABLONSKII, G. P, WOITOK, J

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