Search Results - "RAGUOTIS, R"

Monte Carlo study of impact ionization in InSb induced by intense ultrashort terahertz pulses by Ašmontas, S., Raguotis, R., Bumelienė, S.

“…The electron impact ionization dynamic has been investigated by Monte Carlo method in n-type InSb under the action of single-cycle pulses with 1 ps duration…”
Get full text

Monte Carlo simulation of non-equilibrium phonon accumulation in cubic GaN crystal by Raguotis, R, Bumelien, S

“…The novel one-particle Monte Carlo procedure for the simulation of the longitudinal optical phonon distribution accumulation generated by electrons in a high…”
Get full text

Monte-Carlo study of electron noise in compensated InSb by Ašmontas, S, Raguotis, R, Bumelien, S

“…The results of Monte Carlo simulations of the electron noise in lightly doped and strongly compensated n-type InSb are presented. The strong electron…”
Get full text

Monte Carlo modeling of phonon-assisted carrier transport in cubic and hexagonal gallium nitride by BRAZIS, R, RAGUOTIS, R

“…Monte Carlo method is employed for the calculations of electron and hole transport characteristics of cubic and hexagonal GaN at T = 300 K in the fields of E <…”
Get full text

Phonon- and electron-related far-infrared absorption in CdTe and ZnTe crystals by Brazis, R., Nausewicz, D., Raguotis, R.

“…Constants characterising the efficiency of far‐infrared (FIR) photon coupling to phonon sum and difference combination processes are elucidated from existing…”
Get full text

Additional phonon modes and close satellite valleys crucialfor electron transport in hexagonal gallium nitride by Brazis, R., Raguotis, R.

“…Conventional models of electron transport in hexagonal GaN crystals predicting electron drift velocity peak value up to 3.2×107cm∕s at 140–220kV∕cm and a…”
Get full text

Thermal emf in a bipolar semiconductor with phonon drag of carriers by Konin, A., Raguotis, R.

Get full text

Noise and electron diffusion in doped n -type GaAs at heating electric fields by Katilius, R., Liberis, J., Matulionis, A., Raguotis, R., Sakalas, P., Nougier, J.-P., Vaissière, J.-C., Varani, L., Rota, L.

Get full text

A precise new method to evaluate Monte Carlo simulations of electron transport in semiconductors by Urban, M., Siegrist, M. R., Asadauskas, L., Raguotis, R., Brazis, R.

“…Monte Carlo simulations of the electron drift response to an ac-electric field are used to calculate the power dependent third harmonic generation efficiency…”
Get full text

LO-Phonon Band Filling by Means of Charge Carriers Accelerated in Electric Fields by Raguotis, R., Brazis, R.

Get full text

Development of a high-power THz radiation source for plasma diagnostics by Siegrist, M.R., Bindslev, H., Brazis, R., Guyomarc'h, D., Hogge, J.P., Moreau, Ph, Raguotis, R.

“…A high power radiation source in the THz range with long pulse and narrow line width is required for diagnosing fusion type plasmas by collective Thomson…”
Get full text

Transport and fluctuations in nonlinear-dissipative systems: role of interparticle collisions by R. Katilius, A. Matulionis, R. Raguotis, I. Matulionienė

“…The goal of the paper is to overview contemporary theoretical and experimental research of the microwave electric noise and fluctuations of hot carriers in…”
Get full text

Nonlinear transport and fluctuation characteristics of doped semiconductors by R. Katilius, J. Liberis, A. Matulionis, R. Raguotis, P. Sakalas

Get full text

Transient Response of Electrons and Phonons in ZnTe Crystals by Brazis, R., Raguotis, R.

Get full text

Interparticle collisions and hot-electron velocity fluctuations in GaAs at 80 K by Matulionis, A., Raguotis, R., Katilius, R.

Get full text

Drift velocity of electrons in quantum wells of selectively doped In{sub 0.5}Ga{sub 0.5}As/Al{sub x}In{sub 1-x}As and In{sub 0.2}Ga{sub 0.8}As/Al{sub x}Ga{sub 1-x}As heterostructures in high electric fields by Pozela, J., Pozela, K., Raguotis, R., Juciene, V.

“…The field dependence of drift velocity of electrons in quantum wells of selectively doped In{sub 0.5}Ga{sub 0.5}As/Al{sub x}In{sub 1-x}As and In{sub 0.2}Ga{sub…”
Get full text

Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields by Požela, J., Požela, K., Raguotis, R., Jucienė, V.

Get full text

Drift velocity of electrons in quantum wells of selectively doped [In.sub.0.5][Ga.sub.0.5]As/[Al.sub.x][In.sub.1-x]As and [In.sub.0.2][Ga.sub.0.8]As/[Al.sub.x][Ga.sub.1-x]As heterostructures in high electric fields by Pozela, J, Pozela, K, Raguotis, R, Juciene, V

“…The field dependence of drift velocity of electrons in quantum wells of selectively doped [In.sub.0.5][Ga.sub.0.5]As/[Al.sub.x][In.sub.1-x]As and…”
Get full text

Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/AlxIn1 − xAs and In0.2Ga0.8As/AlxGa1 − xAs heterostructures in high electric fields by Požela, J., Požela, K., Raguotis, R., Jucienė, V.

“…The field dependence of drift velocity of electrons in quantum wells of selectively doped In 0.5 Ga 0.5 As/Al x In 1 − x As and In 0.2 Ga 0.8 As/Al x Ga 1 − x…”
Get full text

Monte Carlo Treatment of Non-Equilibrium Processes in n-Type InSb Crystals by Ašmontas, S., Raguotis, R.

Get full text