Search Results - "Rösner, W."

Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results by Granzner, R., Polyakov, V.M., Schwierz, F., Kittler, M., Luyken, R.J., Rösner, W., Städele, M.

“…The dc behavior of single-gate and double-gate MOSFETs with gate lengths ranging from 5 to 100 nm is simulated using drift-diffusion, hydrodynamic, and Monte…”
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Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications by SPECHT, M, REISINGER, H, HOFMANN, F, SCHULZ, T, LANDGRAF, E, LUYKEN, R. J, RÖSNER, W, GRIEB, M, RISCH, L

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An extraordinarily inaccurate assay for free testosterone is still with us by Rosner, W

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Influence of crystal orientation and body doping on trigate transistor performance by Landgraf, E., Rösner, W., Städele, M., Dreeskornfeld, L., Hartwich, J., Hofmann, F., Kretz, J., Lutz, T., Luyken, R.J., Schulz, T., Specht, M., Risch, L.

“…This work characterizes long channel trigate transistors with respect to the systematic influence of crystal orientation and body doping on performance issues…”
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Novel dual bit tri-gate charge trapping memory devices by Specht, M., Kommling, R., Hofmann, F., Klandzievski, V., Dreeskornfeld, L., Weber, W., Kretz, J., Landgraf, E., Schulz, T., Hartwich, J., Rosner, W., Stadele, M., Luyken, R.J., Reisinger, H., Graham, A., Hartmann, E., Risch, L.

“…Dual bit operation of fabricated tri-gate nonvolatile memory devices with aggressively scaled oxide-nitride-oxide (ONO) dielectrics is presented for the first…”
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20 nm electron beam lithography and reactive ion etching for the fabrication of double gate FinFET devices by Kretz, J., Dreeskornfeld, L., Hartwich, J., Rösner, W.

“…New device concepts have been introduced to overcome the problems of planar microelectronic devices. The FinFET, which is a variant of the double gate…”
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Planar and vertical double gate concepts by Schulz, T, Rösner, W, Landgraf, E, Risch, L, Langmann, U

“…In this paper, we report a comparative study of different double gate architectures. The main focus is on the fabrication method of two different device…”
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NVM based on FinFET device structures by Hofmann, F., Specht, M., Dorda, U., Kömmling, R., Dreeskornfeld, L., Kretz, J., Städele, M., Rösner, W., Risch, L.

“…High density data flash memories are essentially used in mobile applications. Flash devices have a small form factor, high storage density and low power…”
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Errors in the measurement of plasma free testosterone by Rosner, W

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Measuring Estrogen Exposure and Metabolism: Workshop Recommendations on Clinical Issues by Demers, L. M, Hankinson, S. E, Haymond, S, Key, T, Rosner, W, Santen, R. J, Stanczyk, F. Z, Vesper, H. W, Ziegler, R. G

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Electron beam lithography for nanometer-scale planar double-gate transistors by Weber, W., Ilicali, G., Kretz, J., Dreeskornfeld, L., Rösner, W., Hansch, W., Risch, L.

“…Double-gate transistors are promising successors to conventional bulk MOSFETs, since their gate arrangement limits short channel effects yielding better device…”
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Realization and characterization of nano-scale FinFET devices by KRETZ, J, DREESKORNFELD, L, SCHRÖTER, R, LANDGRAF, E, HOFMANN, F, RÖSNER, W

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Realization and characterization of nano-scale FinFET devices by Kretz, J., Dreeskornfeld, L., Schröter, R., Landgraf, E., Hofmann, F., Rösner, W.

“…The double gate transistor is regarded as the ultimate device for future CMOS technologies because the excellent channel control suppresses leakage currents…”
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Nanoscale FinFETs for low power applications by Rösner, W., Landgraf, E., Kretz, J., Dreeskornfeld, L., Schäfer, H., Städele, M., Schulz, T., Hofmann, F., Luyken, R.J., Specht, M., Hartwich, J., Pamler, W., Risch, L.

“…N and p channel FinFETs with fin widths in the range of 15–30 nm and gate lengths down to 20 nm have been processed using e-beam-lithography and nano-etching…”
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Design considerations for fully depleted SOI transistors in the 25–50 nm gate length regime by Luyken, R.J., Schulz, T., Hartwich, J., Dreeskornfeld, L., Städele, M., Rösner, W.

“…Drift-diffusion simulations have been carried out to investigate the design space for n-channel fully depleted (FD) SOI transistors with undoped channels and…”
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Fabrication of ultra-thin-film SOI transistors using the recessed channel concept by Dreeskornfeld, L., Hartwich, J., Hofmann, F., Kretz, J., Landgraf, E., Luyken, R.J., Rösner, W., Schröter, R., Schulz, T., Specht, M., Städele, M., Weber, W., Risch, L.

“…In this article, ultra-thin-film SOI transistors fabricated by locally recessing the channel regions are presented. SOI MOSFETs with ultra-thin channels offer…”
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Impact of technology parameters on device performance of UTB-SOI CMOS by Schulz, T., Pacha, C., Luyken, R.J., Städele, M., Hartwich, J., Dreeskornfeld, L., Landgraf, E., Kretz, J., Rösner, W., Specht, M., Hofmann, F., Risch, L.

“…Ultra-thin-body silicon-on-insulator (UTB-SOI) is one of the most promising candidates for future CMOS technologies with minimum feature sizes below 50 nm. In…”
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Sub-40nm tri-gate charge trapping nonvolatile memory cells for high-density applications by Specht, M., Kommling, R., Dreeskornfeld, L., Weber, W., Hofmann, F., Alvarez, D., Kretz, J., Luyken, R.J., Rosner, W., Reisinger, H., Landgraf, E., Schulz, T., Hartwich, J., Stadele, M., Klandievski, V., Hartmann, E., Risch, L.

“…Fully-depleted tri-gate oxide-nitride-oxide (ONO) transistor memory cells with very short gate lengths in the range L/sub G/ = 30 - 80 nm have been fabricated…”
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Sex hormone-binding globulin is synthesized in target cells by Kahn, SM, Hryb, DJ, Nakhla, AM, Romas, NA, Rosner, W

“…Sex hormone-binding globulin (SHBG) is a multifunctional protein that acts in humans to regulate the response to steroids at several junctures. It was…”
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La plus ça change, la plus c'est la même chose--will bioassays make a comeback? by Rosner, W

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