Search Results - "Quang-Ho Luc"

Nanophotonic crystals on unpolished sapphire substrates for deep-UV light-emitting diodes by Tran, Tinh Binh, AlQatari, Feras, Luc, Quang-Ho

“…A new method has been established and employed to create a random nanophotonic crystal (NPhC) structure without photolithography on the unpolished side of a…”
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Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality by Liang, Yan-Kui, Wu, Jui-Sheng, Teng, Chih-Yu, Ko, Hua-Lun, Luc, Quang-Ho, Su, Chun-Jung, Chang, Edward-Yi, Lin, Chun-Hsiung

“…In this letter, 5 nm-thick HZO ultra-thin ferroelectric capacitors with excellent remanent polarization (<inline-formula> <tex-math…”
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Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes by Ko, Hua-Lun, Luc, Quang Ho, Huang, Ping, Chen, Si-Meng, Wu, Jing-Yuan, Tran, Nhan-Ai, Chang, Edward Yi

“…In this article, we investigate the electrical properties of In 0.53 Ga 0.47 As gate-all-around (GAA) MOSFETs with different nanowire shapes. InGaAs GAA…”
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Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs by Do, Huy-Binh, Luc, Quang-Ho, Pham, Phuong V., Phan-Gia, Anh-Vu, Nguyen, Thanh-Son, Le, Hoang-Minh, De Souza, Maria Merlyne

“…By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti,…”
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High Performance Inversion-Mode In0.53Ga0.47As FinFETs for Logic and RF Applications by Wu, Jing-Yuan, Huang, Ping, Luc, Quang-Ho, Ko, Hua-Lun, Chiang, Yung-Chun, Yu, Hsiang-Chan, Yu Chen, Mu, Chang, Edward. Yi

“…An inversion-mode In 0.53 Ga 0.47 As FinFET exhibiting a transition frequency (fT) of 271 GHz and a maximum oscillation frequency (f max ) of 78 GHz at V ds =…”
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Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition by Huynh, Sa Hoang, Ha, Minh Thien Huu, Do, Huy Binh, Luc, Quang Ho, Yu, Hung Wei, Chang, Edward Yi

“…Highly lattice-mismatch (over 8%) ternary InxGa1-xSb alloy directly grown on GaAs substrates was demonstrated by metalorganic chemical vapor deposition…”
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Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment by Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Shih-Chien Liu, Yen-Ku Lin, Sze, Simon M., Chang, Edward Yi

“…We report a notable improvement in performance, electron transport, and reliability of HfO 2 /In 0.53 Ga 0.47 As nMOSFETs using a plasma-enhanced atomic layer…”
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Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition by Huynh, Sa Hoang, Ha, Minh Thien Huu, Do, Huy Binh, Nguyen, Tuan Anh, Luc, Quang Ho, Chang, Edward Yi

“…The ternary InxGa1-xSb epilayers grown on GaAs substrates by metalorganic chemical vapor deposition using a GaSb buffer layer have been demonstrated…”
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InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment by Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Yen-Ku Lin, Chia-Hsun Wu, Sze, Simon M., Chang, Edward Yi

“…In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH 3 post remote-plasma (PRP) treatment onto InGaAs…”
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Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density by Trinh, Hai-Dang, Lin, Yueh-Chin, Nguyen, Minh-Thuy, Nguyen, Hong-Quan, Duong, Quoc-Van, Luc, Quang-Ho, Wang, Shin-Yuan, Nguyen, Manh-Nghia, Yi Chang, Edward

“…In this work, the band alignment, interface, and electrical characteristics of HfO2/InSb metal-oxide-semiconductor structure have been investigated. By using…”
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Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices by Do, Huy Binh, Luc, Quang Ho, Ha, Minh Thien Huu, Huynh, Sa Hoang, Nguyen, Tuan Anh, Lin, Yueh Chin, Chang, Edward Yi

“…The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the…”
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The influence of deposition temperature and annealing temperature on Ga-doped SnO2 films prepared by direct current magnetron sputtering by Dang, Huu Phuc, Luc, Quang Ho, Le, Van Hieu, Le, Tran

“…Transparent Ga-doped tin oxide (GTO) thin films were fabricated on quartz glass from a (SnO2 + Ga2O3) mixture ceramic target by direct current (DC) magnetron…”
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Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X = Ga and In) films: Testing the photoelectronic effect of X-doped SnO2/n-Si junctions by Le, Tran, Dang, Huu Phuc, Duong, Anh Quang, Luc, Quang Ho

“…[Display omitted] •The optimum X3+–Sn4+ substitution (X = Ga and In) favored the best p-type conductivity.•The lowest resistivity of 7.51% for the Ga-doped…”
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Eliminating the charge compensation effect in Ga-doped SnO2 films by N doping by Dang, Huu Phuc, Luc, Quang Ho, Nguyen, Thanh Tung, Le, Tran

“…A charge compensation effect between gallium (III) ions (Ga3+), which serve as acceptors, and oxygen vacancies has previously been observed in gallium…”
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Studying the influence of deposition temperature and nitrogen contents on the structural, optical, and electrical properties of N-doped SnO2 films prepared by direct current magnetron sputtering by Nguyen, Thanh Tung, Dang, Huu Phuc, Luc, Quang Ho, Le, Tran

“…This report focuses on studying and investigating in detail the structural, electrical, and optical properties of p-type N-doped SnO2 (NTO) versus the…”
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E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering by Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Kao, Min-Lu, Weng, You-Chen, Yang, Chih-Yi, Luc, Quang Ho, Lee, Ching-Ting, Ueda, Daisuke, Chang, Edward Yi

“…A high-performance E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMT with an innovative source-connected field plate (SCFP) structure is reported…”
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Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density by Quang Ho Luc, Huy Binh Do, Minh Thien Huu Ha, Hu, Chenming Calvin, Yueh Chin Lin, Chang, Edward Yi

“…The impact of in situ plasma-enhanced atomic layer deposition passivation on the electrical properties of HfO 2 /In 0.53 Ga 0.47 As metal-oxide-semiconductor…”
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High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications by Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu, Ting-En Hsieh, Lumbantoruan, Franky Juanda, Yu-Hsuan Ho, Jian-You Chen, Kun-Sheng Yang, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Quang Ho Luc, Yueh-Chin Lin, Chang, Edward Yi

“…A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for…”
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In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment by Luc, Quang Ho, Yang, Kun Sheng, Lin, Jia Wei, Chang, Chia Chi, Do, Huy Binh, Huynh, Sa Hoang, Ha, Minh Thien Huu, Nguyen, Tuan Anh, Lin, Yueh Chin, Hu, Chenming, Chang, Edward Yi

“…This letter presents a remote NH 3 /N 2 plasma treatment after gate oxide deposition for improving the electrical characteristics and the reliability of In…”
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High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications by Yen-Ku Lin, Noda, Shuichi, Chia-Ching Huang, Hsiao-Chieh Lo, Chia-Hsun Wu, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi

“…High-performance GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) using Al 2 O 3 gate dielectric deposited by atomic layer…”
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