Graphene-PbS Quantum Dot Heterostructure for Broadband Photodetector with Enhanced Sensitivity

Graphene-PbS Quantum Dot Heterostructure for Broadband Photodetector with Enhanced Sensitivity

Photodetectors converting light into electrical signals are crucial in various applications. The pursuit of high-performance photodetectors with high sensitivity and broad spectral range simultaneously has always been challenging in conventional semiconductor materials. Graphene, with its zero bandg...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Vol. 24; no. 17; p. 5508
Main Authors: Qing, Jincheng, Wang, Shicai, Gu, Shuyi, Lin, Lin, Xie, Qinpei, Li, Daming, Huang, Wen, Guo, Junxiong
Format: Journal Article
Language:English
Published: Switzerland MDPI AG 26-08-2024
Subjects:
broadband photodetector
Chemical vapor deposition
Graphene
heterostructure
high sensitivity
Ligands
Light
PbS quantum dots
Polymethyl methacrylate
Quantum dots
Spectrum analysis
China
Japan
high sensitivity
PbS quantum dots
broadband photodetector
heterostructure
graphene
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Summary:Photodetectors converting light into electrical signals are crucial in various applications. The pursuit of high-performance photodetectors with high sensitivity and broad spectral range simultaneously has always been challenging in conventional semiconductor materials. Graphene, with its zero bandgap and high electron mobility, is an attractive candidate, but its low light absorption coefficient restricts its practical application in light detection. Integrating graphene with light-absorbing materials like PbS quantum dots (QDs) can potentially enhance its photodetection capabilities. Here, this work presents a broadband photodetector with enhanced sensitivity based on a graphene-PbS QD heterostructure. The device leverages the high carrier mobility of graphene and the strong light absorption of PbS QDs, achieving a wide detection range from ultraviolet to near-infrared. Employing a simple spinning method, the heterostructure demonstrates ultrahigh responsivity up to the order of 10 A/W and a specific detectivity on the order of 10 Jones, showcasing significant potential for photoelectric applications.
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ISSN:1424-8220
1424-8220
DOI:10.3390/s24175508