Search Results - "Qin-Yi Tong"
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Low temperature wafer direct bonding
Published in Journal of microelectromechanical systems (01-03-1994)“…A pronounced increase of interface energy of room temperature bonded hydrophilic Si/Si, Si/SiO/sub 2/, and SiO/sub 2//SiO/sub 2/ wafers after storage in air at…”
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Transfer of semiconductor and oxide films by wafer bonding and layer cutting
Published in Journal of electronic materials (01-07-2000)“…To achieve a strong bond at low temperatures, two approaches may be adopted: 1) Bonding at RT by H bonding of OH, NH, or FH terminated surfaces followed by…”
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3
Effect of two types of surface sites on the characteristics of Si3N4-gate pH-ISFETs
Published in Sensors and actuators. B, Chemical (01-11-1996)Get full text
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4
A new interpretation of the orientation effect in GaAs metal semiconductor field effect transistors
Published in Japanese Journal of Applied Physics (1991)“…This paper presents a new explanation of the orientation effect of self-aligned WSix gate GaAs MESFET's by taking the different channel-substrate interfaces…”
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5
Analytical piezoelectric charge densities in GaAs MESFETs
Published in IEEE transactions on electron devices (01-03-1996)“…The orientation effect in GaAs MESFETs is related to the piezoelectric charge due to stress in overlayers. This brief describes an analytical method for the…”
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Characterization of interfaces of directly bonded silicon wafers : A comparative study of secondary ion mass spectroscopy multiple internal reflection spectroscopy, and transmission electron microscopy
Published in Japanese Journal of Applied Physics (1996)“…The structure and chemistry of interfaces of directly bonded Si/Si wafer pairs after annealing at 1100°C were investigated by secondary ion mass spectroscopy…”
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7
Improvement of bonded silicon-on-insulator using TCE-grown oxide as buried SiO2
Published in Japanese journal of applied physics (01-06-1993)Get full text
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Improvement of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO 2
Published in Japanese Journal of Applied Physics (01-06-1993)“…Silicon-on-insulator (SOI) was fabricated by wafer bonding using thermal SiO 2 and trichloroethylene (TCE)-grown SiO 2 as the buried oxides. Both the fixed…”
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9
Water-enhanced debonding of room-temperature bonded silicon wafers for surface protection applications
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE (01-11-1992)“…Reversible bonding of silicon wafers can be used to protect mirror polished silicon surface against organic contamination and particles. The present paper will…”
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10
A novel surface-site model for the oxide/aqueous electrolyte interface
Published in Japanese Journal of Applied Physics (1995)“…A novel surface-site model with clear physical configuration for the process of the H + -ion dissociation-association in the oxide/aqueous electrolyte (OAE)…”
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11
Biased-voltage controlled thinning for bonded silicon-on-insulator wafers
Published in Applied physics letters (29-05-1995)“…A novel method for the preparation of bonded and etch-back silicon-on-insulator is presented and demonstrated in which the surface of the to be thinned silicon…”
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12
Wafer Bonding and Layer Splitting for Microsystems
Published in Advanced materials (Weinheim) (01-12-1999)“…In advanced microsystems various types of devices (metal‐oxide semiconductor field‐effect transistors, bipolar transistors, sensors, actuators,…”
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13
Elimination of kink effect in fully depleted complementary buried-channel SOL MOSFET (FD CBCMOS) based on silicon direct bonding technology
Published in IEEE electron device letters (01-03-1991)“…For the fully depleted complementary buried-channel MOSFET (FD CBCMOS) discussed, although its operational principle is similar, its structure is different…”
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14
Characterization of buried interfaces by multiple internal reflection spectroscopy (MIRS)
Published in Mikrochimica acta (1966) (01-01-1997)Get full text
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15
Elimination of kink effect in fully depleted complementary buried-channel SOI MOSFET (FD CBCMOS) based on silicon direct bonding technology
Published in IEEE electron device letters (1991)“…A fully depleted complementary buried-channel MOSFET (FD CBCMOS) has been designed and fabricated using SOI material with normal thickness prepared by silicon…”
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16
Effects of Lactobacillus plantarum on gut barrier function in experimental obstructive jaundice
Published in World journal of gastroenterology : WJG (14-08-2012)“…AIM:To investigate the mechanisms of Lactobacillus plantarum(L.plantarum)action on gut barrier in preoperative and postoperative experimental obstructive…”
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17
Effect of two types of surface sites on the characteristics of Si 3N 4-gate pH-ISFETs
Published in Sensors and actuators. B, Chemical (1996)“…Based on the site-binding model, the effects of two types of surfaces sites (namely, silanol sites and amine sites) and their ratio on the characteristics of…”
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18
Device Design of a High Voltage BiCMOS IC
Published in ESSDERC '87: 17th European Solid State Device Research Conference (01-09-1987)“…A new high voltage (H. V) npn bipolar transistor for H. V BiCMOS IC's has been developed which is fully compatible with conventional low valtage n-well CMOS…”
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Influences of enteral nutrition combined with probiotics on gut microflora and barrier function of rats with abdominal infection
Published in World journal of gastroenterology : WJG (21-07-2006)“…AIM: To investigate the influences of enteral, parenteral nutrition and probiotics delivered by gut on intestinal microecology, epithelial tight junctions,…”
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20
Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's
Published in ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings (1996)“…Based on the site-binding model, the effects of two types of surface-sites (namely, silanol site and amine site) and their ratio on the characteristics of…”
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Conference Proceeding