Search Results - "Qin-Yi Tong"

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  1. 1

    Low temperature wafer direct bonding by Qin-Yi Tong, Cha, G., Gafiteanu, R., Gosele, U.

    Published in Journal of microelectromechanical systems (01-03-1994)
    “…A pronounced increase of interface energy of room temperature bonded hydrophilic Si/Si, Si/SiO/sub 2/, and SiO/sub 2//SiO/sub 2/ wafers after storage in air at…”
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    Journal Article
  2. 2

    Transfer of semiconductor and oxide films by wafer bonding and layer cutting by Tong, Qin-Yi, Huang, Li-Juan, Gösele, Ulich M.

    Published in Journal of electronic materials (01-07-2000)
    “…To achieve a strong bond at low temperatures, two approaches may be adopted: 1) Bonding at RT by H bonding of OH, NH, or FH terminated surfaces followed by…”
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    Journal Article
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    A new interpretation of the orientation effect in GaAs metal semiconductor field effect transistors by QING-AN HUANG, SHI-JI LU, QIN-YI TONG

    “…This paper presents a new explanation of the orientation effect of self-aligned WSix gate GaAs MESFET's by taking the different channel-substrate interfaces…”
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    Journal Article
  5. 5

    Analytical piezoelectric charge densities in GaAs MESFETs by Huang, Qing-An, Tong, Qin-Yi

    Published in IEEE transactions on electron devices (01-03-1996)
    “…The orientation effect in GaAs MESFETs is related to the piezoelectric charge due to stress in overlayers. This brief describes an analytical method for the…”
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    Journal Article
  6. 6

    Characterization of interfaces of directly bonded silicon wafers : A comparative study of secondary ion mass spectroscopy multiple internal reflection spectroscopy, and transmission electron microscopy by REICHE, M, HOPFE, S, GÖSELE, U, STRUTZBERG, H, TONG, Q.-Y

    “…The structure and chemistry of interfaces of directly bonded Si/Si wafer pairs after annealing at 1100°C were investigated by secondary ion mass spectroscopy…”
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    Journal Article
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    Improvement of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO 2 by Huang, Qing-An, Chen, Jun-Ning, Hui-Zhen Zhang, Hui-Zhen Zhang, Qin-Yi Tong, Qin-Yi Tong

    Published in Japanese Journal of Applied Physics (01-06-1993)
    “…Silicon-on-insulator (SOI) was fabricated by wafer bonding using thermal SiO 2 and trichloroethylene (TCE)-grown SiO 2 as the buried oxides. Both the fixed…”
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    Journal Article
  9. 9

    Water-enhanced debonding of room-temperature bonded silicon wafers for surface protection applications by QIN-YI TONG, GAFITEANU, R, GÖSELE, U

    “…Reversible bonding of silicon wafers can be used to protect mirror polished silicon surface against organic contamination and particles. The present paper will…”
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    Journal Article
  10. 10

    A novel surface-site model for the oxide/aqueous electrolyte interface by NIU MENG-NIAN, TENG ZHI-MENG, XIANG TAO, DING XIN-FANG, TONG QIN-YI

    “…A novel surface-site model with clear physical configuration for the process of the H + -ion dissociation-association in the oxide/aqueous electrolyte (OAE)…”
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    Journal Article
  11. 11

    Biased-voltage controlled thinning for bonded silicon-on-insulator wafers by Huang, Qing-An, Chen, Jun-Ning, Fu, Xing-Hua, Zhang, Hui-Zhen, Tong, Qin-Yi

    Published in Applied physics letters (29-05-1995)
    “…A novel method for the preparation of bonded and etch-back silicon-on-insulator is presented and demonstrated in which the surface of the to be thinned silicon…”
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    Journal Article
  12. 12

    Wafer Bonding and Layer Splitting for Microsystems by Tong, Q.-Y., Gösele, U. M.

    Published in Advanced materials (Weinheim) (01-12-1999)
    “…In advanced microsystems various types of devices (metal‐oxide semiconductor field‐effect transistors, bipolar transistors, sensors, actuators,…”
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    Journal Article
  13. 13

    Elimination of kink effect in fully depleted complementary buried-channel SOL MOSFET (FD CBCMOS) based on silicon direct bonding technology by Tong, Qin-Yi, Xu, Xiao-Li, Zhang, Hui-Zhen

    Published in IEEE electron device letters (01-03-1991)
    “…For the fully depleted complementary buried-channel MOSFET (FD CBCMOS) discussed, although its operational principle is similar, its structure is different…”
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    Journal Article
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    Elimination of kink effect in fully depleted complementary buried-channel SOI MOSFET (FD CBCMOS) based on silicon direct bonding technology by Tong, Q-Y, Xu, X-L, Zhang, H-Z

    Published in IEEE electron device letters (1991)
    “…A fully depleted complementary buried-channel MOSFET (FD CBCMOS) has been designed and fabricated using SOI material with normal thickness prepared by silicon…”
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    Journal Article
  16. 16

    Effects of Lactobacillus plantarum on gut barrier function in experimental obstructive jaundice by Zhou, Yu-Kun, Qin, Huan-Long, Zhang, Ming, Shen, Tong-Yi, Chen, Hong-Qi, Ma, Yan-Lei, Chu, Zhao-Xin, Zhang, Peng, Liu, Zhi-Hua

    Published in World journal of gastroenterology : WJG (14-08-2012)
    “…AIM:To investigate the mechanisms of Lactobacillus plantarum(L.plantarum)action on gut barrier in preoperative and postoperative experimental obstructive…”
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    Journal Article
  17. 17

    Effect of two types of surface sites on the characteristics of Si 3N 4-gate pH-ISFETs by Niu, Meng-Nian, Ding, Xin-Fang, Tong, Qin-Yi

    “…Based on the site-binding model, the effects of two types of surfaces sites (namely, silanol sites and amine sites) and their ratio on the characteristics of…”
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    Journal Article
  18. 18

    Device Design of a High Voltage BiCMOS IC by Qin-Yi, Tong, Wei, Wu

    “…A new high voltage (H. V) npn bipolar transistor for H. V BiCMOS IC's has been developed which is fully compatible with conventional low valtage n-well CMOS…”
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    Conference Proceeding
  19. 19

    Influences of enteral nutrition combined with probiotics on gut microflora and barrier function of rats with abdominal infection by Shen, Tong-Yi, Qin, Huan-Long, Gao, Zhi-Guang, Fan, Xiao-Bing, Hang, Xiao-Ming, Jiang, Yan-Qun

    Published in World journal of gastroenterology : WJG (21-07-2006)
    “…AIM: To investigate the influences of enteral, parenteral nutrition and probiotics delivered by gut on intestinal microecology, epithelial tight junctions,…”
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    Journal Article
  20. 20

    Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's by Meng-Nian Niu, Xin-Fang Ding, Qin-Yi Tong

    “…Based on the site-binding model, the effects of two types of surface-sites (namely, silanol site and amine site) and their ratio on the characteristics of…”
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    Conference Proceeding