Search Results - "Qilong Bao"

Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing by Zhang, Jinhan, Huang, Sen, Bao, Qilong, Wang, Xinhua, Wei, Ke, Zheng, Yingkui, Li, Yankui, Zhao, Chao, Liu, Xinyu, Zhou, Qi, Chen, Wanjun, Zhang, Bo

“…The physical mechanism of low-thermal-budget Au-free ohmic contacts to AlGaN/GaN heterostructures is systematically investigated with current-voltage,…”
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High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure by Sen Huang, Xinyu Liu, Xinhua Wang, Xuanwu Kang, Jinhan Zhang, Qilong Bao, Ke Wei, Yingkui Zheng, Chao Zhao, Hongwei Gao, Qian Sun, Zhaofu Zhang, Chen, Kevin J.

“…Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal- insulator-semiconductor high-electron-mobility…”
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Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess by Yijun Shi, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao, Shuiming Li, Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen, Qi Zhou, Bo Zhang, Xinyu Liu

“…Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x…”
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Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue® MOCVD platform by Bao, Qilong, Zhu, Tiankai, Zhou, Ning, Guo, Shiping, Luo, Jun, Zhao, Chao

“…Effect of hydrogen flow rate on AlN and AlGaN growth is investigated in AMEC Prismo D-Blue® MOCVD platform. It is found that AlN growth rate increases with the…”
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Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate by Bao, Qilong, Luo, Jun, Zhao, Chao

“…Trimethylaluminum (TMAl) pre-seeding time, an important factor in controlling the quality such as morphology and dislocation of AlN on Si(111) substrate, was…”
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Effect of alloying temperature on the capacitance-voltage and current-voltage characteristics of low-pressure chemical vapor deposition SiNx/n-GaN MIS structures by Ma, Xiaohua, Liu, Ying, Wang, Xinhua, Huang, Sen, Gao, Zhu, Bao, Qilong, Liu, Xinyu

“…The low‐pressure chemical vapor deposition (LPCVD)‐SiNx layer is deposited prior to the ohmic alloying as the passivation layer and gate dielectric layer in…”
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High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer by Mengyuan Hua, Zhaofu Zhang, Qingkai Qian, Jin Wei, Qilong Bao, Gaofei Tang, Chen, Kevin J.

“…In this work, we developed an effective technique to form a sharp and stable crystalline oxidation interlayer (COIL) between the reliable LPCVD (low pressure…”
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Rapid synthesis of zeolitic imidazolate framework-8 (ZIF-8) in aqueous solution via microwave irradiation by Bao, Qilong, Lou, Yongbing, Xing, Tiantian, Chen, Jinxi

“…Herein we report a new strategy to synthesize zeolitic imidazolate framework-8 (ZIF-8) at a relatively low molar ratio of ligand to metal ion in aqueous…”
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Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs by Mengyuan Hua, Jin Wei, Qilong Bao, Jiabei He, Zhaofu Zhang, Zheyang Zheng, Jiacheng Lei, Chen, Kevin J.

“…With substantially limited holes generation, the E-mode n-channel LPCVD-SiNx/GaN MIS-FET delivers small NBTI (with V ds = 0 V and a negative V gs = -30 V) even…”
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Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET by Hua, Mengyuan, Wei, Jin, Bao, Qilong, Zheng, Zheyang, Zhang, Zhaofu, He, Jiabei, Chen, Kevin Jing

“…Under reverse-bias stress (i.e., OFF-state stress with V GS <; V TH ) with high drain voltage, ultraviolet (UV) illumination and larger negative gate bias are…”
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Dependence of } Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET by Hua, Mengyuan, Wei, Jin, Bao, Qilong, Zhang, Zhaofu, Zheng, Zheyang, Chen, Kevin J.

“…In this letter, we investigated the threshold voltage <inline-formula> <tex-math notation="LaTeX">{V}_{\text {TH}} </tex-math></inline-formula> stability under…”
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Effect of alloying temperature on the capacitance-voltage and current-voltage characteristics of low-pressure chemical vapor deposition SiN sub(x)/n-GaN MIS structures by Ma, Xiaohua, Liu, Ying, Wang, Xinhua, Huang, Sen, Gao, Zhu, Bao, Qilong, Liu, Xinyu

“…The low-pressure chemical vapor deposition (LPCVD)-SiN sub(x) layer is deposited prior to the ohmic alloying as the passivation layer and gate dielectric layer…”
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Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiN x /n‐GaN MIS structures by Ma, Xiaohua, Liu, Ying, Wang, Xinhua, Huang, Sen, Gao, Zhu, Bao, Qilong, Liu, Xinyu

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Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN sub(x) Passivation and High-Temperature Gate Recess by Shi, Yijun, Huang, Sen, Bao, Qilong, Wang, Xinhua, Wei, Ke, Jiang, Haojie, Li, Junfeng, Zhao, Chao, Li, Shuiming, Zhou, Yu, Gao, Hongwei, Sun, Qian, Yang, Hui, Zhang, Jinhan, Chen, Wanjun, Zhou, Qi, Zhang, Bo, Liu, Xinyu

“…Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN…”
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Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN x Passivation and High-Temperature Gate Recess by Shi, Yijun, Huang, Sen, Bao, Qilong, Wang, Xinhua, Wei, Ke, Jiang, Haojie, Li, Junfeng, Zhao, Chao, Li, Shuiming, Zhou, Yu, Gao, Hongwei, Sun, Qian, Yang, Hui, Zhang, Jinhan, Chen, Wanjun, Zhou, Qi, Zhang, Bo, Liu, Xinyu

“…Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x…”
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Construction of a PV-driven plasma nitrogen fixation test platform and its application prospect in agricultural production by Qiyu, Zheng, Qilong, Bao, Liying, Li, Yilin, Miao, Weina, Zhu, Lidi, Wang, Peng, Huo

“…Nowadays, countries and regions around the world are doing a solid and effective job of carbon peaking and carbon neutralization, and environment friendly…”
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