Search Results - "Qian, Weiying"
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The Sensitivity of Grating-Based SPR Sensors with Wavelength Interrogation
Published in Sensors (Basel, Switzerland) (19-01-2019)“…In this paper, we derive the analytical expression for the sensitivity of grating-based surface plasmon resonance (SPR) sensors working in wavelength…”
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2
Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure
Published in Applied physics letters (04-12-2023)“…An Al0.4Ga0.6N-based metal–semiconductor–metal (MSM) ultraviolet (UV) photodetector (PD) based on intentionally asymmetrical polarized…”
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3
UV–visible dual-band photodetector based on an all-inorganic Mn-doped CsPbCl3/GaN type-II heterojunction
Published in Applied physics letters (04-12-2023)“…The all-inorganic perovskite CsPbCl3 has attracted significant attention for its excellent carrier mobility and high optical absorption coefficient,…”
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4
Comparison of functionalized AlGaN/GaN HEMT sensor for the detection of various heavy metal ions
Published in Applied physics. A, Materials science & processing (01-12-2022)“…We report and compare a sensitive heavy metal ion sensor for copper ion (Cu 2+ ), iron ion (Fe 3+ ), lead ion (Pb 2+ ) and cadmium ion (Cd 2+ ) detection. The…”
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5
Improved performance of AlGaN solar-blind avalanche photodiodes with dual multiplication layers
Published in Optical and quantum electronics (01-02-2023)“…A back-illuminated separate absorption and multiplication (SAM) solar-blind ultraviolet (UV) avalanche photodiode (APD) with a low-Al-content p-graded Al x Ga…”
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6
2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe3+ Detection
Published in IEEE journal of the Electron Devices Society (2023)“…A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe3+…”
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7
Optimization of plasmonic sensors based on sinusoidal and rectangular gratings
Published in Optics communications (01-12-2020)“…Surface plasmon resonance (SPR) sensors based on metal gratings have received much attention for designing compact and portable biosensors. In this paper, we…”
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8
Self-Powered GaN-Based MSM Ultraviolet Photodetector With Asymmetrical Interdigitated Structure
Published in IEEE transactions on electron devices (01-01-2024)“…In this work, we propose a self-powered GaN-based high-performance metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) with an asymmetrical…”
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9
Polarization independent and broadband achromatic metalens in ultraviolet spectrum
Published in Optics communications (15-10-2021)“…Ultraviolet lenses are core components of surveillance cameras, lithography machines and UV microscopes. Traditional refractive UV lenses are bulky, expensive…”
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10
Metal-semiconductor-metal solar-blind ultraviolet photodetector based on Al0.55Ga0.45N/Al0.4Ga0.6N/Al0.65Ga0.35N heterostructures
Published in Optics express (11-09-2023)“…We have designed a metal-semiconductor-metal (MSM) solar-blind ultraviolet (UV) photodetector (PD) by utilizing Al0.55Ga0.45N/Al0.4Ga0.6N/Al0.65Ga0.35N…”
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11
Metal-semiconductor-metal solar-blind ultraviolet photodetector based on Al 0.55 Ga 0.45 N/Al 0.4 Ga 0.6 N/Al 0.65 Ga 0.35 N heterostructures
Published in Optics express (11-09-2023)“…We have designed a metal–semiconductor–metal (MSM) solar-blind ultraviolet (UV) photodetector (PD) by utilizing Al 0.55 Ga 0.45 N/Al 0.4 Ga 0.6 N/Al 0.65 Ga…”
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12
Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors
Published in IEEE transactions on electron devices (01-05-2023)“…An ultraviolet (UV) photodetector (PD) applying the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface with AlGaN symmetrical interdigital…”
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13
Broadband Photodetector for Ultraviolet to Visible Wavelengths Based on the BA2PbI4/GaN Heterostructure
Published in ACS applied materials & interfaces (06-12-2023)“…Two-dimensional (2D) organic-inorganic hybrid perovskites (OIPs) have exhibited ideal prospects for perovskite photodetectors (PDs) owing to their remarkable…”
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14
Self-Powered Ga₂O₃ MSM Solar-Blind UV PDs With Asymmetric Electrodes for Optical Communications
Published in IEEE photonics technology letters (15-11-2024)“…This work demonstrated a self-powered Ga2O3-based metal-semiconductor-metal solar-blind ultraviolet photodetector using the following asymmetric electrodes at…”
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15
L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection
Published in IEEE transactions on electron devices (01-06-2022)“…We demonstrate an Al 0.18 Ga 0.82 N/GaN high electron mobility transistor (HEMT)-based copper ion (Cu 2+ ) sensor with L-cysteine functionalization. The…”
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L-Cysteine Functionalized Al 0.18 Ga 0.82 N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection
Published in IEEE transactions on electron devices (01-06-2022)Get full text
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17
Broadband Photodetector for Ultraviolet to Visible Wavelengths Based on the BA 2 PbI 4 /GaN Heterostructure
Published in ACS applied materials & interfaces (06-12-2023)Get full text
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18
Refractive index and temperature nanosensor with plasmonic waveguide system
Published in Optics communications (15-07-2016)“…A surface plasmon polariton sensor consisting of two metal–insulator–metal waveguides and a transverse rectangular resonator is proposed. Both refractive index…”
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19
Lead ion detection using glutathione-functionalized aluminum gallium nitride/gallium nitride high-electron-mobility transistors
Published in Current applied physics (01-06-2023)“…This work presents a new approach for lead ion detection (Pb2+) using an aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistor…”
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20
AlGaN‐based solar‐blind avalanche photodetectors with gradually doped charge layer
Published in International journal of numerical modelling (01-01-2023)“…To improve the performances of AlGaN solar‐blind ultraviolet (UV) avalanche photodetectors (APDs), we propose a separate absorption and multiplication (SAM)…”
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