Search Results - "Qi, Zhanbin"

Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors by Jia, Yuping, Shi, Zhiming, Hou, Wantong, Zang, Hang, Jiang, Ke, Chen, Yang, Zhang, Shanli, Qi, Zhanbin, Wu, Tong, Sun, Xiaojuan, Li, Dabing

“…GaN-based semiconductors are promising materials for solid-state optoelectronic applications. However, the strong internal electrostatic field (IEF) along the…”
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Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN by Hou, Wantong, Qi, Zhanbin, Zang, Hang, Yan, Yan, Shi, Zhiming

“…Two-dimensional (2D) semiconductors exhibit great potential to minimize the size and drastically reduce the energy consumption of optoelectronic devices due to…”
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Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Wang, Yong, Zhang, Zihui, Guo, Long, Chen, Yuxuan, Li, Yahui, Qi, Zhanbin, Ben, Jianwei, Sun, Xiaojuan, Li, Dabing

“…In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as the dielectric layers in p -Al Ga N/AlGaN/n -Al Ga N polarization…”
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Point Defects in Monolayer h‑AlN as Candidates for Single-Photon Emission by Shi, Zhiming, Qi, Zhanbin, Zang, Hang, Jiang, Ke, Chen, Yang, Jia, Yuping, Wu, Tong, Zhang, Shanli, Sun, Xiaojuan, Li, Dabing

“…A single-photon emission (SPE) system based on a solid state is one of the fundamental branches in quantum information and communication technologies. The…”
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Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles by Shi, ZhiMing, Sun, XiaoJuan, Jia, YuPing, Liu, XinKe, Zhang, ShanLi, Qi, ZhanBin, Li, DaBing

“…The high density of defects induced by large strains in largely mismatched heteroepitaxy systems, such as AlN and GaN, because of the large lattice and thermal…”
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