Search Results - "Qasrawi, Atef"
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1
SeO2 Microwires Designed as Low‐Temperature Abrupt Microelectronic Switches, Negative Resistance, and Negative Dielectric Constant Sources
Published in Physica status solidi. A, Applications and materials science (01-12-2022)“…Herein, the structural, morphological, compositional, and electrical properties of SeO2 microwires are studied and analyzed. Microwires of SeO2 with dimensions…”
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2
Al/MoO3/ZnPc/Al Broken Gap Tunneling Hybrid Devices Design for IR Laser Sensing and Microwave Filtering
Published in IEEE sensors journal (15-12-2020)“…Herein the design of broken gap heterojunction devices made of molybdenum trioxide and zinc phthalocyanine coated onto Al substrates are reported. The devices…”
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3
Enhancement of Nonlinear Optical and Dielectric Properties of Cu2O Films Sandwiched with Indium Slabs
Published in physica status solidi (b) (01-05-2020)“…In this work, the effects of the insertion of indium slabs of thickness 100 nm on the performance of stacked layers of Cu2O are reported. Cu2O/In/Cu2O thin…”
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4
Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology
Published in Physica status solidi. A, Applications and materials science (01-10-2024)“…Herein, films of barium antimonides (BaSb) are fabricated by a thermal deposition technique under a vacuum pressure of 10−5 mbar. BaSb films exhibit…”
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5
Band Offsets, Optical Conduction, and Microwave Band Filtering Characteristics of γ‐In2Se3/CuO Heterojunctions
Published in physica status solidi (b) (01-12-2020)“…Herein, the design and experimental characterization of γ‐In2Se3/CuO interfaces are considered. Thin films of γ‐In2Se3 are coated with thin layers of CuO at…”
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6
Dielectric Dispersion at the Mn/ZnPc Interfaces
Published in physica status solidi (b) (01-06-2020)“…Herein, the effects of manganese transparent (150 nm) substrates on the structural, nonlinear optical, and dielectric properties of zinc phthalocyanine are…”
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Enhancements of Light Absorbability, Optical Conductivity, and Terahertz Cutoff Frequency in Stacked Layers of Selenium via Ag Nanoslabs Sandwiching
Published in Physica status solidi. A, Applications and materials science (01-10-2019)“…Herein, the effects of insertion of Ag layer of thickness of 100 nm between two stacked layers of selenium are investigated by means of X‐ray diffraction,…”
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8
Design and Characterization of ZnSe/GeO2 Heterojunctions as Bandstop Filters and Negative Capacitance Devices
Published in Physica status solidi. A, Applications and materials science (01-04-2021)“…Herein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as…”
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9
Tungsten doped Bi1.5Zn0.92Nb1.5O6.92 ceramics designed as radio/microwave band pass/reject filters
Published in Microwave and optical technology letters (01-04-2021)“…Herein, radiowave/microwave bandpass/reject filters are fabricated from the tungsten doped Bi1.5Zn0.92Nb1.5‐6x/5WxO6.92 (W‐BZN) pyrochlore ceramics. The W‐BZN…”
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10
Effects of Ag2O Nanosheets on the Structural, Optical, and Dielectric Properties of GeO2 Stacked Layers
Published in physica status solidi (b) (01-05-2021)“…Herein, the effects of insertion of Ag2O nanosheets of thicknesses 25–75 nm between stacked layers of GeO2 on the structural, morphological, and optical…”
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11
Thickness effects on the dielectric dispersion and optical conductivity parameters of CuO thin films
Published in Microwave and optical technology letters (01-04-2020)“…In this article, the effect of film thickness on the structural, optical, dielectric, and optical conductivity parameters of CuO thin films are reported. CuO…”
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12
Pseudodielectric Dispersion in As2Se3 Thin Films
Published in physica status solidi (b) (01-03-2020)“…Herein, X‐ray diffraction, energy dispersive X‐ray spectroscopy, and spectral ellipsometry techniques are used to investigate the structural, pseudo‐optical,…”
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13
Impedance Spectroscopic Analysis of the InSe/ZnSe/InSe Interface
Published in IEEE transactions on electron devices (01-01-2017)“…In this paper, n-InSe/p-ZnSe/n-InSe (npn) thin-film transistors (TFTs) are deposited onto cubic (111)-oriented Ag, Au, and Al thin-film substrates. The…”
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14
Design and Characterization of n-Si/p-CdO Broken Gap Heterojunctions as High Frequency PMOSFETs and Microwave Resonators
Published in IEEE sensors journal (15-06-2021)“…Herein, <inline-formula> <tex-math notation="LaTeX">{p} </tex-math></inline-formula>- type CdO thin films coated onto <inline-formula> <tex-math…”
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15
Characterization of Au/As2Se3 Multifunctional Tunneling Devices
Published in Physica status solidi. A, Applications and materials science (01-03-2020)“…Herein, the physical design and characterization of the Au/As2Se3 Schottky barrier that is prepared under a vacuum pressure of 10−5 mbar are reported. The…”
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16
Nb2O5/SnO2 Heterojunctions Designed as Optical Absorbers and Microwave Band Filters
Published in Physica status solidi. A, Applications and materials science (01-07-2024)“…Herein, a 200 nm thick films of p−$\text{p} -$SnO2 are deposited onto p−$\text{p} -$Nb2O5 thin substrates (100 nm) to construct an isotype p−$\text{p}…”
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17
Design and Applications of Yb/Ga2Se3/C Schottky Barriers
Published in IEEE sensors journal (15-07-2017)“…In this paper, the Ga 2 Se 3 crystals are used to design a Yb/Ga 2 Se 3 /C Schottky barrier. The device structure is investigated by the X-ray diffraction…”
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18
Iron Selenide Nanowire Bundles for Microwave Communication Technology
Published in Physica status solidi. A, Applications and materials science (01-02-2024)“…Herein, stacked layers of FeSe2 deposited onto ytterbium substrates using the thermal evaporation technique under a vacuum pressure of 10−5 mbar are observed…”
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Yb/Se/WO3/Yb Thin Film Transistors as Rectifiers, N‐Channel Metal Oxide Semiconductor Capacitors, Laser Sensors, and Microwave Bandstop Filters
Published in Physica status solidi. A, Applications and materials science (01-09-2022)“…Herein, Yb/p–Se/p–WO3/Yb heterojunctions are employed as multifunctional devices. The devices which show back‐to‐back Schottky (BBS) diode characteristics are…”
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20
Energy Band Diagram and Current Transport Mechanism In p-MgO/n-Ga4Se3S
Published in IEEE transactions on electron devices (01-01-2015)“…A p-n heterojunction made of MgO and Ga 4 Se 3 S single crystal has been successfully produced. The current- voltage curve analysis has shown that the current…”
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