Search Results - "Py, M. A."

Barrier-Layer Scaling of InAlN/GaN HEMTs by Medjdoub, F., Alomari, M., Carlin, J.-F., Gonschorek, M., Feltin, E., Py, M.A., Grandjean, N., Kohn, E.

“…We discuss the characteristics of high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by…”
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High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures by Gonschorek, M., Carlin, J.-F., Feltin, E., Py, M. A., Grandjean, N.

“…Room temperature electron mobility of 1170cm2∕Vs is obtained in an undoped, lattice-matched, Al0.82In0.18N∕GaN field-effect transistor heterostructure, while…”
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Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN by Lugani, L., Py, M. A., Carlin, J.-F., Grandjean, N.

“…We study the deep levels in InAlN nearly lattice-matched to GaN by photocapacitance spectroscopy. This technique allows the study of very deep levels having…”
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Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures by Lugani, L., Carlin, J.-F., Py, M. A., Grandjean, N.

“…We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 °C and…”
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Characterization of deep levels in n-GaN by combined capacitance transient techniques by Py, M. A., Zellweger, Ch, Wagner, V., Carlin, J.-F., Buehlmann, H.-J., Ilegems, M.

“…Deep centers in undoped n‐GaN grown by Hydride Vapor Phase Epitaxy were characterized by Deep Level Transient Spectroscopy (DLTS), revealing four known levels…”
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Study of the kink effect in AlInAs/GaInAs/InP composite channel HFETs by Georgescu, B, Souifi, A, Guillot, G, Py, M A, Post, G

“…A detailed study is presented on AlInAs/InGaAs/InP composite channels. These devices combine the advantages of high mobility at low voltages and high electric…”
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Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy by ACHTNICH, T, BURRI, G, PY, M. A, ILEGEMS, M

“…The accumulation of oxygen at GaAs/AlGaAs interfaces grown by molecular beam epitaxy has been established by secondary ion mass spectrometry profiling of…”
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Feasibility and acceptability of rapid HIV test screening (DEPIVIH) by French family physicians by Gauthier, R., Livrozet, J.-M., Prevoteau du Clary, F., Taulera, O., Bouée, S., Aubert, J.-P., Py, A.M., Peter, J.M., Majerholc, C., Héber Suffrin, S., Compagnon, C., Wajsbrot, A.

“…In France, around 50,000 people were unaware of their HIV positivity at the end of 2008. The latest guidelines recommend routine screening of all adults…”
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Reduction of the effects of InGaAs alloy disorder by using InAs/GaAs superlattices as the conduction channel in modulation-doped heterostructures by MOREIRA, M. V. B, DE OLIVEIRA, A. G, PY, M. A

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Stress relaxation by surface rippling and dislocation generation in mismatched channels of InGaAs/InAlAs/InP high-electron-mobility transistors by Peiró, F., Cornet, A., Beck, M., Py, M. A.

“…We have investigated InGaAs strained channels of high-electron-mobility transistor heterostructures with In compositions of 70% and 80% and channel thicknesses…”
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New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs by Georgescu, B., Py, M.A., Souifi, A., Post, G., Guillot, G.

“…The kink effect in InAlAs/InGaAs/InP composite channel heterojunction field effect transistors (HFETs) was investigated as a function of temperature and…”
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Low-frequency noise properties of selectively dry etched InP HEMT's by Duran, H.C., Ren, L., Beck, M., Py, M.A., Begems, M., Bachtold, W.

“…The low-frequency noise of lattice-matched InAlAs/InGaAs/InP high electron mobility transistors (HEMT's) gate recess etched with a highly selective dry etching…”
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Photoluminescence and Hall characterization of pseudomorphic GaAs/InGaAs/AlGaAs heterostructures grown by molecular‐beam epitaxy by Baeta Moreira, M. V., Py, M. A., Ilegems, M.

“…Hall electrical properties measured by the van der Pauw method and low‐temperature photoluminescence (77 K PL) spectra of pseudomorphic GaAs/In y Ga1−y…”
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Extraction of FET parameters at low drain bias by taking into account the dependence of mobility on 2D electron gas concentration by Py, M.A., Haddab, Y., Shi, Z.M., Buhlmann, H.-J., Moreira, M.V. Baeta, Ilegems, M.

“…An original method for the extraction of FET parameters at low drain bias is presented. It is based on a simple linear charge-control model and on a power-law…”
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Investigation of DX centers in modulation-doped field-effect transistor-type Al0.3Ga0.7As/GaAs heterostructures using a Fourier-transform deep level transient spectroscopy system by HADDAB, Y, PY, M. A, BÜHLMANN, H.-J, ILEGEMS, M

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Correlation of electrical anisotropies of HEMT devices with defect distribution and InGaAs well roughness by Peiró, F., Ferrer, J.C., Cornet, A., Morante, J.R., Beck, M., Py, M.A.

“…In this study we used transmission electron microscopy (TEM) to assess the origin of the electrical behaviour of two dimensional electron gas (2DEG) in high…”
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Molecular‐beam epitaxial growth and characterization of modulation‐doped field‐effect transistor heterostructures using InAs/GaAs superlattice channels by Baeta Moreira, M. V., Py, M. A., Ilegems, M.

“…The molecular‐beam epitaxial growth conditions of (N+1)(InAs) m /N(GaAs) n short period superlattices (SPSs) on GaAs substrates have been optimized. Hall…”
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Higher mobility of charge carriers in InAs/GaAs superlattices through the elimination of InGaAs alloy disorders on GaAs by Baeta Moreira, M. V., de Oliveira, A. G., Py, M. A.

“…In this work, we present the Hall electrical properties for molecular beam epitaxy grown modulation‐doped field‐effect transistors structures using a…”
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Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1 − xAs quantum well and InAs–GaAs superlattice channels by Cury, L.A., Matinaga, F.M., Freire, S.L.S., Moreira, M.V.B., Beerens, J., Py, M.A.

“…Cyclotron resonance and photoluminescence measurements have been performed on two types of modulation-doped field-effect transistor heterostructures having…”
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High electron mobility lattice-matched Al In N ∕ Ga N field-effecttransistor heterostructures by Gonschorek, M., Carlin, J.-F., Feltin, E., Py, M. A., Grandjean, N.

“…Room temperature electron mobility of 1170 cm 2 ∕ V s is obtained in an undoped, lattice-matched, Al 0.82 In 0.18 N ∕ Ga N field-effect transistor…”
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