Search Results - "Puzyrev, Y. S."

Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors by Puzyrev, Y. S., Roy, T., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T.

“…Threshold-voltage shifts and increases in 1/ f noise are observed in proton-irradiated AlGaN/GaN high-electron-mobility transistors, indicating defect-mediated…”
Get full text

Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors by Puzyrev, Y. S., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T.

“…Recent experiments show that GaN/AlGaN high-electron-mobility transistors suffer from significant current collapse, which is caused by an increase in the…”
Get full text

Prediction of Giant Thermoelectric Efficiency in Crystals with Interlaced Nanostructure by Puzyrev, Y. S, Shen, X, Pantelides, S. T

“…We present a theoretical study of the thermoelectric efficiency of “interlaced crystals”, recently discovered in hexagonal-CuInS2 nanoparticles. Interlaced…”
Get full text

Variability of structural and electronic properties of bulk and monolayer Si2Te3 by Shen, X., Puzyrev, Y. S., Combs, C., Pantelides, S. T.

“…Silicon telluride has diverse properties for potential applications in Si-based devices ranging from fully integrated thermoelectrics to optoelectronics to…”
Get full text

Surface Reactions and Defect Formation in Irradiated Graphene Devices by Puzyrev, Y. S., Wang, B., Zhang, E. X., Zhang, C. X., Newaz, A. K. M., Bolotin, K. I., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T.

“…Quantum mechanical-based kinetic Monte-Carlo calculations (KMC) are used to investigate mechanisms of degradation of graphene devices subjected to 10-keV x-ray…”
Get full text

The Role of Atomic Displacements in Ion-Induced Dielectric Breakdown by Beck, M.J., Puzyrev, Y.S., Sergueev, N., Varga, K., Schrimpf, R.D., Fleetwood, D.M., Pantelides, S.T.

“…Irradiation of electronic devices with heavy ions causes a range of device degradation and failure modes, many of which are characterized and/or triggered by…”
Get full text

Memristive devices from ZnO nanowire bundles and meshes by Puzyrev, Y. S., Shen, X., Zhang, C. X., Hachtel, J., Ni, K., Choi, B. K., Zhang, E.-X., Ovchinnikov, O., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T.

“…We report two types of memristive devices made of ZnO nanowire assemblies and Ag electrodes: nanowire-bundle and nanowire-mesh memristors. Although constructed…”
Get full text

Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors by Puzyrev, Y. S., Tuttle, B. R., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T.

“…It has long been known that GaN high-electron-mobility transistors can degrade significantly under hot electron stress. More recently, an increase in the…”
Get full text

Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions by Roy, T., Puzyrev, Y. S., Tuttle, B. R., Fleetwood, D. M., Schrimpf, R. D., Brown, D. F., Mishra, U. K., Pantelides, S. T.

“…We have evaluated the long-term electrical reliability of GaN/AlGaN high-electron-mobility transistors grown under Ga-rich, N-rich, and NH 3 -rich conditions…”
Get full text

Prediction of Giant Thermoelectric Efficiency in Crystals with Interlaced Nanostructure by Puzyrev, Y. S., Shen, X., Pantelides, S. T.

“…We present a theoretical study of the thermoelectric efficiency of “interlaced crystals”, recently discovered in hexagonal-CuInS2 nanoparticles. Interlaced…”
Get full text

Temperature-dependence and microscopic origin of low frequency 1/ f noise in GaN/AlGaN high electron mobility transistors by Roy, T., Zhang, E. X., Puzyrev, Y. S., Shen, X., Fleetwood, D. M., Schrimpf, R. D., Koblmueller, G., Chu, R., Poblenz, C., Fichtenbaum, N., Suh, C. S., Mishra, U. K., Speck, J. S., Pantelides, S. T.

“…We have performed low frequency 1/ f noise measurements from 85K to 450K to investigate the energy distribution of defects in GaN/AlGaN high electron mobility…”
Get full text

Process Dependence of Proton-Induced Degradation in GaN HEMTs by Roy, T, En Xia Zhang, Puzyrev, Y S, Fleetwood, D M, Schrimpf, R D, Choi, B K, Hmelo, A B, Pantelides, S T

“…The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH 3 -rich conditions. The NH 3 -rich devices are more…”
Get full text

Automated software for the recovery of the short range order parameters from diffuse X-ray scattering data by Puzyrev, Y.S., Ice, G.E., Sparks, C.J., Robertson, L.

“…We have developed software to accelerate the analysis of the diffuse scattering data and to recover the short-range-order (SRO) and other parameters. The…”
Get full text

Reliability-limiting defects in AlGaN/GaN HEMTs by Roy, T, En Xia Zhang, Fleetwood, D M, Schrimpf, R D, Puzyrev, Y S, Pantelides, S T

“…Low-frequency noise measurements and density functional theory calculations are combined to show that N-anti-site and C impurity defects can lead to changes in…”
Get full text

Oxygen-related border traps in MOS and GaN devices by Fleetwood, D. M., Roy, T., Shen, X., Puzyrev, Y. S., Zhang, E. X., Schrimpf, R. D., Pantelides, S. T.

“…Oxygen-related border traps cause low-frequency excess (1/f) noise in MOS transistors with SiO 2 gate dielectrics and GaN/AlGaN HEMTs. In each case, the noise…”
Get full text