Search Results - "Pusep, Y A"

Fano resonance in heavily doped porous silicon by Pusep, Y. A., Rodrigues, A. D., Borrero-González, L. J., Acquaroli, L. N., Urteaga, R., Arce, R. D., Koropecki, R. R., Tirado, M., Comedi, D.

“…Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random…”
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Spectroscopic evidence of extended states in quantized Hall phase of weakly coupled GaAs/AlGaAs multi-layers by Pusep, Y.A., Guimarães, F.E.G., Arakaki, H., de Souza, C.A.

“…The influence of the interlayer coupling on formation of the quantized Hall conductor phase at the filling factor ν=2 was studied in the multi-layer…”
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Raman spectroscopy characterization of InAs self-assembled quantum dots by Galzerani, J.C., Pusep, Y.A.

“…Intensive Raman spectroscopy studies of the InAs self-assembled quantum dots grown on GaAs in different conditions were performed. Undoped multi-layered…”
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Effects of Annealing on Electrical Coupling in a Multilayer InAs/GaAs Quantum Dots System by Chiquito, A J, Pusep, Y A, Mergulhao, S, Galzerani, J C, Moshegov, N T

“…We present a systematic investigation of the capacitance–voltage measurements and Raman scattering on a multilayer InAs/GaAs self-assembled quantum dots system…”
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Thermostabilization of Electrical Properties of InAs/GaAs Self-Assembled Quantum Dots Embedded in GaAs/AlAs Superlattices by Chiquito, A J, Pusep, Y A, Mergulhao, S, Galzerani, J C, Moshegov, N T, Miller, D L

“…The electrical characteristics of the self-assembled quantum dots embbeded in GaAs wells of the GaAs/AlAs superlattices were studied by capacitance…”
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Raman spectroscopy characterization of InAs self-assembled quantum dots by GALZERANI, J. C, PUSEP, Y. A

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Atomic-scale characterization of interfaces in the GaAs/AlGaAs superlattices by Pusep, Yu.A., da Silva, S.W., Galzerani, J.C., Lubyshev, D.I., Basmaji, P., Milekhin, A.G., Preobrazhenskii, V.V., Semyagin, B.R., Marahovka, I.I.

“…We present a new interpretation of the Raman spectra of GaAs/AlAs ultrathin-layer superlattices based on the microscopic analysis of the optical vibrational…”
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Managing disorder in random GaAs/AlGaAs superlattices by Pusep, Yu.A.

“…The artificial random Gaussian-type potential built in the GaAs/AlGaAs superlattices grown by molecular beam epitaxy was explored by various methods. The…”
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Coherence of elementary excitations in a disordered electron system by PUSEP, Yu. A, RIBEIRO, M. B, CARRASCO, V. E, ZANELATTO, G, GALZERANI, J. C

“…The localization properties of the single-particle and collective electron excitations were investigated in the intentionally disordered GaAs/AlGaAs…”
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Carrier confinement in an ultrathin barrier GaAs/AlAs superlattice probed by capacitance–voltage measurements by Chiquito, A.J, Pusep, Yu.A, Mergulhão, S, Galzerani, J.C

“…The capacitance–voltage characteristics of (GaAs) m /(AlAs) n superlattices and of a GaAs/AlGaAs multiple quantum well system were used as a tool to probe the…”
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Raman probing of the wave function of collective excitations in the presence of disorder by Pusep, Yu.A., Sokolov, S.S., Fortunato, W., Galzerani, J.C., Leite, J.R.

“…The spatial extents of the wave functions of the collective plasmon–LO phonon excitations were studied as a function of the doping concentration and the…”
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Plasmon-like oscillations of the electrons localized by the DX centers in doped AlxGa1−xAs by Pusep, Yu.A., Chiquito, A.J., Fortunato, W., Galzerani, J.C.

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Raman probe of classical magnetoresistance in doped GaAs/AlAs superlattices by Pusep, Yu.A, Liang, Jun-Jih, Geurts, J, Moshegov, N.N

“…The characteristical asymmetric shapes of the Raman lines caused by the collective plasmon–LO phonon excitations in heavily doped GaAs/AlAs superlattices were…”
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Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy by Zanelato, G., Pusep, Yu.A., Galzerani, J.C., Lubyshev, D.I., González-Borrero, P.P.

“…The Raman spectra of the optical confined phonons in the GaAs/AlAs ultra-thin layer superlattices grown with different growth conditions were used to determine…”
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Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy by Zanelato, G., Pusep, Yu. A., Galzerani, J. C., Lubyshev, D. I., González-Borrero, P. P.

“…A Raman scattering study of cation segregation in GaAs/AlAs ultrathin‐layer superlattices grown with different temperatures and As pressures is reported. The…”
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Investigation of the InAs/GaAs self-assembled quantum dots using the relationship between the capacitance and the density of states by Chiquito, A.J, Pusep, Yu.A, Mergulhão, S, Galzerani, J.C, Moshegov, N.T

“…A negative differential capacitance observed in the InAs/GaAs self-assembled quantum dots is shown to be an essential feature of the zero-dimensional electron…”
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Photoluminescence and Raman characterization of heavily doped Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide by Lubyshev, D, Micovic, M, Gratteau, N, Cai, W-Z, Miller, D.L, Ray, O, Pusep, Yu.A, Silva, M.T.O, Galzerani, J.C, Bacher, K

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Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/AlxGa1-xAs superlattices by PUSEP, Yu. A, GUIMARAES, F. E. G, RIBEIRO, M. B, ARAKAKI, H, DE SOUZA, C. A, MALZER, S, DÖHLER, G. H

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Localized optical vibrational modes in GaSb/AlSb superlattices by Milekhin, A. G., Pusep, Yu. A., Yanovskii, Yu. A., Preobrazhenskii, V. V., Semyagin, B. R., Lubyshev, D. I.

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Photoluminescence of Excitons in Differently Oriented Self-Assembled InAs Quantum Dots by Pusep, Yu.A., da silva, S. W., Galzerani, J. C., Lubyshev, D. I., Gonzalez-Borrero, P. P., Marega Jr, E., Petitprez, E., La Scala Jr, N., Basmaji, P.

“…The photoluminescence of electron excitations was measured in differently oriented InAs self‐assembled quantum dot systems. The spin–orbit‐split excitons were…”
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